ADJUSTING METHOD FOR TURNING-ON OF IGBT AND DEVICE FOR CONDUCTING THE METHOD

    公开(公告)号:JPH1012629A

    公开(公告)日:1998-01-16

    申请号:JP6263697

    申请日:1997-03-17

    Inventor: JOERG PIEDER

    Abstract: PROBLEM TO BE SOLVED: To maintain all operations of an IGBT within a safe working area without requiring any limiting device nor monitoring device on a load side by causing a control current formed in accordance with the compared results of the actual voltage value of a gate electrode with a desired value to act on the gate electrode. SOLUTION: A control current formed in accordance with the compared result of the actual voltage value of a gate electrode 6 with a desired value is made to act on the electrode 6. For example, the voltage at the gate electrode 6 of an IGBT 1 is compared with a prescribed voltage curve outputted from a function generator 3 by means of a differential amplifier 4. The compared result is amplified and drives a voltage-controlled current source 2 and the IGBT 1 is controlled by the gate current supplied from the current source 2. The voltage rise function generated from the function generator 3 is adjusted so that the voltage at the electrode 6 can rise to the threshold voltage of the IGBT 1 in a first section and further rise to the maximum value of the gate voltage from the threshold voltage in a second section.

    MODULE HOUSING AND POWER SEMICONDUCTOR MODULE

    公开(公告)号:JP2003204037A

    公开(公告)日:2003-07-18

    申请号:JP2002364007

    申请日:2002-12-16

    Abstract: PROBLEM TO BE SOLVED: To provide a module housing and a power semiconductor module having an improved dielectric strength and an enhanced blocking voltage performance. SOLUTION: A power module housing comprises two electric insulation housing elements (1, 2) being fixed mutually. The first housing element (2) has power terminals (31, 32) and at least two openings (24) for groove-like recesses (23). Three insulation walls (11, 21, 22) are arranged on the surface of the housing and perpendicularly thereto between the openings (24). One insulation wall (11) is a part of the second housing element (1) and inserted into the recess (23) of the first housing element (2), and at least one of the second insulation walls (21, 22) is a part of the first housing element (2). Arrangement of the terminals can be simplified by the insulation walls between the openings for power terminals. COPYRIGHT: (C)2003,JPO

    4.
    发明专利
    未知

    公开(公告)号:DE19959003A1

    公开(公告)日:2001-06-13

    申请号:DE19959003

    申请日:1999-12-08

    Inventor: JOERG PIEDER

    Abstract: The invention relates to an electronic switch which is based on a semiconductor and which comprises a current protection device that protects against excess current. The protective device comprises a magnetic field sensor which is located on a current-carrying conductor (7) and which measures the flow of current. A body (8), which is made of a material having a magnetic permeability that is significantly greater than 1, is arranged together with the magnetic field sensor in order to increase the sensitivity of the sensor and to reduce the dependency thereof on current non-homogeneities.

    5.
    发明专利
    未知

    公开(公告)号:DE60129146D1

    公开(公告)日:2007-08-09

    申请号:DE60129146

    申请日:2001-12-24

    Abstract: The power module housing comprises two electrically insulating housing elements (1, 2) that are attached to each other. A first of said housing elements (2) comprises at least two openings (24) for electric power terminals (31, 32) and a slot-like recess (23). Between the openings (24) three insulating walls (11, 21, 22) are arranged on and perpendicular to a surface of the housing. One insulating wall (11) is part of a second of said housing elements (1) and is inserted into the recess (23) in said first housing element (2), while an at least one second of said insulating walls (21, 22) is part of the first housing element (2). The insulating walls between the openings for the power terminals allow a compact arrangement of the terminals.

    7.
    发明专利
    未知

    公开(公告)号:DE60129146T2

    公开(公告)日:2007-12-13

    申请号:DE60129146

    申请日:2001-12-24

    Abstract: The power module housing comprises two electrically insulating housing elements (1, 2) that are attached to each other. A first of said housing elements (2) comprises at least two openings (24) for electric power terminals (31, 32) and a slot-like recess (23). Between the openings (24) three insulating walls (11, 21, 22) are arranged on and perpendicular to a surface of the housing. One insulating wall (11) is part of a second of said housing elements (1) and is inserted into the recess (23) in said first housing element (2), while an at least one second of said insulating walls (21, 22) is part of the first housing element (2). The insulating walls between the openings for the power terminals allow a compact arrangement of the terminals.

    10.
    发明专利
    未知

    公开(公告)号:DE19610895A1

    公开(公告)日:1997-09-25

    申请号:DE19610895

    申请日:1996-03-20

    Inventor: JOERG PIEDER

    Abstract: The method is applied to an IGBT (1) with an inverse-parallel free-wheel diode (5). The gate electrode (6) is driven by a voltage-controlled current source (2) receiving the output from a differential amplifier (4) which compares the gate voltage with the waveform of a rising-voltage function generator (3). The control assimilates the load current during the switching-on process to a predetermined trajectory, without actually measuring it. The voltage rises first to the threshold of the IGBT, then to a value corresponding to the full load current, and finally to the maximum gate voltage.

Patent Agency Ranking