公开(公告)号：JP2003204037A

公开(公告)日：2003-07-18

申请号：JP2002364007

申请日：2002-12-16

Applicant: ABB RESEARCH LTD

Inventor： MEYSENC LUC ,  HAMIDI AMINA ,  JOERG PIEDER ,  AKDAG ALPER

IPC: H01L25/07 ,  H01L25/16 ,  H01L25/18

Abstract: PROBLEM TO BE SOLVED: To provide a module housing and a power semiconductor module having an improved dielectric strength and an enhanced blocking voltage performance. SOLUTION: A power module housing comprises two electric insulation housing elements (1, 2) being fixed mutually. The first housing element (2) has power terminals (31, 32) and at least two openings (24) for groove-like recesses (23). Three insulation walls (11, 21, 22) are arranged on the surface of the housing and perpendicularly thereto between the openings (24). One insulation wall (11) is a part of the second housing element (1) and inserted into the recess (23) of the first housing element (2), and at least one of the second insulation walls (21, 22) is a part of the first housing element (2). Arrangement of the terminals can be simplified by the insulation walls between the openings for power terminals. COPYRIGHT: (C)2003,JPO

公开(公告)号：JP2003197861A

公开(公告)日：2003-07-11

申请号：JP2002350739

申请日：2002-12-03

Applicant: ABB RESEARCH LTD

Inventor： BIJLENGA BO ,  ZWICK FABIAN ,  HAMIDI AMINA ,  MEYSENC LUC ,  KAUFMANN STEFAN ,  ERNE PATRICK

IPC: H01L23/48 ,  H01L25/07 ,  H01L25/18

Abstract: PROBLEM TO BE SOLVED: To provide a power semiconductor submodule and power semiconductor module which have higher blocking voltages and are substantially equal in physical height to each other. SOLUTION: The power semiconductor module (1) has at least two semiconductor chips (21, 22), which have two main electrodes 3 and 4 between two main connection parts (6, 7) and also have one main electrode (3) applied with a contact force by a contact die (8) to press the other electrode (4) against a base plate (5). Those two semiconductor chips (21, 22) are electrically connected in series between two main connection parts (6, 7) of the power semiconductor submodule. COPYRIGHT: (C)2003,JPO

公开(公告)号：WO2012107482A2

公开(公告)日：2012-08-16

申请号：PCT/EP2012052118

申请日：2012-02-08

Applicant: ABB RESEARCH LTD ,  KICIN SLAVO ,  SCHULZ NICOLA ,  HAEFNER JUERGEN ,  LIU CHUNLEI ,  HAMIDI AMINA ,  FABIAN JAN-HENNING

Inventor： KICIN SLAVO ,  SCHULZ NICOLA ,  HAEFNER JUERGEN ,  LIU CHUNLEI ,  HAMIDI AMINA ,  FABIAN JAN-HENNING

IPC: H01L23/62 ,  H01L21/60 ,  H01L25/07

CPC classification number: H01L23/62 ,  H01L23/24 ,  H01L23/42 ,  H01L23/492 ,  H01L24/06 ,  H01L24/29 ,  H01L24/33 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L2224/06181 ,  H01L2224/29339 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/48247 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2224/83424 ,  H01L2224/83439 ,  H01L2224/83444 ,  H01L2224/83447 ,  H01L2224/83449 ,  H01L2224/8348 ,  H01L2224/8384 ,  H01L2924/00014 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2924/1203 ,  H01L2924/1301 ,  H01L2924/13023 ,  H01L2924/13028 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A semiconductor device (509a, b) comprises a semiconductor chip (504a, b) comprising a bottom electrode and a top electrode and a bottom electrode- baseplate (502). The bottom electrode-baseplate (502) is electrically and thermally conductive. The semiconductor device (509a, b) comprises a top electrode- baseplate (508). The top electrode-baseplate (508) is electrically and thermally conductive. The semiconductor device (509a, b) comprises a first preform (506a, b) made of material configured for supporting a creation of an electrically conductive alloy when being melted. In order to provide a semiconductor device having enhanced characteristics, the bottom electrode of the semiconductor chip (504a, b) is thermally and electrically connected to the bottom electrode-baseplate (502) via a first bonding layer (618), the top electrode of the semiconductor chip (504a, b) is thermally and electrically connected to a first side of the first preform (506a, b) via a second bonding layer (620), and the second side of the first preform (506a, b) is thermally and electrically connected to the top electrode- baseplate (508) via a third bonding layer (624).

Abstract translation: 半导体器件（509a，b）包括包括底电极和顶电极和底电极基板（502）的半导体芯片（504a，b）。 底部电极基板（502）是导电和导热的。 半导体器件（509a，b）包括顶部电极基板（508）。 顶部电极基板（508）是导电和导热的。 半导体器件（509a，b）包括由材料构成的第一预成型体（506a，b），其被配置为在熔化时支持导电合金的产生。 为了提供具有增强特性的半导体器件，半导体芯片（504a，b）的底部电极通过第一接合层（618）热电连接到底部电极 - 基板（502），顶部电极 半导体芯片（504a，b）通过第二接合层（620）热电连接到第一预制件（506a，b）的第一侧，并且第一预制件（506a，b）的第二侧是热的 并且经由第三粘合层（624）电连接到顶部电极基板（508）。

公开(公告)号：DE60129146D1

公开(公告)日：2007-08-09

申请号：DE60129146

申请日：2001-12-24

Applicant: ABB RESEARCH LTD

Inventor： MEYSENC LUC ,  HAMIDI AMINA ,  JOERG PIEDER ,  AKDAG ALPER

IPC: H01L25/16 ,  H01L25/07 ,  H01L25/18

Abstract: The power module housing comprises two electrically insulating housing elements (1, 2) that are attached to each other. A first of said housing elements (2) comprises at least two openings (24) for electric power terminals (31, 32) and a slot-like recess (23). Between the openings (24) three insulating walls (11, 21, 22) are arranged on and perpendicular to a surface of the housing. One insulating wall (11) is part of a second of said housing elements (1) and is inserted into the recess (23) in said first housing element (2), while an at least one second of said insulating walls (21, 22) is part of the first housing element (2). The insulating walls between the openings for the power terminals allow a compact arrangement of the terminals.

公开(公告)号：DE50300583D1

公开(公告)日：2005-06-30

申请号：DE50300583

申请日：2003-02-13

Applicant: ABB RESEARCH LTD

Inventor： MEYSENC LUC ,  HAMIDI AMINA ,  JOERG PIEDER ,  AKDAG ALPER

IPC: H01L25/07 ,  H01L23/04 ,  H01L23/053 ,  H01L23/10 ,  H01L23/62 ,  H01L25/18 ,  H05K5/06 ,  H05K7/14

公开(公告)号：DE60129146T2

公开(公告)日：2007-12-13

申请号：DE60129146

申请日：2001-12-24

Applicant: ABB RESEARCH LTD

Inventor： MEYSENC LUC ,  HAMIDI AMINA ,  JOERG PIEDER ,  AKDAG ALPER

IPC: H01L25/16 ,  H01L25/07 ,  H01L25/18

Abstract: The power module housing comprises two electrically insulating housing elements (1, 2) that are attached to each other. A first of said housing elements (2) comprises at least two openings (24) for electric power terminals (31, 32) and a slot-like recess (23). Between the openings (24) three insulating walls (11, 21, 22) are arranged on and perpendicular to a surface of the housing. One insulating wall (11) is part of a second of said housing elements (1) and is inserted into the recess (23) in said first housing element (2), while an at least one second of said insulating walls (21, 22) is part of the first housing element (2). The insulating walls between the openings for the power terminals allow a compact arrangement of the terminals.

公开(公告)号：AU2003203111A8

公开(公告)日：2003-09-04

申请号：AU2003203111

申请日：2003-02-13

Applicant: ABB RESEARCH LTD

Inventor： MEYSENC LUC ,  HAMIDI AMINA ,  AKDAG ALPER ,  JOERG PIEDER

IPC: H01L25/07 ,  H01L23/04 ,  H01L23/053 ,  H01L23/10 ,  H01L23/62 ,  H01L25/18 ,  H05K5/06 ,  H05K7/14

公开(公告)号：AU2003203111A1

公开(公告)日：2003-09-04

申请号：AU2003203111

申请日：2003-02-13

Applicant: ABB RESEARCH LTD

Inventor： MEYSENC LUC ,  HAMIDI AMINA ,  JOERG PIEDER ,  AKDAG ALPER

IPC: H01L25/07 ,  H01L23/04 ,  H01L23/053 ,  H01L23/10 ,  H01L23/62 ,  H01L25/18 ,  H05K5/06 ,  H05K7/14 ,  H05K7/00