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    REACTION SYSTEM FOR GROWING A THIN FILM
    1.
    发明申请
    REACTION SYSTEM FOR GROWING A THIN FILM 审中-公开
    用于生成薄膜的反应体系

    公开(公告)号：WO2005042160A2

    公开(公告)日：2005-05-12

    申请号：PCT/US2004/036301

    申请日：2004-10-29

    Applicant: ASM AMERICA, INC. ,  SHERO, Eric, J. ,  MOHITH, Verghese, E.

    Inventor： SHERO, Eric, J. ,  MOHITH, Verghese, E.

    IPC: B01L

    CPC classification number: C23C16/4412 ,  C23C16/45548 ,  C23C16/45591 ,  H01L21/67017

    Abstract: A reactor defines a reaction chamber for processing a substrate. The reactor comprises a first inlet for providing a first reactant and to the reaction chamber and a second inlet for a second reactant to the reaction chamber. A first exhaust outlet removes gases from the reaction chamber. A second exhaust outlet removes gases from the reaction chamber. A flow control system is configured to alternately constrict flow through the first and second exhaust outlets. The reactor chamber is configured to for a diffusion barrier within the reaction chamber.

    Abstract translation: 反应器限定用于处理基板的反应室。 反应器包括用于提供第一反应物和反应室的第一入口和用于反应室的第二反应物的第二入口。 第一排气口从反应室中除去气体。 第二排气口从反应室中除去气体。 流量控制系统被配置为交替地收缩通过第一和第二排气出口的流动。 反应室被配置成在反应室内用于扩散阻挡层。

    METHOD AND APPARATUS FOR GROWING A THIN FILM ONTO A SUBSTRATE
    3.
    发明申请
    METHOD AND APPARATUS FOR GROWING A THIN FILM ONTO A SUBSTRATE 审中-公开
    用于将薄膜生长到基底上的方法和装置

    公开(公告)号：WO2010123666A2

    公开(公告)日：2010-10-28

    申请号：PCT/US2010/029558

    申请日：2010-04-01

    Applicant: ASM AMERICA, INC.

    Inventor： WHITE, Carl, L. ,  SHERO, Eric, J. ,  PEUSSA, Marko

    IPC: H01L21/205 ,  C23C16/455

    CPC classification number: C23C16/45527 ,  C23C16/45544 ,  C23C16/45561

    Abstract: An apparatus and method of growing a thin film onto a substrate comprises placing a substrate in a reaction chamber and subjecting the substrate to surface reactions of a plurality of vapor-phase reactants according to the ALD method. Non-fully closing valves are placed into the reactant feed conduit and backsuction conduit of an ALD system. The non-fully closed valves are operated such that one valve is open and the other valve is closed during the purge or pulse cycle of the ALD process.

    Abstract translation: 将薄膜生长到基板上的装置和方法包括将基板放置在反应室中，并使基板根据ALD方法对多个气相反应物进行表面反应。 非完全关闭阀被放置在ALD系统的反应物进料导管和反向导管中。 操作非完全关闭的阀门，使得一个阀门打开，另一个阀门在ALD过程的清洗或脉冲循环期间关闭。

    INTEGRATION OF HIGH K GATE DIELECTRIC
    4.
    发明申请
    INTEGRATION OF HIGH K GATE DIELECTRIC 审中-公开
    高K门电介质的集成

    公开(公告)号：WO2002065525A1

    公开(公告)日：2002-08-22

    申请号：PCT/US2002/004745

    申请日：2002-02-12

    Applicant: ASM AMERICA, INC.

    Inventor： POMAREDE, Christophe ,  GIVENS, Michael, E. ,  SHERO, Eric, J. ,  TODD, Michael, A.

    IPC: H01L21/28

    CPC classification number: H01L21/28194 ,  B82Y10/00 ,  C23C16/0272 ,  C30B25/02 ,  C30B29/06 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02661 ,  H01L21/28035 ,  H01L21/28044 ,  H01L21/28525 ,  H01L21/28556 ,  H01L29/4925 ,  H01L29/517 ,  H01L31/1804 ,  H01L31/182 ,  H01L31/202 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521

    Abstract: Methods are provided herein for forming electrode layers over high dielectric constant ("high k") materials. In the illustrated embodiments, a high k gate dielectric, such as zirconium oxide, is first formed (70) and then protected from reduction during a subsequent deposition (79) of silicon-containing gate electrode. In particular, a seed deposition phase (74) includes conditions designed for minimizing hydrogen reduction of the gate dielectric, including low hydrogen content, low temperatures and/or low partial pressures of the silicon source gas. Conditions are preferably altered (76) for higher deposition rates and deposition continues in a bulk phase (78). Desirably, though, hydrogen diffusion is still minimized by controlling the above-noted parameters. In one embodiment, high k dielectric reduction is minimized through omission of a hydrogen carrier gas. In another embodiment, a higher order silanes, such as disilane and trisilane, aid in reducing hydrogen content for a given deposition rate.

    Abstract translation: 本文提供了用于在高介电常数（“高k”）材料上形成电极层的方法。 在所示实施例中，首先形成高k栅极电介质，例如氧化锆，然后在随后的含硅栅电极的沉积（79）期间保护不被还原。 特别地，种子沉积阶段（74）包括设计用于最小化栅极电介质的氢还原的条件，包括硅源气体的低氢含量，低温和/或低分压。 优选改变条件（76）以获得更高的沉积速率，并且在体相中继续沉积（78）。 然而，尽管通过控制上述参数仍然使氢扩散最小化。 在一个实施例中，通过省略氢载体气体来最小化高k电介质的减小。 在另一个实施方案中，高级硅烷如乙硅烷和丙硅烷可有助于降低给定沉积速率的氢含量。

    ALD OF METAL SILICATE FILMS
    5.
    发明申请
    ALD OF METAL SILICATE FILMS 审中-公开
    金属硅酸盐膜

    公开(公告)号：WO2008011235A2

    公开(公告)日：2008-01-24

    申请号：PCT/US2007/070777

    申请日：2007-06-08

    Applicant: ASM AMERICA, INC. ,  WANG, Chang-gong ,  SHERO, Eric, J. ,  WILK, Glen ,  MAES, Jan, Willem

    Inventor： WANG, Chang-gong ,  SHERO, Eric, J. ,  WILK, Glen ,  MAES, Jan, Willem

    IPC: H01L21/31

    CPC classification number: H01L21/3141 ,  C23C16/401 ,  C23C16/405 ,  C23C16/45531 ,  C23C16/45542 ,  H01L21/28194 ,  H01L21/31612 ,  H01L21/31645

    Abstract: Methods for forming metal silicate films are provided. The methods comprise contacting a substrate with alternating and sequential vapor phase pulses of a metal source chemical, a silicon source chemical and an oxidizing agent. In preferred embodiments, an alkyl amide metal compound and a silicon halide compound are used. Methods according to preferred embodiments can be used to form hafnium silicate and zirconium silicate films with substantially uniform film coverages on substrate surfaces comprising high aspect ratio features (e.g., vias and/or trenches).

    Abstract translation: 提供了形成金属硅酸盐膜的方法。 所述方法包括使基板与金属源化学品，硅源化学品和氧化剂的交替和顺序的气相脉冲接触。 在优选的实施方案中，使用烷基酰胺金属化合物和卤化硅化合物。 根据优选实施方案的方法可以用于在包含高纵横比特征（例如，通孔和/或沟槽）的衬底表面上形成具有基本上均匀的薄膜覆盖率的硅酸铪硅酸盐膜和硅酸锆膜。

    REDUCED CROSS-CONTAMINATION BETWEEN CHAMBERS IN A SEMICONDUCTOR PROCESSING TOOL
    6.
    发明申请
    REDUCED CROSS-CONTAMINATION BETWEEN CHAMBERS IN A SEMICONDUCTOR PROCESSING TOOL 审中-公开
    半导体加工工具中的冷凝器之间的减少的交叉污染

    公开(公告)号：WO2003100836A1

    公开(公告)日：2003-12-04

    申请号：PCT/US2003/015843

    申请日：2003-05-20

    Applicant: ASM AMERICA, INC.

    Inventor： POMAREDE, Christophe ,  SHERO, Eric, J. ,  JYLIHA, Olli

    IPC: H01L21/00

    CPC classification number: H01L21/67017 ,  H01L21/67748 ,  Y10S438/908

    Abstract: In accordance with one aspect of the present invention, a method is provided for transporting a workpiece in a semiconductor processing apparatus comprising a transfer chamber, a process chamber, and a gate valve between the transfer chamber and the process chamber. The method comprises vacuum pumping the transfer chamber to achieve a first pressure in the transfer chamber and vacuum pumping the process chamber to achieve a second pressure in the process chamber. An inert gas is flowed into the transfer chamber and shut off in the process chamber. The transfer chamber is isolated from pumping, but pumping continues from the process chamber. The gate valve is opened after isolating the transfer chamber from pumping. The workpiece is then transferred between the transfer chamber and the process chamber. A definitive flow direction from transfer chamber to process chamber is thereby achieved, minimizing risk of back-diffusion.

    Abstract translation: 根据本发明的一个方面，提供了一种用于在包括传送室，处理室和闸阀的半导体处理设备中在传送室和处理室之间传输工件的方法。 该方法包括真空泵送传送室以在传送室中实现第一压力，并且真空泵送处理室以在处理室中实现第二压力。 惰性气体流入传送室并在处理室中关闭。 传送室与泵送隔离，但是从处理室继续泵送。 隔离传送室后，闸阀打开。 然后将工件在传送室和处理室之间传送。 从而实现从传送室到处理室的确定的流动方向，从而最小化反向扩散的风险。

    HIGH CONCENTRATION WATER PULSES FOR ATOMIC LAYER DEPOSITION
    7.
    发明申请
    HIGH CONCENTRATION WATER PULSES FOR ATOMIC LAYER DEPOSITION 审中-公开
    用于原子层沉积的高浓度水脉冲

    公开(公告)号：WO2011028377A2

    公开(公告)日：2011-03-10

    申请号：PCT/US2010/045166

    申请日：2010-08-11

    Applicant: ASM AMERICA, INC.

    Inventor： SHERO, Eric, J. ,  VERGHESE, Mohith ,  MAES, Jan, Willem

    IPC: H01L21/20 ,  H01L21/316

    CPC classification number: H01L21/3141 ,  C23C16/405 ,  C23C16/45527 ,  H01L21/02181 ,  H01L21/0228 ,  H01L21/31645

    Abstract: Methods are provided herein for forming thin films comprising oxygen by atomic layer deposition. The thin films comprising oxygen can be deposited by providing higher concentration water pulses, a higher partial pressure of water in the reaction space, and/or a higher flow rate of water to a substrate in a reaction space. Thin films comprising oxygen can be used, for example, as dielectric oxides in transistors, capacitors, integrated circuits, and other semiconductor applications.

    Abstract translation: 本文提供了通过原子层沉积形成包含氧的薄膜的方法。 包含氧的薄膜可以通过提供较高浓度的水脉冲，在反应空间中较高的水分压力和/或较高的反应空间中的基质流速来沉积。 包含氧的薄膜可以用作例如晶体管，电容器，集成电路和其它半导体应用中的电介质氧化物。

    REACTOR SURFACE PASSIVATION THROUGH CHEMICAL DEACTIVATION
    8.
    发明申请
    REACTOR SURFACE PASSIVATION THROUGH CHEMICAL DEACTIVATION 审中-公开
    通过化学灭活反应器表面被钝化

    公开(公告)号：WO2004102648A2

    公开(公告)日：2004-11-25

    申请号：PCT/US2004/013166

    申请日：2004-04-29

    Applicant: ASM AMERICA, INC. ,  VERGHESE, Mohith ,  SHERO, Eric, J.

    Inventor： VERGHESE, Mohith ,  SHERO, Eric, J.

    IPC: H01L21/285

    CPC classification number: B82Y30/00 ,  C23C16/403 ,  C23C16/4404 ,  C23C16/45525 ,  C23C22/68 ,  C30B25/14 ,  H01J37/32477

    Abstract: Protective layers (208) are formed on a surface (201) of an atomic layer deposition (ALD) or chemical vapor deposition (CVD) reactor (100). Parts defining a reaction space (200) for an ALD or CVD reactor (100) can be treated, in situ or ex situ, with chemicals (206) that deactivate reactive sites (210) on the reaction space surface(s) (201). A pre-treatment step (502) can maximize the available reactive sites (210) prior to the treatment step (504). With reactive sites (210) deactivated by adsorbed treatment reactant (208), during subsequent processing the reactant gases (214) have reduced reactivity or deposition upon these treated surfaces. Accordingly, purge steps (310, 314) can be greatly shortened and a greater number of runs can be conducted between cleaning steps to remove built-up deposition on the reactor walls.

    Abstract translation: 在原子层沉积（ALD）或化学气相沉积（CVD）反应器（100）的表面（201）上形成保护层（208）。 可以在原位或非原位处理限定用于ALD或CVD反应器（100）的反应空间（200）的部件与使反应空间表面（201）上的反应位点（210）失活的化学物质（206） 。 预处理步骤（502）可以在处理步骤（504）之前使可用的反应位点（210）最大化。 通过吸附处理反应物（208）使活性位点（210）失活，在随后的处理过程中，反应气体（214）在这些处理过的表面上具有降低的反应性或沉积。 因此，清洗步骤（310,314）可以大大缩短，并且可以在清洁步骤之间进行更多次的运行，以消除反应器壁上的堆积沉积物。

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