公开(公告)号：US09663538B2

公开(公告)日：2017-05-30

申请号：US14434139

申请日：2013-11-26

Applicant: ADEKA CORPORATION

Inventor： Tomoharu Yoshino ,  Atsushi Sakurai ,  Tsubasa Shiratori ,  Masako Hatase ,  Hiroyuki Uchiuzou ,  Akihiro Nishida

IPC: C07F5/06 ,  C23C16/40 ,  C23C16/06 ,  C23C16/44

CPC classification number: C23C16/45553 ,  C07F5/069 ,  C23C16/06 ,  C23C16/403 ,  C23C16/44

Abstract: Disclosed is an aluminum compound of general formula (I) and a thin film forming material containing the aluminum compound. In formula (I), R1 and R2 each represent straight or branched C2-C5 alkyl, and R3 represent methyl or ethyl. R1 and R2 are each preferably ethyl. The compound has a low melting temperature, sufficient volatility, and high thermal stability and is therefore suited for use as a material for thin film formation by CVD.

公开(公告)号：US10364495B2

公开(公告)日：2019-07-30

申请号：US15483110

申请日：2017-04-10

Applicant: ADEKA CORPORATION

Inventor： Tomoharu Yoshino ,  Atsushi Sakurai ,  Tsubasa Shiratori ,  Masako Hatase ,  Hiroyuki Uchiuzou ,  Akihiro Nishida

IPC: C23C16/44 ,  C23C16/455 ,  C07F5/06 ,  C23C16/40 ,  C23C16/06

Abstract: The present invention relates to an aluminum compound represented by general formula (I). The present invention also relates to a thin film-forming raw material that contains this aluminum compound. In general formula (I), R1 and R2 each independently denote a straight chain or branched alkyl group having 2-5 carbon atoms, and R3 denotes a methyl group or ethyl group. It is preferable for R1 and R2 to be ethyl groups. This compound has a low melting point, exhibits satisfactory volatility, has high thermal stability, and is suitable for use as a raw material used to form a thin film by a CVD method.

公开(公告)号：US10011623B2

公开(公告)日：2018-07-03

申请号：US15318755

申请日：2015-07-16

Applicant: ADEKA CORPORATION

Inventor： Atsushi Sakurai ,  Masako Hatase ,  Tomoharu Yoshino ,  Masaki Enzu

IPC: C07F15/06 ,  C07F15/04 ,  C07C251/08 ,  C07F7/08 ,  C07C251/76 ,  C07F7/10 ,  C23C16/18

CPC classification number: C07F15/065 ,  C07C251/08 ,  C07C251/76 ,  C07F7/081 ,  C07F7/10 ,  C07F15/04 ,  C07F15/045 ,  C07F15/06 ,  C23C16/18 ,  C23C16/45525

Abstract: The alkoxide compound of the present invention is characteristically represented by the following general formula (I):

公开(公告)号：US09994593B2

公开(公告)日：2018-06-12

申请号：US15306812

申请日：2015-04-08

Applicant: ADEKA CORPORATION

Inventor： Tomoharu Yoshino ,  Masaki Enzu ,  Atsushi Sakurai ,  Akihiro Nishida ,  Makoto Okabe

IPC: C07F1/08 ,  C07C215/08 ,  C23C16/18 ,  H01L21/28 ,  H01L21/285 ,  C09D1/00 ,  C09D5/24 ,  C23C16/06 ,  C23C16/455

CPC classification number: C07F1/08 ,  C07C215/08 ,  C09D1/00 ,  C09D5/24 ,  C23C16/06 ,  C23C16/18 ,  C23C16/45525 ,  C23C16/45542 ,  C23C16/45553 ,  H01L21/28 ,  H01L21/285

Abstract: This invention provides a copper compound represented by General Formula (I) below. In General Formula (I), R1 to R3 independently represent a linear or branched alkyl group with a carbon number of 1 to 5; provided that R1 and R2 are a methyl group, R3 represents a linear or branched alkyl group with a carbon number of 2 to 5; and provided that R1 is a methyl group and R2 is an ethyl group, R3 represents a methyl group or a linear or branched alkyl group with a carbon number of 3 to 5. A starting material for forming a thin film of the present invention includes the copper compound represented by General Formula (I). The present invention can provide a copper compound which has a low melting point, can be conveyed in a liquid state, has a high vapor pressure, and is easily vaporizable, and also a starting material for forming a thin film which uses such a copper compound.

公开(公告)号：US12276022B2

公开(公告)日：2025-04-15

申请号：US18014371

申请日：2021-06-25

Applicant: ADEKA CORPORATION

Inventor： Atsushi Sakurai ,  Masako Hatase ,  Nana Okada ,  Ryota Fukushima

IPC: C23C16/455 ,  C23C16/18

Abstract: A method for producing a thin-film containing a metal atom or a semimetal atom on the surface of a substrate, comprising the steps of vaporizing a thin-film forming raw material comprising an alkoxide compound represented by the following general formula (1), introducing the vaporized compound into a treatment atmosphere, and subjecting the vaporized compound to decomposition and/or a chemical reaction, to thereby form the thin-film containing a metal atom or a semimetal atom on the surface of the substrate: where R1 to R6, M and n are defined herein.

公开(公告)号：US12104245B2

公开(公告)日：2024-10-01

申请号：US17771181

申请日：2020-10-19

Applicant: ADEKA CORPORATION

Inventor： Atsushi Sakurai ,  Masako Hatase ,  Masaki Enzu ,  Keisuke Takeda ,  Ryota Fukushima ,  Atsushi Yamashita

IPC: C23C16/18 ,  C07D487/10 ,  C07F1/00 ,  C07F3/00 ,  C07F7/22 ,  C07F13/00 ,  C07F15/04 ,  C07F15/06 ,  C23C16/455

CPC classification number: C23C16/18 ,  C07D487/10 ,  C07F1/005 ,  C07F3/003 ,  C07F7/2284 ,  C07F13/005 ,  C07F15/045 ,  C07F15/065 ,  C23C16/45553

Abstract: Provided is a thin-film forming raw material containing a compound represented by the following formula (1):




in the formula (1), R1 to R5 each independently represent a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a group containing a fluorine atom, M represents a metal atom, and “n” represents a valence of the metal atom represented by M, provided that at least one of R2, R3, and R4 represents the group containing a fluorine atom.

公开(公告)号：US11623935B2

公开(公告)日：2023-04-11

申请号：US17312637

申请日：2019-12-03

Applicant: ADEKA CORPORATION

Inventor： Atsushi Sakurai ,  Masako Hatase ,  Tomoharu Yoshino ,  Akihiro Nishida ,  Atsushi Yamashita

IPC: C23C16/18 ,  C23C16/455 ,  C07F7/22

Abstract: Provided is a thin-film forming raw material, which is used in an atomic layer deposition method, including an alkoxide compound represented by the following general formula (1): where R1 represents a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, R2 and R3 each independently represent an alkyl group having 1 to 5 carbon atoms, and z1 represents an integer of from 1 to 3.

公开(公告)号：US20150175642A1

公开(公告)日：2015-06-25

申请号：US14413102

申请日：2013-10-21

Applicant: ADEKA CORPORATION

Inventor： Atsushi Sakurai ,  Masako Hatase ,  Naoki Yamada ,  Tsubasa Shiratori ,  Akio Saito ,  Tomoharu Yoshino

IPC: C07F15/06 ,  C23C16/18 ,  C07F15/04 ,  C23C16/40 ,  C07F1/08 ,  C07C251/08

CPC classification number: C07F15/065 ,  C07C251/04 ,  C07C251/08 ,  C07F1/08 ,  C07F7/28 ,  C07F15/045 ,  C23C16/18 ,  C23C16/406 ,  C23C16/408

Abstract: Disclosed is a metal alkoxide compound having physical properties suitable for a material for forming thin films by CVD, and particularly, a metal alkoxide compound having physical properties suitable for a material for forming metallic-copper thin films. A metal alkoxide compound is represented by general formula (I). A thin-film-forming material including the metal alkoxide compound is described as well. (In the formula, R1 represents a methyl group or an ethyl group, R2 represents a hydrogen atom or a methyl group, R3 represents a C1-3 linear or branched alkyl group, M represents a metal atom or a silicon atom, and n represents the valence of the metal atom or silicon atom.

Abstract translation: 公开了具有适合用于通过CVD形成薄膜的材料的物理性质的金属醇盐化合物，特别是具有适用于形成金属 - 铜薄膜的材料的物理性质的金属醇盐化合物。 金属醇盐化合物由通式（I）表示。 还描述了包含金属醇盐化合物的薄膜形成材料。 （式中，R1表示甲基或乙基，R2表示氢原子或甲基，R3表示C1-3直链或支链烷基，M表示金属原子或硅原子，n表示 金属原子或硅原子的化合价。

公开(公告)号：US10351584B2

公开(公告)日：2019-07-16

申请号：US15303845

申请日：2015-03-30

Applicant: ADEKA CORPORATION

Inventor： Atsushi Sakurai ,  Masako Hatase ,  Tomoharu Yoshino ,  Masaki Enzu

IPC: C07F15/06 ,  C07C251/08 ,  C23C16/18 ,  H01L21/28 ,  H01L21/285 ,  C23C16/455

Abstract: An alkoxide compound is represented by General Formula (I) below: wherein R1 to R3 each independently represent hydrogen, a C1-12 hydrocarbon group, etc.; R4 represents a C1-12 hydrocarbon group, etc.; L represents hydrogen, halogen, a hydroxyl group, an amino group, an azi group, a phosphido group, a nitrile group, a carbonyl group, a C1-12 hydrocarbon group, etc.; and M represents a metal atom or a silicon atom, n represents an integer of 1 or more, m represents an integer of 0 or more, and n+m represents the valence of the metal atom or silicon atom.

公开(公告)号：US10167304B2

公开(公告)日：2019-01-01

申请号：US15032230

申请日：2014-11-07

Applicant: ADEKA CORPORATION

Inventor： Masako Hatase ,  Masaki Enzu ,  Atsushi Sakurai ,  Tomoharu Yoshino

IPC: C07F15/00 ,  C07C225/14 ,  C23C16/16 ,  C23C16/455

Abstract: Disclosed is a ruthenium compound useful as a precursor in chemical vapor growth, particularly ALD. The compound has good reactivity with a reactive gas, a high vapor pressure, and a low melting point. The compound is represented by general formula (I), wherein R1, R2, and R3 each independently represent a straight or branched chain alkyl group having 1 to 5 carbon atoms, provided that the total number of the carbon atoms of R1 and R2 is 3 to 10. In formula (I), R1 and R2 are each preferably ethyl or isopropyl.