公开(公告)号：KR1020100066842A

公开(公告)日：2010-06-18

申请号：KR1020080125330

申请日：2008-12-10

Applicant: 한국전자통신연구원

Inventor： 박정우 ,  유종범 ,  김경옥

IPC: H01L31/00 ,  H01L29/868

CPC classification number: G02F1/025 ,  G02F2001/0156 ,  G02F2201/063 ,  G02F2201/12 ,  G02F2202/105 ,  G02F2202/32

Abstract: PURPOSE: An optical loss modulator and a method for manufacturing the same are provided to reduce the cross section of the optical loss modulator by changing the absorption rate of an intrinsic region. CONSTITUTION: An insulating layer(12) is formed on a substrate(11). A waveguide(16) with a P-I-N diode structure is formed on the insulating layer. The absorption rate of the intrinsic region(15) of the P-I-N diode is changed in a modulation operation of a light inputted to the waveguide. The P-I-N diode includes the intrinsic region, the P-type region(13) of the intrinsic region, and the N type region(14) of the intrinsic region. The waveguide enhances the absorption rate of the intrinsic region by slowing the progressing speed of the light.

Abstract translation: 目的：提供光损耗调制器及其制造方法，以通过改变本征区域的吸收率来减小光损耗调制器的横截面。 构成：在基板（11）上形成绝缘层（12）。 在绝缘层上形成具有P-I-N二极管结构的波导（16）。 在输入到波导的光的调制操作中，P-I-N二极管的本征区域（15）的吸收率发生变化。 P-I-N二极管包括本征区域，本征区域的P型区域（13）和本征区域的N型区域（14）。 波导通过减慢光的进行速度来增强本征区域的吸收率。