公开(公告)号：WO9736317A3

公开(公告)日：1997-11-27

申请号：PCT/SE9700532

申请日：1997-03-26

Applicant: ABB RESEARCH LTD ,  SCHOENER ADOLF ,  ROTTNER KURT ,  NORDELL NILS

Inventor： SCHOENER ADOLF ,  ROTTNER KURT ,  NORDELL NILS

IPC: H01L21/04 ,  H01L21/74 ,  H01L29/24 ,  H01L29/808 ,  H01L

CPC classification number: H01L29/1608 ,  H01L21/046 ,  H01L21/74 ,  H01L29/66068 ,  H01L29/8083 ,  Y10S438/931

Abstract: A method for producing a semiconductor device having semiconductor layers of SiC with at least three doped layers on top of each other comprises: a step a) of growing a first semiconductor layer (1) of SiC; a step b) following on step a) of implanting an impurity dopant into said first layer for forming a second doped surface layer (3) as a sub-layer therein; and a step c) following upon step b) and in which a third semiconductor layer (4) of SiC is epitaxially grown on top of said second layer of SiC.

公开(公告)号：WO9802924A3

公开(公告)日：1998-03-05

申请号：PCT/SE9701157

申请日：1997-06-27

Applicant: ABB RESEARCH LTD ,  BAKOWSKI MIETEK ,  GUSTAFSSON ULF ,  ROTTNER KURT ,  SAVAGE SUSAN

Inventor： BAKOWSKI MIETEK ,  GUSTAFSSON ULF ,  ROTTNER KURT ,  SAVAGE SUSAN

IPC: H01L29/861 ,  H01L21/04 ,  H01L29/06 ,  H01L29/24 ,  H01L21/329

CPC classification number: H01L29/0619 ,  H01L21/0465 ,  H01L29/0615 ,  H01L29/1608 ,  H01L29/6606 ,  H01L2924/0002 ,  Y10S438/931 ,  H01L2924/00

Abstract: A semiconductor component and a method for processing said component, which comprises a pn junction, where both the p-conducting (3) and the n-conducting layers (2) of the pn junction constitute doped silicon carbide layers and where the edge of the higher doped conducting layer of the pn junction exhibits a charge profile with a stepwise or uniformly decreasing total charge or effective surface charge density from the initial value at the main pn junction to a zero or almost zero total charge or charge density at the outermost edge of the junction following a radial direction from the central part of the junction towards the outermost edge.

公开(公告)号：WO9736318A3

公开(公告)日：1997-12-04

申请号：PCT/SE9700533

申请日：1997-03-26

Applicant: ABB RESEARCH LTD ,  ROTTNER KURT

Inventor： ROTTNER KURT

IPC: H01L21/04 ,  H01L

CPC classification number: H01L29/6606 ,  H01L21/046

Abstract: A method for producing a semiconductor device comprises a step of implanting first conductivity type impurity dopants of at least two different elements in a semiconductor layer being doped according to a second opposite conductivity type, and after that annealing the semiconductor layer at such a high temperature that one of said elements is diffusing slowly into the semiconductor layer and the other is diffusing rapidly thereinto.

公开(公告)号：SE9802473D0

公开(公告)日：1998-07-09

申请号：SE9802473

申请日：1998-07-09

Applicant: ABB RESEARCH LTD

Inventor： ROTTNER KURT ,  SCHOENER ADOLF

IPC: H01L20060101 ,  H01L21/266 ,  H01L

公开(公告)号：SE9601175D0

公开(公告)日：1996-03-27

申请号：SE9601175

申请日：1996-03-27

Applicant: ABB RESEARCH LTD

Inventor： SCHOENER ADOLF ,  ROTTNER KURT

IPC: H01L29/24 ,  H01L29/45 ,  H01L

Abstract: A method for producing a semiconductor device comprising a step a) of implanting an impurity dopant of a first conductivity type into said semiconductor layer (1) being doped according to a second opposite conductivity type for forming a first type doped surface layer (2) surrounded, except for the top surface thereof, by second conductivity type doped regions (3) of said semiconductor layer for forming a pn-junction (4) at the interface thereto. A highly doped additional semiconductor layer (5) is grown on top of said surface layer (2) for forming a contact layer allowing a low resistance ohmic contact to be established to the device so created.

公开(公告)号：SE9802473L

公开(公告)日：1999-09-17

申请号：SE9802473

申请日：1998-07-09

Applicant: ABB RESEARCH LTD

Inventor： ROTTNER KURT ,  SCHOENER ADOLF

IPC: H01L20060101 ,  H01L21/266 ,  H01L21/77

公开(公告)号：SE9701724D0

公开(公告)日：1997-05-09

申请号：SE9701724

申请日：1997-05-09

Applicant: ABB RESEARCH LTD

Inventor： ROTTNER KURT ,  SCHOENER ADOLF ,  BAKOWSKI MIETEK

IPC: H01L21/04 ,  H01L29/24 ,  H01L29/861 ,  H01L

Abstract: A pn-diode of SiC has a first emitter layer part doped with first dopants having a low ionization energy and a second part designed as a grid and having portions extending vertically from above and past the junction between the drift layer and the first part and being laterally separated from each other by drift layer regions for forming a pn-junction by the first part and the drift layer adjacent such portions at a vertical distance from a lower end of the grid portions. The different parameters of the device are selected to allow a depletion of the drift layer in the blocking state form a continuous depleted region between the grid portions, to thereby screen off the high electric field at the pn-junction so that it will not be exposed to high electrical fields.

公开(公告)号：DE69719527T2

公开(公告)日：2003-12-24

申请号：DE69719527

申请日：1997-09-25

Applicant: ABB RESEARCH LTD

Inventor： ROTTNER KURT ,  SCHOENER ADOLF

IPC: C30B29/36 ,  C30B31/22 ,  H01L21/04 ,  H01L29/24

Abstract: A method for producing a crystalline layer of SiC having at least a region thereof doped with boron atoms comprises a step a) of ion implantation of boron into a layer (1) of crystalline SiC and a step b) of heating the SiC-layer for annealing it for making the boron implanted therein electrically active. The method further comprises a step c) of implanting carbon atoms in said layer (1) for forming carbon interstitials in excess with respect to carbon vacancies present in the SiC-layer before carrying out step b).

公开(公告)号：DE69719527D1

公开(公告)日：2003-04-10

申请号：DE69719527

申请日：1997-09-25

Applicant: ABB RESEARCH LTD

Inventor： ROTTNER KURT ,  SCHOENER ADOLF

IPC: C30B29/36 ,  C30B31/22 ,  H01L21/04 ,  H01L29/24

Abstract: A method for producing a crystalline layer of SiC having at least a region thereof doped with boron atoms comprises a step a) of ion implantation of boron into a layer (1) of crystalline SiC and a step b) of heating the SiC-layer for annealing it for making the boron implanted therein electrically active. The method further comprises a step c) of implanting carbon atoms in said layer (1) for forming carbon interstitials in excess with respect to carbon vacancies present in the SiC-layer before carrying out step b).

公开(公告)号：SE9700141D0

公开(公告)日：1997-01-20

申请号：SE9700141

申请日：1997-01-20

Applicant: ABB RESEARCH LTD

Inventor： HERMANSSON WILLY ,  BIJLENGA BO ,  RAMBERG LENNART ,  ROTTNER KURT ,  ZDANSKY LENNART ,  HARRIS CHRISTOPHER ,  BAKOWSKI MIETEK ,  SCHOENER ADOLF ,  LUNDBERG NILS ,  OESTLING MIKAEL ,  DAHLQUIST FANNY

IPC: H01L21/04 ,  H01L29/24 ,  H01L29/872 ,  H01L