公开(公告)号：US11335896B2

公开(公告)日：2022-05-17

申请号：US16494838

申请日：2018-02-13

Applicant: ADEKA CORPORATION

Inventor： Akihiro Nishida ,  Atsushi Yamashita

IPC: H01M4/04 ,  C23C16/455

Abstract: A method for producing an yttrium oxide-containing thin film by atomic layer deposition, the method comprising: a step for introducing a raw material gas containing tris(sec-butylcyclopentadienyl) yttrium into a treatment atmosphere in order to deposit tris(sec-butylcyclopentadienyl) yttrium on a substrate; and a step for introducing a reactive gas containing water vapor into the treatment atmosphere and causing the reactive gas to react with the tris(sec-butylcyclopentadienyl) yttrium that has been deposited on the substrate, thereby oxidizing yttrium is provided.

公开(公告)号：US11161867B2

公开(公告)日：2021-11-02

申请号：US16346724

申请日：2017-10-05

Applicant: ADEKA CORPORATION

Inventor： Tomoharu Yoshino ,  Nana Okada ,  Akihiro Nishida ,  Atsushi Yamashita

IPC: C07F15/06 ,  C07C251/08 ,  C23C16/06 ,  C23C16/455

Abstract: A raw material for forming a thin film, comprising a compound represented by General Formula (1) below. (in the formula, R1 represents a linear or branched alkyl group having 1 to 5 carbon atoms, R2 represents hydrogen or a linear or branched alkyl group having 1 to 5 carbon atoms, R3 and R4 each independently represent a linear or branched alkyl group having 1 to 5 carbon atoms, A represents an alkanediyl group having 1 to 4 carbon atoms and M represents copper, iron, nickel, cobalt or manganese.).

公开(公告)号：US10920313B2

公开(公告)日：2021-02-16

申请号：US16326973

申请日：2017-07-05

Applicant: ADEKA CORPORATION

Inventor： Tomoharu Yoshino ,  Masaki Enzu ,  Akihiro Nishida ,  Atsushi Yamashita

IPC: C23C16/18 ,  C07C251/08 ,  C07F13/00 ,  C07F15/04 ,  C23C16/455

Abstract: A diazadienyl compound represented by General Formula (I) below: wherein R1 represents a C1-6 linear or branched alkyl group, and M represents nickel atom or manganese atom. In particular, since a compound in which R1 in General Formula (I) is a methyl group has a high vapor pressure and a high thermal decomposition starting temperature, the compound is useful as a raw material for forming a thin film by a CVD method or ALD method.

公开(公告)号：US09663538B2

公开(公告)日：2017-05-30

申请号：US14434139

申请日：2013-11-26

Applicant: ADEKA CORPORATION

Inventor： Tomoharu Yoshino ,  Atsushi Sakurai ,  Tsubasa Shiratori ,  Masako Hatase ,  Hiroyuki Uchiuzou ,  Akihiro Nishida

IPC: C07F5/06 ,  C23C16/40 ,  C23C16/06 ,  C23C16/44

CPC classification number: C23C16/45553 ,  C07F5/069 ,  C23C16/06 ,  C23C16/403 ,  C23C16/44

Abstract: Disclosed is an aluminum compound of general formula (I) and a thin film forming material containing the aluminum compound. In formula (I), R1 and R2 each represent straight or branched C2-C5 alkyl, and R3 represent methyl or ethyl. R1 and R2 are each preferably ethyl. The compound has a low melting temperature, sufficient volatility, and high thermal stability and is therefore suited for use as a material for thin film formation by CVD.

公开(公告)号：US10253408B2

公开(公告)日：2019-04-09

申请号：US15559127

申请日：2016-05-17

Applicant: ADEKA CORPORATION

Inventor： Tomoharu Yoshino ,  Masaki Enzu ,  Akihiro Nishida ,  Nana Sugiura

IPC: C07F13/00 ,  C07F15/04 ,  C07F15/06 ,  C23C16/18 ,  H01L21/285

Abstract: A novel compound represented by the general formula (I) or (II) below: [in the formula, each of R1 and R2 independently represent a C1˜12 hydrocarbon group, and Si(R3)3 is optionally substituted for a hydrogen atom in the hydrocarbon group; however, R1 and R2 are different groups; R3 represents a methyl or ethyl group; M represents a metal atom or silicon atom; and n is an integer from 1 to 4].

公开(公告)号：US11623935B2

公开(公告)日：2023-04-11

申请号：US17312637

申请日：2019-12-03

Applicant: ADEKA CORPORATION

Inventor： Atsushi Sakurai ,  Masako Hatase ,  Tomoharu Yoshino ,  Akihiro Nishida ,  Atsushi Yamashita

IPC: C23C16/18 ,  C23C16/455 ,  C07F7/22

Abstract: Provided is a thin-film forming raw material, which is used in an atomic layer deposition method, including an alkoxide compound represented by the following general formula (1): where R1 represents a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, R2 and R3 each independently represent an alkyl group having 1 to 5 carbon atoms, and z1 represents an integer of from 1 to 3.

公开(公告)号：US11618762B2

公开(公告)日：2023-04-04

申请号：US17490227

申请日：2021-09-30

Applicant: ADEKA CORPORATION

Inventor： Tomoharu Yoshino ,  Nana Okada ,  Akihiro Nishida ,  Atsushi Yamashita

IPC: C07F15/06 ,  C07C251/08 ,  C23C16/06 ,  C23C16/455

Abstract: A raw material for forming a thin film, comprising a compound represented by General Formula (1) below. wherein R1 represents an isopropyl group, R2 represents a methyl group, R3 and R4 each independently represent a linear or branched alkyl group having 1 to 5 carbon atoms, A represents a propane-1,2-diyl group and M represents copper, nickel, cobalt or manganese.

公开(公告)号：US11408069B2

公开(公告)日：2022-08-09

申请号：US17291446

申请日：2019-10-28

Applicant: ADEKA CORPORATION

Inventor： Akihiro Nishida ,  Masaki Enzu

IPC: C23C16/455 ,  C23C16/18

Abstract: A method of the present invention for producing a metallic ruthenium thin film on a substrate by atomic layer deposition includes: (A) a step of introducing a feedstock gas containing a specific ruthenium compound into a treatment atmosphere, and allowing the ruthenium compound to deposit on the substrate; and a step of introducing a reactive gas containing a specific compound into the treatment atmosphere, and allowing the reactive gas to react with the specific ruthenium compound deposited on the substrate.

公开(公告)号：US10364495B2

公开(公告)日：2019-07-30

申请号：US15483110

申请日：2017-04-10

Applicant: ADEKA CORPORATION

Inventor： Tomoharu Yoshino ,  Atsushi Sakurai ,  Tsubasa Shiratori ,  Masako Hatase ,  Hiroyuki Uchiuzou ,  Akihiro Nishida

IPC: C23C16/44 ,  C23C16/455 ,  C07F5/06 ,  C23C16/40 ,  C23C16/06

Abstract: The present invention relates to an aluminum compound represented by general formula (I). The present invention also relates to a thin film-forming raw material that contains this aluminum compound. In general formula (I), R1 and R2 each independently denote a straight chain or branched alkyl group having 2-5 carbon atoms, and R3 denotes a methyl group or ethyl group. It is preferable for R1 and R2 to be ethyl groups. This compound has a low melting point, exhibits satisfactory volatility, has high thermal stability, and is suitable for use as a raw material used to form a thin film by a CVD method.

公开(公告)号：US09994593B2

公开(公告)日：2018-06-12

申请号：US15306812

申请日：2015-04-08

Applicant: ADEKA CORPORATION

Inventor： Tomoharu Yoshino ,  Masaki Enzu ,  Atsushi Sakurai ,  Akihiro Nishida ,  Makoto Okabe

IPC: C07F1/08 ,  C07C215/08 ,  C23C16/18 ,  H01L21/28 ,  H01L21/285 ,  C09D1/00 ,  C09D5/24 ,  C23C16/06 ,  C23C16/455

CPC classification number: C07F1/08 ,  C07C215/08 ,  C09D1/00 ,  C09D5/24 ,  C23C16/06 ,  C23C16/18 ,  C23C16/45525 ,  C23C16/45542 ,  C23C16/45553 ,  H01L21/28 ,  H01L21/285

Abstract: This invention provides a copper compound represented by General Formula (I) below. In General Formula (I), R1 to R3 independently represent a linear or branched alkyl group with a carbon number of 1 to 5; provided that R1 and R2 are a methyl group, R3 represents a linear or branched alkyl group with a carbon number of 2 to 5; and provided that R1 is a methyl group and R2 is an ethyl group, R3 represents a methyl group or a linear or branched alkyl group with a carbon number of 3 to 5. A starting material for forming a thin film of the present invention includes the copper compound represented by General Formula (I). The present invention can provide a copper compound which has a low melting point, can be conveyed in a liquid state, has a high vapor pressure, and is easily vaporizable, and also a starting material for forming a thin film which uses such a copper compound.