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公开(公告)号:PL1815586T3
公开(公告)日:2014-03-31
申请号:PL04797258
申请日:2004-11-22
Applicant: ABB RESEARCH LTD
Inventor: STEIMER PETER , BARBOSA PETER , MEYSENC LUC
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公开(公告)号:CA2540306C
公开(公告)日:2013-04-30
申请号:CA2540306
申请日:2003-11-20
Applicant: ABB RESEARCH LTD
Inventor: BARBOSA PETER , STEINKE JUERGEN , STEIMER PETER , MEYSENC LUC , MEYNARD THIERRY
IPC: H02M1/00 , H02M1/12 , H02M3/07 , H02M3/158 , H02M5/293 , H02M7/155 , H02M7/48 , H02M7/483 , H02M7/537
Abstract: A converter circuit is specified for switching a large number of switching voltage levels, which has n first switching groups for each phase. The nth first switching group is formed by a first and a second power semiconductor switch and the first first to the (n-1)th switching groups are each formed by a first and a second power semiconductor switch and by a capacitor connected thereto. Each of the n first switching groups is connected in series to the respectively adjacent first switching group and the first and second power semiconductor switches in the first first switching group are connected to one another. To reduce the amount of electrical energy stored in the converter circuit, n >= 1 and p second switching groups and p third switching groups are provided, which are each formed by a first and a second power semiconductor switch and by a capacitor connected thereto.
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公开(公告)号:AT542296T
公开(公告)日:2012-02-15
申请号:AT05786735
申请日:2005-10-04
Applicant: ABB RESEARCH LTD
Inventor: CELANOVIC NIKOLA , MEYSENC LUC , MAZUR MICHAEL , RUDOLF PAUL
IPC: H03K17/785
Abstract: A signal transmission system is used to drive at least one power semiconductor switch (S 1 , S 2 , . . . , S n ) from a controller ( 11 ). The controller ( 11 ) can transmit at least one control signal to at least one modulator (M 1 , M 2 , . . . , M n ) using at least one first transmission path ( 3 ). Each power semiconductor switch (S 1 , S 2 , . . . , S n ) is connected to a respective control electrode driver stage (G 1 , G 2 , . . . , G n ) and the at least one modulator (M 1 , M 2 , . . . , M n ) can transmit at least one drive signal to each of the control electrode driver stages (G 1 , G 2 , . . . , G n ) using a respective second transmission path ( 4 ). At least one control signal and/or a drive signal can be transmitted using electromagnetic radiation and the associated transmission path ( 3, 4 ) is wireless.
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公开(公告)号:CA2655224A1
公开(公告)日:2008-01-10
申请号:CA2655224
申请日:2007-05-31
Applicant: ABB RESEARCH LTD
Inventor: BARBOSA PETER , MEYSENC LUC , STEIMER PETER , WINKELNKEMPER MANFRED
IPC: H02M7/00
Abstract: The invention relates to a circuit arrangement for electrically controlli ng power, comprising at least one power control device (201a-201c, 202a-202c ) and at least one heat extraction device (101a-101c). The at least one extr action device (101a-101c) is in thermal contact with the at least one power control device (201a-201c, 202a-202c). The heat extraction device (101a-101c ) is arranged such that it can be clamped to a fixed predefined electric pot ential (103a-103c) and electrically insulated by the at least one power cont rol device (201a-201c, 202a-202c).
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公开(公告)号:AU2003275906A1
公开(公告)日:2005-04-27
申请号:AU2003275906
申请日:2003-11-20
Applicant: ABB RESEARCH LTD
Inventor: STEIMER PETER , MEYSENC LUC , MEYNARD THIERRY , BARBOSA PETER , STEINKE JURGEN
Abstract: A converter circuit is specified for switching a large number of switching voltage levels, which has n first switching groups for each phase, with the n-th first switching group being formed by a first power semiconductor switch and a second power semiconductor switch, and with the first first switching group to the-th switching group each being formed by a first power semiconductor switch and a second power semiconductor switch and by a capacitor, which is connected to the first and second power semiconductor switches, with each of the n first switching groups being connected in series to the respectively adjacent first switching group, and with the first and the second power semiconductor switches in the first first switching group being connected to one another. In order to reduce the amount of electrical energy stored in the converter circuit, n>=1 and p second switching groups and p third switching groups are provided, which are each formed by a first power semiconductor switch and a second power semiconductor switch and by a capacitor which is connected to the first and second power semiconductor switches, where p>=1 and each of the p second switching groups is connected in series with the respectively adjacent second switching group, and each of the p third switching groups is connected in series with the respectively adjacent third switching group, and the first second switching group is connected to the first power semiconductor switch in the n-th first switching group, and the first third switching group is connected to the second power semiconductor switch in the n-th first switching group. Furthermore, the capacitor in the p-th second switching group is connected in series with the capacitor in the p-th third switching group.
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公开(公告)号:ES2407815T3
公开(公告)日:2013-06-14
申请号:ES05784457
申请日:2005-09-27
Applicant: ABB RESEARCH LTD
Inventor: AKDAG ALPER , STEFANUTTI PHILIPPE , MEYSENC LUC , HUGO NICOLAS
IPC: H02M1/04 , G01R19/175 , H02M7/505 , H02M7/5387
Abstract: Procedimiento para la determinación del paso por cero de corriente en un convertidor con al menos dos brazos deconvertidor de corriente, fluyendo la corriente de manera alterna por al menos un primer brazo de convertidor de corriente y por al menos un segundo brazo de convertidor de corriente y con un dispositivo para la determinación delmomento del paso por cero de corriente, caracterizado por que la corriente se mide por medio del dispositivo, apartir de los valores de corriente medidos se determina una amplitud máxima de la corriente Imáx en una semiondapositiva y/o negativa, el valor de corriente medido se compara en el dispositivo con un valor umbral de corriente Iset ymediante el momento en el que la corriente obtiene el valor del valor umbral de corriente Iset antes del paso por cerode corriente y del valor de la amplitud máxima de la corriente Imáx de una semionda se determina un periodoprevisible Δt desde la obtención del valor umbral de corriente Iset hasta la obtención del paso por cero de corrientepor medio del dispositivo.
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公开(公告)号:BR0318551A
公开(公告)日:2006-10-10
申请号:BR0318551
申请日:2003-11-20
Applicant: ABB RESEARCH LTD
Inventor: BARBOSA PETER , STEINKE JUERGEN , STEIMER PETER , MEYSENC LUC , MEYNARD THIERRY
Abstract: A converter circuit is specified for switching a large number of switching voltage levels, which has n first switching groups for each phase, with the n-th first switching group being formed by a first power semiconductor switch and a second power semiconductor switch, and with the first first switching group to the-th switching group each being formed by a first power semiconductor switch and a second power semiconductor switch and by a capacitor, which is connected to the first and second power semiconductor switches, with each of the n first switching groups being connected in series to the respectively adjacent first switching group, and with the first and the second power semiconductor switches in the first first switching group being connected to one another. In order to reduce the amount of electrical energy stored in the converter circuit, n>=1 and p second switching groups and p third switching groups are provided, which are each formed by a first power semiconductor switch and a second power semiconductor switch and by a capacitor which is connected to the first and second power semiconductor switches, where p>=1 and each of the p second switching groups is connected in series with the respectively adjacent second switching group, and each of the p third switching groups is connected in series with the respectively adjacent third switching group, and the first second switching group is connected to the first power semiconductor switch in the n-th first switching group, and the first third switching group is connected to the second power semiconductor switch in the n-th first switching group. Furthermore, the capacitor in the p-th second switching group is connected in series with the capacitor in the p-th third switching group.
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公开(公告)号:DE50300583D1
公开(公告)日:2005-06-30
申请号:DE50300583
申请日:2003-02-13
Applicant: ABB RESEARCH LTD
Inventor: MEYSENC LUC , HAMIDI AMINA , JOERG PIEDER , AKDAG ALPER
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公开(公告)号:CA2540306A1
公开(公告)日:2005-04-21
申请号:CA2540306
申请日:2003-11-20
Applicant: ABB RESEARCH LTD
Inventor: MEYNARD THIERRY , MEYSENC LUC , STEINKE JUERGEN , BARBOSA PETER , STEIMER PETER
Abstract: A converter circuit is specified for switching a large number of switching voltage levels, which has n first switching groups for each phase, with the n-th first switching group being formed by a first power semiconductor switch and a second power semiconductor switch, and with the first first switching group to the-th switching group each being formed by a first power semiconductor switch and a second power semiconductor switch and by a capacitor, which is connected to the first and second power semiconductor switches, with each of the n first switching groups being connected in series to the respectively adjacent first switching group, and with the first and the second power semiconductor switches in the first first switching group being connected to one another. In order to reduce the amount of electrical energy stored in the converter circuit, n>=1 and p second switching groups and p third switching groups are provided, which are each formed by a first power semiconductor switch and a second power semiconductor switch and by a capacitor which is connected to the first and second power semiconductor switches, where p>=1 and each of the p second switching groups is connected in series with the respectively adjacent second switching group, and each of the p third switching groups is connected in series with the respectively adjacent third switching group, and the first second switching group is connected to the first power semiconductor switch in the n-th first switching group, and the first third switching group is connected to the second power semiconductor switch in the n-th first switching group. Furthermore, the capacitor in the p-th second switching group is connected in series with the capacitor in the p-th third switching group.
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