-
公开(公告)号：KR101352362B1
公开(公告)日：2014-01-15
申请号：KR1020100088107
申请日：2010-09-08
Applicant: 한국전자통신연구원
IPC: B82B3/00 , H01L35/02 , H01L27/146
Abstract: 열전 소자 및 그 형성방법, 이를 이용한 온도 감지 센서 및 열원 이미지 센서가 제공된다. 열전 소자는 기판 상의 서로 이격되어 배치된 제 1 나노 와이어 및 제 2 나노 와이어, 제 1 나노 와이어의 일단에 연결되는 제 1 실리콘 박막, 제 2 나노 와이어의 일단에 연결되는 제 2 실리콘 박막 및 제 1 나노 와이어의 타단 및 제 2 나노 와이어의 타단에 연결되는 제 3 실리콘 박막을 포함하되, 제 1 나노 와이어 및 제 2 나노 와이어는 기판의 상부면에 대하여 수평한 방향으로 연장된다.
-
公开(公告)号：KR1020130072694A
公开(公告)日：2013-07-02
申请号：KR1020110140232
申请日：2011-12-22
Applicant: 한국전자통신연구원
Abstract: PURPOSE: A thermoelectric element and a manufacturing method thereof are provided to maintain the constant temperature difference between a heat adsorption part and a heat radiation part, and to improve thermoelectric effect. CONSTITUTION: A heat adsorption part (230) is formed on a substrate. A leg (240) and a heat radiation part (250) are formed on the substrate. A thermal release material emits the heat transferred from the heat radiation part. One end of the leg is connected to the heat adsorption part. The other end of the leg is connected to the heat radiation part.
Abstract translation: 目的：提供一种热电元件及其制造方法，以保持热吸收部和散热部之间的恒温差，并提高热电效应。 构成：在基板上形成热吸附部（230）。 在基板上形成有支脚（240）和散热部（250）。 热释放材料发射从热辐射部分传递的热量。 腿的一端连接到热吸收部分。 腿的另一端连接到散热部分。
-
公开(公告)号：KR1020120071254A
公开(公告)日：2012-07-02
申请号：KR1020100132921
申请日：2010-12-22
Applicant: 한국전자통신연구원
IPC: H01L35/32
Abstract: PURPOSE: A thermoelectric device and a manufacturing method thereof are provided to improve a seebeck coefficient by partially forming a material having different work functions on each of an N-type leg and a P-type leg. CONSTITUTION: An insulation layer(120) prevents heat generated in a structure from being transmitted to a substrate(110). A high temperature portion(140) is commonly connected to one ends of a first nanowire(130b) and a second nanowire(130a). A low temperature portion(150) is connected to the other ends of the first nanowire and the second nanowire. An insulating layer(160) is formed through the first nanowire and the second nanowire. A first metal layer(170a) is formed on the top of the insulating layer at the first nanowire. A second metal layer(170b) is formed on the top of the insulating layer at the second nanowire.
Abstract translation: 目的：提供一种热电装置及其制造方法，以通过在N型腿和P型腿中的每一个上部分地形成具有不同功函数的材料来提高跷跷板系数。 构成：绝缘层（120）防止在结构中产生的热量被传送到衬底（110）。 高温部分（140）通常连接到第一纳米线（130b）和第二纳米线（130a）的一端。 低温部分（150）连接到第一纳米线和第二纳米线的另一端。 通过第一纳米线和第二纳米线形成绝缘层（160）。 第一金属层（170a）形成在第一纳米线的绝缘层的顶部。 第二金属层（170b）形成在绝缘层的第二纳米线的顶部。
-
Patent Agency Ranking
公开(公告)号：KR1020110091921A
公开(公告)日：2011-08-17
申请号：KR1020100011284
申请日：2010-02-08
Applicant: 한국전자통신연구원
IPC: H01L35/32
CPC classification number: H01L35/30
Abstract: PURPOSE: A thermoelectric array is provided to reduce manufacturing costs by integrating a thermoelectric device with a heat absorbing unit, a leg, and a heat discharge unit using a semiconductor process. CONSTITUTION: A plurality of thermoelectric devices(300) is electrically connected and has m x n structure. Each thermoelectric device includes a heat absorbing unit, an n type leg(331), a p type leg(333), a first heat discharge unit(350a), and a second heat discharge unit(350b). The leg includes a first conductive leg and a second conductive leg.
Abstract translation: 目的：提供一种热电阵列，以通过使用半导体工艺将热电装置与吸热单元，腿部和放热单元集成来降低制造成本。 构成：多个热电装置（300）电连接并具有m×n结构。 每个热电装置包括吸热单元，n型腿（331），p型腿（333），第一放热单元（350a）和第二放热单元（350b）。 腿包括第一导电腿和第二导电腿。
-
公开(公告)号：KR1020130061942A
公开(公告)日：2013-06-12
申请号：KR1020110128272
申请日：2011-12-02
Applicant: 한국전자통신연구원
IPC: H01L35/02
Abstract: PURPOSE: A thermoelectric device using a clad nanowire is provided to maintain high electric conductivity, to lower thermal conductivity, and to improve thermoelectric conversion efficiency. CONSTITUTION: A clad nanowire(11) connects a first contact part to a second contact part. The clad nanowire has a thermoelectric property and electric conductivity. A cladding layer(12) surrounds the nanowire. The cladding layer exposes both ends of the nanowire. The thermal conductivity of the cladding layer is lower than the thermal conductivity of the nanowire.
Abstract translation: 目的：提供一种使用包覆纳米线的热电装置，以保持高导电性，降低热导率，提高热电转换效率。 构成：包层纳米线（11）将第一接触部分连接到第二接触部分。 包覆纳米线具有热电性能和导电性。 包层（12）围绕纳米线。 包覆层露出纳米线的两端。 包层的热导率低于纳米线的热导率。
-
公开(公告)号：KR101232875B1
公开(公告)日：2013-02-12
申请号：KR1020090089114
申请日：2009-09-21
Applicant: 한국전자통신연구원
IPC: H01L35/28
Abstract: 열전 소자를 제공한다. 제 1 전극 및 제 2 전극이 제공되고, 상기 제 1 전극 상에 제 1 반도체 패턴 및 적어도 하나 이상의 제 1 장벽 패턴을 포함하는 제 1 레그가 제공되고, 상기 제 2 전극 상에 제 2 반도체 패턴 및 적어도 하나 이상의 제 2 장벽 패턴을 포함하는 제 2 레그가 제공되고, 상기 제 1 레그 및 상기 제 2 레그 상에 공통 전극이 제공된다. 상기 제 1 장벽 패턴의 열전도도는 상기 제 1 반도체 패턴의 열전도도 보다 작고, 상기 제 2 장벽 패턴의 열전도도는 상기 제 2 반도체 패턴의 열전도도 보다 작다. 상기 제 1 장벽 패턴의 전기 전도도는 상기 제 1 반도체 패턴 이상이고, 상기 제 2 장벽 패턴의 전기 전도도는 상기 제 2 반도체 패턴 이상이다. 상기 제 1 및 제 2 장벽 패턴은 상기 제 1 및 제 2 반도체 패턴과 오믹 콘택트를 이룬다.
열전 소자, ZT, 반도체 열전 소자, 장벽 패턴, 수직형, 실리사이드-
公开(公告)号：KR1020120077487A
公开(公告)日：2012-07-10
申请号：KR1020100139451
申请日：2010-12-30
Applicant: 한국전자통신연구원
CPC classification number: H01L29/0673 , B82Y40/00 , H01L35/22 , H01L35/32 , H01L35/02 , H01L35/14 , H01L35/30 , H01L35/34
Abstract: PURPOSE: A thermoelectric element and a manufacturing method thereof are provided to efficiently eliminate an oxide film from a bottom portion of a dielectric layer in a short time by using one or more holes included in an insulating layer. CONSTITUTION: A silicon heat absorbing part(140), a silicon nano wire leg, and a silicon heat radiating part(160)are formed on a substrate(110). The silicon absorbing part is formed on an upper part of the substrate and absorbs heat. The silicon nano wire leg transfers the heat. The silicon heat radiating part emits the heat. Insulating layers(170a, 170b) are formed on an upper portion of the substrate and include one or more holes(172a, 172b).
Abstract translation: 目的：提供一种热电元件及其制造方法，通过使用包含在绝缘层中的一个或多个孔，在短时间内有效地从电介质层的底部消除氧化膜。 构成：在基板（110）上形成有硅吸热部（140），硅纳米线脚和硅散热部（160）。 硅吸收部形成在基板的上部并吸收热量。 硅纳米线腿传递热量。 硅散热部散热。 绝缘层（170a，170b）形成在基板的上部，并且包括一个或多个孔（172a，172b）。
-
公开(公告)号：KR1020110095109A
公开(公告)日：2011-08-24
申请号：KR1020100088107
申请日：2010-09-08
Applicant: 한국전자통신연구원
IPC: B82B3/00 , H01L35/02 , H01L27/146
CPC classification number: H01L35/32 , H01L27/146 , H01L35/14 , H01L35/34
Abstract: PURPOSE: A thermoelectric element, a method for forming the same, a temperature detecting sensor using the same, and a heating source image sensor using the same are provided to mass-produce nanowires and reduce time required for forming the nanowires using a photo-etching process and an ashing process. CONSTITUTION: A first nanowrie(132) and a second nanowire(134) are separately arranged on a substrate. A first silicon thin film(122) is in connection with one end of the first nanowire. A second silicon thin film(124) is in connection with one end of the second nanowire. A third silicon thin film(126) is in connection with another end of the first nanowire and another end of the second nanowire. The first nanowire and the second nanowire are expanded to the horizontal direction with respect to the upper side of the substrate. A method for forming a thermoelectric element includes the following: An insulating film and a silicon layer are successively formed on the substrate. A photo-resist pattern with a first line-width is formed on the silicon layer. A photo-resist micropattern with a second line-width is formed by implementing an ashing process with respect to the photo-resist pattern. An etching process is implemented with respect to the silicon layer using the photo-resist micropattern as a mask to form the nanowires.
Abstract translation: 目的：提供一种热电元件，其形成方法，使用该温度检测传感器的温度检测传感器和使用该温度检测传感器的加热源图像传感器，以大量生产纳米线并减少使用光蚀刻形成纳米线所需的时间 过程和灰化过程。 构成：第一纳米纤维（132）和第二纳米线（134）分别布置在基底上。 第一硅薄膜（122）与第一纳米线的一端相连。 第二硅薄膜（124）与第二纳米线的一端连接。 第三硅薄膜（126）与第一纳米线的另一端和第二纳米线的另一端连接。 第一纳米线和第二纳米线相对于基板的上侧向水平方向扩展。 形成热电元件的方法包括：在基板上依次形成绝缘膜和硅层。 在硅层上形成具有第一线宽的光刻胶图形。 通过对光刻胶图案实施灰化处理，形成具有第二线宽的光刻胶微图案。 使用光致抗蚀剂微图案作为掩模，相对于硅层实现蚀刻工艺以形成纳米线。
-
-
-
-
-
-
-
Search Results
18
records
(took 0.021 seconds)
