公开(公告)号：US20230006567A1

公开(公告)日：2023-01-05

申请号：US17363802

申请日：2021-06-30

Applicant: ABB Schweiz AG

Inventor： Utkarsh RAHEJA ,  Eddy Aeloiza ,  Pietro Cairoli

IPC: H02M5/458 ,  H02H7/08

Abstract: A bi-directional switch for an inductive machine is described. The bi-directional switch may include a first power semiconductor transistor with a first source, a first drain, and a first gate. The bi-directional switch may further include a second power semiconductor transistor with a second source, a second drain, and a second gate. The bi-directional switch may include the second source connected to the first source. The bi-directional switch may include a soft-starter device including a control circuit configurable to provide a first control signal to the first power semiconductor transistor and a second control signal to the second power semiconductor transistor.

公开(公告)号：US11128290B2

公开(公告)日：2021-09-21

申请号：US16520532

申请日：2019-07-24

Applicant: ABB Schweiz AG

Inventor： Eddy Aeloiza ,  Arun Kumar Kadavelugu

IPC: H02H5/00 ,  H03K17/082 ,  G01R19/165 ,  G01R31/26 ,  H02H1/00 ,  H03K5/24

Abstract: Systems, methods, techniques and apparatuses of short circuit protection are disclosed. One exemplary embodiment is a method for protecting a semiconductor switch comprising receiving a measurement corresponding to an electrical characteristic of the semiconductor switch; determining a semiconductor switch resistance value using the received measurement; estimating a junction temperature of the semiconductor switch using the semiconductor switch resistance value; determining a short circuit voltage threshold using the estimated junction temperature; comparing the short circuit voltage threshold to a test voltage corresponding to a drain-source voltage of the semiconductor switch; determining a short circuit condition is occurring in response to comparing the short circuit voltage threshold and the test voltage; and opening the semiconductor switch in response to determining the short circuit condition is occurring.

公开(公告)号：US10393795B2

公开(公告)日：2019-08-27

申请号：US15659096

申请日：2017-07-25

Applicant: ABB Schweiz AG

Inventor： Eddy Aeloiza ,  Arun Kadavelugu ,  Joonas Puukko ,  Liming Liu ,  Jukka-Pekka Sjoroos

IPC: G01R31/26 ,  H01L29/16 ,  H01L29/78 ,  H03K17/687 ,  G01R31/28

Abstract: Unique systems, methods, techniques and apparatuses of semiconductor failure prognostication. One exemplary embodiment is a power converter comprising a semiconductor switch and a converter control system. The converter control system is configured to turn on the semiconductor switch, measure a first voltage and a current during reverse conduction, estimate junction temperature of the semiconductor device, turn off the semiconductor device, measure a second voltage after turning off the semiconductor device, determine a resistance value using the second voltage measurement, determine an expected resistance value, predict a failure of the semiconductor device using the resistance value and the expected resistance value, and transmit a semiconductor device failure warning.

公开(公告)号：US20190033362A1

公开(公告)日：2019-01-31

申请号：US15659096

申请日：2017-07-25

Applicant: ABB Schweiz AG

Inventor： Eddy Aeloiza ,  Arun Kadavelugu ,  Joonas Puukko ,  Liming Liu ,  Jukka-Pekka Sjoroos

IPC: G01R31/26 ,  H01L29/16 ,  H01L29/78 ,  H03K17/687

CPC classification number: G01R31/2621 ,  G01R31/2642 ,  G01R31/2817 ,  H01L29/1608 ,  H01L29/7805 ,  H03K17/687

Abstract: Unique systems, methods, techniques and apparatuses of semiconductor failure prognostication. One exemplary embodiment is a power converter comprising a semiconductor switch and a converter control system. The converter control system is configured to turn on the semiconductor switch, measure a first voltage and a current during reverse conduction, estimate junction temperature of the semiconductor device, turn off the semiconductor device, measure a second voltage after turning off the semiconductor device, determine a resistance value using the second voltage measurement, determine an expected resistance value, predict a failure of the semiconductor device using the resistance value and the expected resistance value, and transmit a semiconductor device failure warning.