公开(公告)号：US09663538B2

公开(公告)日：2017-05-30

申请号：US14434139

申请日：2013-11-26

Applicant: ADEKA CORPORATION

Inventor： Tomoharu Yoshino ,  Atsushi Sakurai ,  Tsubasa Shiratori ,  Masako Hatase ,  Hiroyuki Uchiuzou ,  Akihiro Nishida

IPC: C07F5/06 ,  C23C16/40 ,  C23C16/06 ,  C23C16/44

CPC classification number: C23C16/45553 ,  C07F5/069 ,  C23C16/06 ,  C23C16/403 ,  C23C16/44

Abstract: Disclosed is an aluminum compound of general formula (I) and a thin film forming material containing the aluminum compound. In formula (I), R1 and R2 each represent straight or branched C2-C5 alkyl, and R3 represent methyl or ethyl. R1 and R2 are each preferably ethyl. The compound has a low melting temperature, sufficient volatility, and high thermal stability and is therefore suited for use as a material for thin film formation by CVD.

公开(公告)号：US20150266904A1

公开(公告)日：2015-09-24

申请号：US14434139

申请日：2013-11-26

Applicant: ADEKA CORPORATION

Inventor： Tomoharu Yoshino ,  Atsushi Sakurai ,  Tsubasa Shiratori ,  Masako Hatase ,  Hiroyuki Uchiuzou ,  Akihiro Nishida

IPC: C07F5/06 ,  C23C16/44 ,  C23C16/06

CPC classification number: C23C16/45553 ,  C07F5/069 ,  C23C16/06 ,  C23C16/403 ,  C23C16/44

Abstract: Disclosed is an aluminum compound of general formula (I) and a thin film forming material containing the aluminum compound. In formula (I), R1 and R2 each represent straight or branched C2-C5 alkyl, and R3 represent methyl or ethyl. R1 and R2 are each preferably ethyl. The compound has a low melting temperature, sufficient volatility, and high thermal stability and is therefore suited for use as a material for thin film formation by CVD.

Abstract translation: 公开了通式（I）的铝化合物和含有铝化合物的薄膜形成材料。 在式（I）中，R 1和R 2各自表示直链或支链C 2 -C 5烷基，R 3表示甲基或乙基。 R1和R2各自优选为乙基。 该化合物具有低的熔融温度，足够的挥发性和高的热稳定性，因此适合用作通过CVD形成薄膜的材料。

公开(公告)号：US20210380622A1

公开(公告)日：2021-12-09

申请号：US17215056

申请日：2021-03-29

Applicant: Samsung Electronics Co., Ltd. ,  ADEKA CORPORATION

Inventor： Seung-Min Ryu ,  Gyu-Hee Park ,  Youn Joung Cho ,  Kazuki Harano ,  Takanori Koide ,  Wakana Fuse ,  Yoshiki Manabe ,  Yutaro Aoki ,  Hiroyuki Uchiuzou ,  Kazuya Saito

IPC: C07F17/00 ,  C23C16/18 ,  C23C16/455

Abstract: Materials for fabricating a thin film that has improved quality and productivity are provided. The materials may include a Group 5 element precursor of formula (1): M1 may be a Group 5 element, each of R1 to R10 independently may be a hydrogen atom, a substituted or unsubstituted alkyl group having 1 to 5 carbon atoms, or f7onnula (2), R11 may be a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, and L1 may be an alkyl group, an alkylamino group, an alkoxy group or an alkylsilyl group, each of which may have 1 to 5 carbon atoms and may be substituted or unsubstituted. Formula (2) may have a structure of Each of Ra to Rc independently may be a substituted or unsubstituted alkyl group having 1 to 5 carbon atoms.

公开(公告)号：US10364495B2

公开(公告)日：2019-07-30

申请号：US15483110

申请日：2017-04-10

Applicant: ADEKA CORPORATION

Inventor： Tomoharu Yoshino ,  Atsushi Sakurai ,  Tsubasa Shiratori ,  Masako Hatase ,  Hiroyuki Uchiuzou ,  Akihiro Nishida

IPC: C23C16/44 ,  C23C16/455 ,  C07F5/06 ,  C23C16/40 ,  C23C16/06

Abstract: The present invention relates to an aluminum compound represented by general formula (I). The present invention also relates to a thin film-forming raw material that contains this aluminum compound. In general formula (I), R1 and R2 each independently denote a straight chain or branched alkyl group having 2-5 carbon atoms, and R3 denotes a methyl group or ethyl group. It is preferable for R1 and R2 to be ethyl groups. This compound has a low melting point, exhibits satisfactory volatility, has high thermal stability, and is suitable for use as a raw material used to form a thin film by a CVD method.