公开(公告)号：AU2003288966A1

公开(公告)日：2004-06-07

申请号：AU2003288966

申请日：2003-10-29

Applicant: ADVANCED TECH MATERIALS

Inventor： XU CHONGYING ,  BAUM THOMAS H ,  KORZENSKI MICHAEL B ,  GHENCIU ELIODOR G

IPC: B08B7/00 ,  C11D7/02 ,  C11D7/10 ,  C11D7/32 ,  C11D7/50 ,  H01L21/306 ,  H01L21/311

公开(公告)号：AU2003284931A1

公开(公告)日：2004-06-07

申请号：AU2003284931

申请日：2003-10-27

Applicant: ADVANCED TECH MATERIALS

Inventor： KORZENSKI MICHAEL B ,  GHENCIU ELIODOR G ,  XU CHONGYING ,  BAUM THOMAS H

IPC: C11D7/02 ,  C11D7/10 ,  C11D7/32 ,  C11D7/50 ,  G03F7/42

Abstract: A photoresist cleaning composition for removing photoresist and ion implanted photoresist from semiconductor substrates. The cleaning composition contains supercritical CO 2 (SCCO2) and alcohol for use in removing photoresist that is not ion-implanted. When the photoresist has been subjected to ion implantation, the cleaning composition additionally contains a fluorine ion source. Such cleaning composition overcomes the intrinsic deficiency of SCCO2 as a cleaning reagent, viz., the non-polar character of SCCO2 and its associated inability to solubilize species such as inorganic salts and polar organic compounds that are present in the photoresist and that must be removed from the semiconductor substrate for efficient cleaning. The cleaning composition enables damage-free, residue-free cleaning of substrates having photoresist or ion implanted photoresist thereon.

公开(公告)号：EP1689825A4

公开(公告)日：2008-09-24

申请号：EP04812516

申请日：2004-11-30

Applicant: ADVANCED TECH MATERIALS

Inventor： KORZENSKI MICHAEL B ,  BAUM THOMAS H ,  GHENCIU ELIODOR G ,  XU CHONGYING

IPC: C09K13/00 ,  C09K13/04 ,  H01L21/302 ,  H01L21/306

CPC classification number: H01L21/02101 ,  B81C1/00476 ,  H01L21/31105 ,  H01L21/32131

Abstract: A method and composition for removing silicon-containing sacrificial layers from Micro Electro Mechanical System (MEMS) and other semiconductor substrates having such sacrificial layers is described. The etching compositions include a supercritical fluid (SCF), an etchant species, a co-solvent, and optionally a surfactant. Such etching compositions overcome the intrinsic deficiency of SCFs as cleaning reagents, viz., the non-polar character of SCFs and their associated inability to solubilize polar species that must be removed from the semiconductor substrate. The resultant etched substrates experience lower incidents of stiction relative to substrates etched using conventional wet etching techniques.

公开(公告)号：EP1765526A4

公开(公告)日：2007-11-14

申请号：EP04751653

申请日：2004-05-07

Applicant: ADVANCED TECH MATERIALS

Inventor： XU CHONGYING ,  KORZENSKI MICHAEL ,  BAUM THOMAS H ,  BOROVIK ALEXANDER ,  GHENCIU ELIODOR G

IPC: B08B3/00 ,  B08B3/02 ,  B08B3/10 ,  B08B7/00

CPC classification number: B08B7/0021

Abstract: Drying of patterned wafers is achieved in a manner effecting removal of water from the patterned wafers without collapse or deterioration of the pattern structures thereof. The drying is carried out in one aspect of the invention with a composition containing supercritical fluid, and at least one water-reactive agent that chemically reacts with water to form reaction product(s) more soluble in the supercritical fluid than water. Various methodologies are described for use of supercritical fluids to dry patterned wafers, which avoid the (low water solubility) deficiency of supercritical fluids such as supercritical CO2.

Abstract translation: 图案化晶片的干燥以实现从图案化晶片中除去水而不塌陷或其图案结构劣化的方式来实现。 在本发明的一个方面中，用含有超临界流体和至少一种水反应剂的组合物进行干燥，所述水反应剂与水化学反应形成比水更易溶于超临界流体的反应产物。 描述了使用超临界流体来干燥图案化晶片的各种方法，其避免超临界流体（例如超临界二氧化碳）的（低水溶性）缺乏。

公开(公告)号：EP1559132A4

公开(公告)日：2007-04-11

申请号：EP03781458

申请日：2003-10-29

Applicant: ADVANCED TECH MATERIALS

Inventor： KORZENSKI MICHAEL B ,  GHENCIU ELIODOR G ,  XU CHONGYING ,  BAUM THOMAS H

IPC: B08B7/00 ,  C11D7/02 ,  C11D7/10 ,  C11D7/32 ,  C11D7/50 ,  H01L21/00 ,  H01L21/306 ,  H01L21/311

CPC classification number: C11D11/0047 ,  B08B7/0021 ,  C11D7/02 ,  C11D7/10 ,  C11D7/3209 ,  C11D7/3281 ,  C11D7/5022 ,  H01L21/02063 ,  H01L21/31116

Abstract: A cleaning composition for cleaning particulate contamination from small dimensions on semiconductor substrates. The cleaning composition contains supercritical CO2 (SCCO2), alcohol, fluoride source and, optionally, hydroxyl additive. Such cleaning composition overcomes the intrinsic deficiency of SCCO2 as a cleaning reagent, viz., the non-polar character of SCCO2 and its associated inability to solubilize species such as inorganic salts and polar organic compounds that are present in particulate contamination on wafer substrates and that must be removed from the semiconductor substrate for efficient cleaning. The cleaning composition enables damage-free, residue-free cleaning of substrates having particulate contamination on Si/SiO2 substrates.

公开(公告)号：EP1572833A4

公开(公告)日：2006-03-15

申请号：EP03779251

申请日：2003-10-27

Applicant: ADVANCED TECH MATERIALS

Inventor： KORZENSKI MICHAEL B ,  GHENCIU ELIODOR G ,  XU CHONGYING ,  BAUM THOMAS H

IPC: C09K13/00 ,  C03C15/00 ,  C09K13/04 ,  C09K13/06 ,  C09K13/08 ,  C11D7/08 ,  C11D7/10 ,  C11D7/26 ,  C11D7/32 ,  C11D7/50 ,  C11D11/00 ,  H01L21/02 ,  H01L21/302 ,  H01L21/3213

CPC classification number: H01L21/02071 ,  C11D7/08 ,  C11D7/10 ,  C11D7/261 ,  C11D7/264 ,  C11D7/265 ,  C11D7/28 ,  C11D7/32 ,  C11D7/3245 ,  C11D7/50 ,  C11D7/5022 ,  C11D11/0047 ,  C23G5/00 ,  H01L21/02052 ,  H01L21/31133 ,  H01L21/32138

Abstract: A post-etch residue cleaning composition for cleaning ashed or unashed aluminum/SiN/Si post-etch residue from small dimensions on semiconductor substrates. The cleaning composition contains supercritical CO2 (SCCO2), alcohol, fluoride source, an aluminum ion complexing agent and, optionally, corrosion inhibitor. Such cleaning composition overcomes the intrinsic deficiency of SCCO2 as a cleaning reagent, viz., the non-polar character of SCCO2 and its associated inability to solubilize species such as inorganic salts and polar organic compounds that are present in the post-etch residue and that must be removed from the semiconductor substrate for efficient cleaning. The cleaning composition enables damage-free, residue-free cleaning of substrates having ashed or unashed aluminum/SiN/Si post-etch residue thereon.