公开(公告)号：WO2011028377A2

公开(公告)日：2011-03-10

申请号：PCT/US2010/045166

申请日：2010-08-11

Applicant: ASM AMERICA, INC.

Inventor： SHERO, Eric, J. ,  VERGHESE, Mohith ,  MAES, Jan, Willem

IPC: H01L21/20 ,  H01L21/316

CPC classification number: H01L21/3141 ,  C23C16/405 ,  C23C16/45527 ,  H01L21/02181 ,  H01L21/0228 ,  H01L21/31645

Abstract: Methods are provided herein for forming thin films comprising oxygen by atomic layer deposition. The thin films comprising oxygen can be deposited by providing higher concentration water pulses, a higher partial pressure of water in the reaction space, and/or a higher flow rate of water to a substrate in a reaction space. Thin films comprising oxygen can be used, for example, as dielectric oxides in transistors, capacitors, integrated circuits, and other semiconductor applications.

Abstract translation: 本文提供了通过原子层沉积形成包含氧的薄膜的方法。 包含氧的薄膜可以通过提供较高浓度的水脉冲，在反应空间中较高的水分压力和/或较高的反应空间中的基质流速来沉积。 包含氧的薄膜可以用作例如晶体管，电容器，集成电路和其它半导体应用中的电介质氧化物。

公开(公告)号：EP2044620A2

公开(公告)日：2009-04-08

申请号：EP07798325.2

申请日：2007-06-08

Applicant: ASM America, Inc.

Inventor： WANG, Chang-gong ,  SHERO, Eric, J. ,  WILK, Glen ,  MAES, Jan, Willem

IPC: H01L21/31

CPC classification number: H01L21/3141 ,  C23C16/401 ,  C23C16/405 ,  C23C16/45531 ,  C23C16/45542 ,  H01L21/28194 ,  H01L21/31612 ,  H01L21/31645

Abstract: Methods for forming metal silicate films are provided. The methods comprise contacting a substrate with alternating and sequential vapor phase pulses of a metal source chemical, a silicon source chemical and an oxidizing agent. In preferred embodiments, an alkyl amide metal compound and a silicon halide compound are used. Methods according to preferred embodiments can be used to form hafnium silicate and zirconium silicate films with substantially uniform film coverages on substrate surfaces comprising high aspect ratio features (e.g., vias and/or trenches).

Abstract translation: 提供了形成金属硅酸盐膜的方法。 所述方法包括使基底与金属源化学品，硅源化学品和氧化剂的交替和顺序的气相脉冲接触。 在优选的实施方案中，使用烷基酰胺金属化合物和卤化硅化合物。 根据优选实施方案的方法可以用于在包含高纵横比特征（例如，通孔和/或沟槽）的衬底表面上形成具有基本均匀膜覆盖率的硅酸铪硅酸盐膜和硅酸锆膜。