公开(公告)号：US10882874B2

公开(公告)日：2021-01-05

申请号：US16308900

申请日：2017-05-15

Applicant: ADEKA CORPORATION

Inventor： Makoto Okabe ,  Akihiro Nishida ,  Tomoharu Yoshino

IPC: C07F9/00 ,  C23C16/18 ,  H01L21/285 ,  C07C251/08 ,  C23C16/34 ,  C23C16/455

Abstract: A vanadium compound represented by following General Formula (1). In General Formula (1), R1 represents a linear or branched alkyl group having 1 to 7 carbon atoms and n represents a number from 2 to 4. R1 preferably represents a secondary alkyl or a tertiary alkyl. It is preferred that in General Formula (1), n is 2 and R1 is tert-butyl group or tert-pentyl group, since the compound has a broad ALD window and high thermal decomposition temperature to be able to form a good quality vanadium-containing thin film that has a small carbon residue when used as an ALD material.

公开(公告)号：US20150266904A1

公开(公告)日：2015-09-24

申请号：US14434139

申请日：2013-11-26

Applicant: ADEKA CORPORATION

Inventor： Tomoharu Yoshino ,  Atsushi Sakurai ,  Tsubasa Shiratori ,  Masako Hatase ,  Hiroyuki Uchiuzou ,  Akihiro Nishida

IPC: C07F5/06 ,  C23C16/44 ,  C23C16/06

CPC classification number: C23C16/45553 ,  C07F5/069 ,  C23C16/06 ,  C23C16/403 ,  C23C16/44

Abstract: Disclosed is an aluminum compound of general formula (I) and a thin film forming material containing the aluminum compound. In formula (I), R1 and R2 each represent straight or branched C2-C5 alkyl, and R3 represent methyl or ethyl. R1 and R2 are each preferably ethyl. The compound has a low melting temperature, sufficient volatility, and high thermal stability and is therefore suited for use as a material for thin film formation by CVD.

Abstract translation: 公开了通式（I）的铝化合物和含有铝化合物的薄膜形成材料。 在式（I）中，R 1和R 2各自表示直链或支链C 2 -C 5烷基，R 3表示甲基或乙基。 R1和R2各自优选为乙基。 该化合物具有低的熔融温度，足够的挥发性和高的热稳定性，因此适合用作通过CVD形成薄膜的材料。