公开(公告)号：SE9601174D0

公开(公告)日：1996-03-27

申请号：SE9601174

申请日：1996-03-27

Applicant: ABB RESEARCH LTD

Inventor： ROTTNER KURT

IPC: H01L21/04 ,  H01L

Abstract: A method for producing a semiconductor device comprises a step of implanting first conductivity type impurity dopants of at least two different elements in a semiconductor layer being doped according to a second opposite conductivity type, and after that anneal the semiconductor layer at such a high temperature that one of said elements is diffusing slowly into the semiconductor layer and the other is diffusing rapidly thereinto.

公开(公告)号：SE9503631D0

公开(公告)日：1995-10-18

申请号：SE9503631

申请日：1995-10-18

Applicant: ABB RESEARCH LTD

Inventor： HARRIS CHRISTOPHER ,  ROTTNER KURT

IPC: H01L21/04 ,  H01L

公开(公告)号：SE9603608D0

公开(公告)日：1996-10-03

申请号：SE9603608

申请日：1996-10-03

Applicant: ABB RESEARCH LTD

Inventor： SCHOENER ADOLF ,  ROTTNER KURT

IPC: C30B29/36 ,  C30B31/22 ,  H01L21/04 ,  H01L29/24 ,  C30B

Abstract: A method for producing a crystalline layer of SiC having at least a region thereof doped with boron atoms comprises a step a) of ion implantation of boron into a layer (1) of crystalline SiC and a step b) of heating the SiC-layer for annealing it for making the boron implanted therein electrically active. The method further comprises a step c) of implanting carbon atoms in said layer (1) for forming carbon interstitials in excess with respect to carbon vacancies present in the SiC-layer before carrying out step b).

公开(公告)号：SE9601176D0

公开(公告)日：1996-03-27

申请号：SE9601176

申请日：1996-03-27

Applicant: ABB RESEARCH LTD

Inventor： SCHOENER ADOLF ,  ROTTNER KURT ,  NORDELL NILS

IPC: H01L21/04 ,  H01L21/74 ,  H01L29/24 ,  H01L29/808 ,  H01L

Abstract: A method for producing a semiconductor device having semiconductor layers of SiC with at least three doped layers on top of each other, comprises the steps of growing a first semiconductor layer of SiC; implanting an impurity dopant into the first layer to form a second doped surface layer as a sub-layer therein, the second doped surface layer being surrounded, except for the top surface thereof, by the first semiconductor layer; and epitaxially growing a third semiconductor layer of SiC on top of the second layer of SiC and regions of the first layer adjacent thereto to totally bury the second semiconductor layer. The impurity dopant implanted into the first semiconductor layer is of a first conductivity n or p type, and the first semiconductor layer being doped with a second, opposite conductivity type, so as to form a pn-junction at the interface between the first and second layers.