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公开(公告)号：KR100995922B1
公开(公告)日：2010-11-22
申请号：KR1020080071249
申请日：2008-07-22
Applicant: 한국전기연구원
Abstract: 본 발명은 전원 인가시 공핍형 접합형 전계효과 트랜지스터를 과전류에 의한 파괴로부터 보호하기 위한 보호회로 및 이를 이용한 전원장치에 관한 것으로, 정류된 직류전압을 충전하는 두 개의 DC 링크 캐패시터; 상위 DC 링크 캐패시터의 양단에 일반적인 전원회로를 구성하고 하위 DC 링크 캐패시터의 양단에는 상시개통 특성의 접합형 전계효과 트랜지스터를 초기 전원투입시 발생하는 돌입전류로부터 보호하며 접합형 전계효과 트랜지스터를 턴오프시키기에 충분한 전압을 공급해주는 레귤레이터;를 포함하여 구성되는 것을 특징으로 하는 공핍형 접합형 전계효과 트랜지스터 보호회로 및 이 보호회로가 적용된 플라이백(flyback), 피드포워드(feedforward), 하프브리지(half-bridge), 풀브리지(full-bridge) 형의 전원장치를 기술적 요지로 한다. 이와 같은 본 발명에 의한 보호회로는 구성이 간단하여 값싼 비용으로서 접합형 전계효과 트랜지스터의 장점을 살릴 수 있는 전원장치를 구현할 수 있는 장점이 있다.
공핍형 접합형 전계효과 트랜지스터, 도출전류, 보호회로, 레귤레이터-
公开(公告)号：KR1020100063336A
公开(公告)日：2010-06-11
申请号：KR1020080121809
申请日：2008-12-03
Applicant: 한국전기연구원
IPC: H01L21/283
CPC classification number: H01L21/28518 , H01L21/28052 , H01L29/66575
Abstract: PURPOSE: A manufacturing method of the silicon carbide semiconductor device is provided to improve a movement characteristic of the device by reducing a specific contact resistance with maximizing a contact area of an electrode. CONSTITUTION: A spacer insulating film(21-1) is formed on the sidewall of a concavo-convex(11) with mixing a front side formation of the insulating film and an anisotropy etching process. An electrode is simultaneously formed on an upper and a lower part of the concavo-convex exposed a semiconductor material with a thermal process after forming a predetermined metal film(51) on the front. The metal film is selectively removed remaining on the spacer insulating film using a wet etching or a dry etching process. The silicon carbide semiconductor device is a junction field effect transistor. The silicon carbide semiconductor device is a metal-insulating layer field effect transistor.
Abstract translation: 目的：提供碳化硅半导体器件的制造方法，以通过以最大化电极的接触面积的方式降低特定接触电阻来改善器件的运动特性。 构成：在凹凸（11）的侧壁上形成间隔绝缘膜（21-1），混合绝缘膜的正面形成和各向异性蚀刻工艺。 在前面形成预定的金属膜（51）之后，在凹凸的上部和下部同时形成电极，在半导体材料的热处理中暴露出半导体材料。 使用湿式蚀刻或干法蚀刻工艺，将金属膜选择性地除去留在间隔绝缘膜上。 碳化硅半导体器件是结型场效应晶体管。 碳化硅半导体器件是金属绝缘层场效应晶体管。
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公开(公告)号：KR1020090042598A
公开(公告)日：2009-04-30
申请号：KR1020070108447
申请日：2007-10-26
Applicant: 한국전기연구원
IPC: H01L29/78 , H01L21/336
CPC classification number: H01L29/66068 , H01L29/1608 , H01L29/47
Abstract: A field effect transistor having a junction barrier schottky gate structure and a manufacturing method thereof are provided to improve a switching property by reducing a parasitic capacitance generated between a gate and a drain. A field effect transistor comprises a gate electrode(200), a high concentration P type junction barrier schottky, a high concentration N type SiC semiconductor(210), a source electrode(220), a high concentration P type semiconductor(240), a drift layer(260), a high concentration N type SiC substrate(270), and a drain electrode(280). The gate electrode is positioned on a top end of a trench(1) structure. The drain electrode is contacted in a bottom of the substrate. The high concentration P type junction barrier schottky reduces a leakage current under an electrode, and increases a breakdown voltage. The source electrode is contacted in the high concentration N type SiC semiconductor. The high concentration P type semiconductor is formed under the high concentration P type SiC semiconductor and the source electrode.
Abstract translation: 提供具有结屏势肖特基门结构的场效应晶体管及其制造方法，以通过减小栅极和漏极之间产生的寄生电容来提高开关特性。 场效应晶体管包括栅电极（200），高浓度P型结屏障肖特基，高浓度N型SiC半导体（210），源电极（220），高浓度P型半导体（240）， 漂移层（260），高浓度N型SiC衬底（270）和漏电极（280）。 栅电极位于沟槽（1）结构的顶端。 漏电极在基板的底部接触。 高浓度P型结屏障肖特基降低了电极下的泄漏电流，并且增加了击穿电压。 源电极在高浓度N型SiC半导体中接触。 在高浓度P型SiC半导体和源电极下形成高浓度P型半导体。
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公开(公告)号：KR100873604B1
公开(公告)日：2008-12-11
申请号：KR1020070057329
申请日：2007-06-12
Applicant: 한국전기연구원
IPC: H01L29/80
Abstract: The method of manufacturing the silicon carbide junction field effect transistor is provided to facilitate the junction field effect transistor in which on-resistance is low and the dielectric breakdown voltage is high. The method of manufacturing the silicon carbide junction field effect transistor comprises as follows. The first step is for forming the n+ source area(11) and mesa structure in order to make the recessed gate structure junction field effect transistor in the n-type silicon carbide substrate. The second step is for performing the thing ion-implanting(aluminum, the beryllium and boron) for forming the p-type gate(aluminum and beryllium) to the p-type dopant ion injection. The third step is for performing the dopant activation and diffusion, and the thermal process for removing the lattice damage. The fourth stage is for completing the transistor manufacture after the series of production process including the metallization process for the electrode metallization and passivation process. Aluminum and boron are ion-implanted in the second step at together.
Abstract translation: 提供了制造碳化硅结型场效应晶体管的方法，以便于导通电阻低并且介电击穿电压高的结场效应晶体管。 制造碳化硅结型场效应晶体管的方法如下。 第一步是形成n +源区（11）和台面结构，以便使n型碳化硅衬底中的凹陷栅结构结场效应晶体管。 第二步是进行离子注入（铝，铍和硼），以形成p型栅极（铝和铍）到p型掺杂剂离子注入。 第三步是进行掺杂剂活化和扩散，以及去除晶格损伤的热处理。 第四阶段是在包括用于电极金属化和钝化处理的金属化工艺的一系列生产工艺之后完成晶体管制造。 铝和硼在第二步骤中一起离子注入。
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公开(公告)号：KR100783765B1
公开(公告)日：2007-12-07
申请号：KR1020060088387
申请日：2006-09-13
Applicant: 한국전기연구원
IPC: H01L21/84 , H01L21/336
Abstract: A silicon carbide semiconductor gas sensor and a manufacturing method thereof are provided to measure a broad range of hydrogen concentration by using a silicon carbide MOSFET device for low hydrogen concentration and a sensing resistance type sensor device for high hydrogen concentration. A p type silicon carbide epitaxial layer(202) is formed on an n+ type silicon carbide substrate(201), and a p type impurity is implanted on the p type silicon carbide epitaxial layer at a high temperature to form a p+ type channel stopper(205) for electrically isolating a standard MOSFET device from a sensing MOSFET device. A source and drain(206) configuring the standard MOSFET and the sensing MOSFET is formed on the epitaxial layer. A protective layer(214) is formed on a standard MOSFET device region to prevent contact of hydrogen gas, and a metal resistance type heating layer(215) is formed on a lower portion of the substrate to change a temperature of the MOSFET device.
Abstract translation: 提供一种碳化硅半导体气体传感器及其制造方法，用于通过使用用于低氢浓度的碳化硅MOSFET器件和用于高氢浓度的感测电阻型传感器装置来测量宽范围的氢浓度。 在n +型碳化硅衬底（201）上形成p型碳化硅外延层（202），并在高温下将p型杂质注入p型碳化硅外延层上以形成p +型沟道阻挡层（205 ），用于将标准MOSFET器件与感测MOSFET器件电隔离。 构成标准MOSFET和感测MOSFET的源极和漏极（206）形成在外延层上。 在标准MOSFET器件区域上形成保护层（214）以防止氢气接触，并且在衬底的下部形成金属电阻型加热层（215）以改变MOSFET器件的温度。
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Patent Agency Ranking
公开(公告)号：KR100776631B1
公开(公告)日：2007-11-15
申请号：KR1020060128850
申请日：2006-12-15
Applicant: 한국전기연구원
IPC: H01L49/00
Abstract: A semiconductor type hydrogen gas sensor and a manufacturing method thereof are provided to improve a sensitivity for detecting a fault in an insulation oil at an early stage by using a palladium electrode instead of a platinum electrode and inserting an adhesion promoter metal between a substrate and a palladium electrode. A hydrogen gas sensor includes a substrate(101), a junction enhancement metal layer(102), a heater, a catalyst metal layer(103), and a reactive oxide film(104). Device structures are formed on the substrate. The junction enhancement metal layer is bonded with a catalyst metal on the substrate. The heater is formed along a front edge of the substrate. The catalyst metal layer dissociates a hydrogen molecule into hydrogen atoms on the junction enhancement metal layer. The reactive oxide film generates a change of a transition property according to an atomic concentration of hydrogen between the junction enhancement metal layer and the catalyst metal layer.
Abstract translation: 提供一种半导体型氢气传感器及其制造方法，以通过使用钯电极代替铂电极来提高在早期阶段检测绝缘油中的故障的灵敏度，并将粘合促进剂金属插入到基板和 钯电极。 氢气传感器包括基板（101），结强化金属层（102），加热器，催化剂金属层（103）和反应性氧化物膜（104）。 器件结构形成在衬底上。 连接增强金属层与基板上的催化剂金属结合。 加热器沿着基板的前边缘形成。 催化剂金属层将氢分子解离成连接增强金属层上的氢原子。 反应性氧化物膜根据连接增强金属层和催化剂金属层之间的氢原子浓度产生过渡特性的变化。
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公开(公告)号：KR102198207B1
公开(公告)日：2021-01-04
申请号：KR1020150083099
申请日：2015-06-12
Applicant: 한국전기연구원
Abstract: 본발명은, A-B-A-C-A 원소가 5개층으로적층되는단위셀과, 상기단위셀말단의 A 원소와다른단위셀말단의 A 원소는상호간에반데르발스(van der waals) 결합에의해반복적층되는구조를가진 Te 계열전소재에있어서, 상기반복적층되는 A 원소와인접한 A 원소사이에도핑재인침입형 D 원소가침입위치되어상기단위셀의적층결함이발생하며, 상기단위셀과는다른복합결정구조가형성됨과동시에쌍정(twin) 및메탈레이어(metal layer)가형성됨을기술적요지로한다. (여기서 A는 Te 또는 Se 중하나이고, B는 Bi 또는 Sb중하나이고, C는 Bi 또는 Sb중하나이다.) 이에의해단위셀과단위셀사이에침입형도핑재를첨가하여단위셀의적층결함을발생시키고, 이를통해쌍정(twin) 및메탈레이어(metal layer)가형성되는효과를얻을수 있다.
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公开(公告)号：KR1020160077628A
公开(公告)日：2016-07-04
申请号：KR1020140187764
申请日：2014-12-24
Applicant: 한국전기연구원
Abstract: 본발명은, 균일한열전특성을갖는열전소재제조방법에있어서, 열전소재분말을준비하는단계와; 상기열전소재분말을몰드에충진하는단계와; 몰드에충진된상기열전소재분말을 1차가압소결(Press sintering)하여 1차소재를형성하는단계와; 1차가압소결된상기 1차소재를높이 1에대해직경이 5 내지 10의비율의열전소재를형성하도록 2차가압소결하여 2차소재를형성하는단계를포함하는것을기술적요지로한다. 이에의해복수의소결공정을통해얻을수 있는열전소재가특정직경및 높이비율에서열전소재의부위에따라균일한열전특성을가져이를통해열전소재의제조에따른시간및 비용을감소시킬수 있는효과를얻을수 있다.
Abstract translation: 本发明涉及一种具有均匀热电性能的热电材料的制造方法，包括以下步骤：制备热电材料粉末; 将热电材料粉末填充在模具中; 通过主要压制填充在模具中的热电材料粉末来形成初级材料; 并通过二次压制烧结主要的压制烧结的初级材料形成二次材料，从而可以形成直径在相对于高度1的5至10范围内的热电材料。 因此，可以通过多次烧结工艺获得的热电材料具有相对于热电材料部分的直径和高度的特定比例的均匀的热电性能，从而降低了制造热电材料的成本和时间。
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公开(公告)号：KR1020160077624A
公开(公告)日：2016-07-04
申请号：KR1020140187758
申请日：2014-12-24
Applicant: 한국전기연구원
CPC classification number: Y02T10/166 , H02N11/00 , F02G5/02 , H02N11/002
Abstract: 본발명은폐열을이용한열전발전장치에관한것으로, 더욱상세하게는열전모듈이외부와단절된상태에서열전모듈의저온부가공기와의직접적인접촉없이방열부재에의해간접적으로냉각됨에따라열전모듈의고온부와저온부간의온도차가급격하게발생하면서열전발전성능이향상되는폐열을이용한열전발전장치에관한것이다. 이러한본 발명은폐열이내부를따라통과하는열교환관; 상기열교환관의외면에설치되는복수개의열전달부재; 상기열전달부재의외면에각각고온부가접촉되게설치되어상기폐열이상기고온부로전달되는열전모듈; 상기열전모듈의저온부에각각설치되어공기와의접촉을통해상기열전모듈의저온부를냉각시키는방열부재; 및상기열교환관과는소정거리를두고상기방열부재를따라환설되어상기방열부재의사이사이에각각공기가내부에채워지고상기열전모듈을외부와격리하는단절공간을형성시켜상기열전모듈이외부의공기와의직접적인접촉을막아상기열전모듈의고온부와저온부간의온도차가확보되게하는단절관;을포함하여구성되는것을특징으로하는폐열을이용한열전발전장치를기술적요지로한다.
Abstract translation: 本发明涉及一种使用废热的热电发电机，更具体地说，涉及一种使用废热的热电发电机，其中热电模块的低温部分间接地被辐射部件冷却而不与空气直接接触， 热电模块从外部被阻挡，使得每个高温部分和每个低温部分之间的温差快速产生，从而提高热电发电的性能。 使用废热的热电发电机包括：热交换器管，多个传热构件，热电模块，辐射构件和阻塞管。 热交换管允许废热通过其中。 传热构件安装在热交换管的外表面上。 热电模块安装在热电元件的外表面上，以允许高温部件与热电元件接触并允许废热转移到高温部件。 辐射构件分别安装在热电模块的较低温度部分上，以冷却热电模块的较低温度部分。 阻挡管沿着辐射构件以与热交换管预定距离的方式圆周地安装，以允许空气填充辐射构件之间的每个内部空间，并形成将热电模块与外部分开的阻挡空间，使得热电模块为 防止与空气直接接触，从而确保高温部分和低温部分之间的温度差。
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公开(公告)号：KR1020160077615A
公开(公告)日：2016-07-04
申请号：KR1020140187739
申请日：2014-12-24
Applicant: 한국전기연구원
CPC classification number: F41H3/02 , E04H15/32 , G12B17/06 , Y10S428/919
Abstract: 본발명은열상차폐형위장막 및이를적용한야외간이시설물에관한것으로, 더욱상세하게는막의내면에열전모듈이설치되어열전모듈의흡열작용과발열작용을통하여열상차폐기능과냉난방기능을가지는열상차폐형위장막 및이를적용한야외간이시설물에관한것이다. 이러한본 발명은위장을위한막으로이루어진위장막에있어서, 상기막의내면에는복수개의열전모듈이설치되되상기열전모듈의일면이상기막의내면과밀착되게설치되어, 상기열전모듈에인가되는전원의극성방향에따라상기열전모듈의일면이밀착된상기막의내측으로는흡열반응또는발열반응이작용하고상기열전모듈이설치되지않은상기막의외측으로는상기내측과는반대로발열반응또는흡열반응이작용하면서열상차폐기능과냉난방기능을가지는것을특징으로하는열상차폐형위장막. 그리고본 발명은상기열상차폐형위장막이별도의지지수단에의해일정한형태의구조물을이루는것을특징으로하는야외용간이시설물도기술적요지로한다.
Abstract translation: 本发明涉及一种热图像阻挡型伪装薄膜和一种应用了这种装置的室外连接装置。 更具体地说，在薄膜的内表面上安装热电模块，使得热成像阻挡型伪装薄膜具有热图像阻挡功能，通过热电模块的吸热和发热反应来实现空调功能。 该伪装膜具有多个安装在内表面的热电模块，以使热电模块的一个表面粘附到内表面。 根据施加到热电模块的功率的极性方向，在热电模块的表面粘附到其上的膜中发生热发射和热吸收反应。 将热发射和热吸收反应施加到膜的外部，而不将热电模块安装在与膜的内部相反的方向上，从而使迷彩膜具有热图像阻挡功能和空调 功能。 热图像遮挡型迷彩膜通过使用单独的支撑装置形成预定形状的结构。
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