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    ALD OF METAL SILICATE FILMS
    1.
    发明申请
    ALD OF METAL SILICATE FILMS 审中-公开
    金属硅酸盐膜

    公开(公告)号：WO2008011235A2

    公开(公告)日：2008-01-24

    申请号：PCT/US2007/070777

    申请日：2007-06-08

    Applicant: ASM AMERICA, INC. ,  WANG, Chang-gong ,  SHERO, Eric, J. ,  WILK, Glen ,  MAES, Jan, Willem

    Inventor： WANG, Chang-gong ,  SHERO, Eric, J. ,  WILK, Glen ,  MAES, Jan, Willem

    IPC: H01L21/31

    CPC classification number: H01L21/3141 ,  C23C16/401 ,  C23C16/405 ,  C23C16/45531 ,  C23C16/45542 ,  H01L21/28194 ,  H01L21/31612 ,  H01L21/31645

    Abstract: Methods for forming metal silicate films are provided. The methods comprise contacting a substrate with alternating and sequential vapor phase pulses of a metal source chemical, a silicon source chemical and an oxidizing agent. In preferred embodiments, an alkyl amide metal compound and a silicon halide compound are used. Methods according to preferred embodiments can be used to form hafnium silicate and zirconium silicate films with substantially uniform film coverages on substrate surfaces comprising high aspect ratio features (e.g., vias and/or trenches).

    Abstract translation: 提供了形成金属硅酸盐膜的方法。 所述方法包括使基板与金属源化学品，硅源化学品和氧化剂的交替和顺序的气相脉冲接触。 在优选的实施方案中，使用烷基酰胺金属化合物和卤化硅化合物。 根据优选实施方案的方法可以用于在包含高纵横比特征（例如，通孔和/或沟槽）的衬底表面上形成具有基本上均匀的薄膜覆盖率的硅酸铪硅酸盐膜和硅酸锆膜。

    SULFUR-CONTAINING THIN FILMS
    2.
    发明申请
    SULFUR-CONTAINING THIN FILMS 审中-公开
    含硫薄膜

    公开(公告)号：WO2015094549A2

    公开(公告)日：2015-06-25

    申请号：PCT/US2014/066310

    申请日：2014-11-19

    Applicant: ASM IP HOLDING B.V. ,  ASM AMERICA, INC.

    Inventor： HAUKKA, Suvi, P. ,  TANG, Fu ,  GIVENS, Michael, E. ,  MAES, Jan, Willem ,  XIE, Qi

    IPC: H01L21/02

    CPC classification number: H01L21/02568 ,  C23C16/0227 ,  C23C16/305 ,  C23C16/45525 ,  H01L21/02557 ,  H01L21/0262 ,  H01L21/02661 ,  H01L21/28264

    Abstract: In some aspects, methods of forming a metal sulfide thin film are provided. According to some methods, a metal sulfide thin film is deposited on a substrate in a reaction space in a cyclical process where at least one cycle includes alternately and sequentially contacting the substrate with a first vapor-phase metal reactant and a second vapor-phase sulfur reactant. In some aspects, methods of forming a three-dimensional architecture on a substrate surface are provided. In some embodiments, the method includes forming a metal sulfide thin film on the substrate surface and forming a capping layer over the metal sulfide thin film. The substrate surface may comprise a high-mobility channel.

    Abstract translation: 在一些方面，提供了形成金属硫化物薄膜的方法。 根据一些方法，金属硫化物薄膜以循环方法沉积在反应空间中的基底上，其中至少一个循环包括交替地且顺序地使基底与第一气相金属反应物和第二气相硫 反应物。 在一些方面中，提供了在衬底表面上形成三维结构的方法。 在一些实施例中，该方法包括在基板表面上形成金属硫化物薄膜并在金属硫化物薄膜上形成覆盖层。 衬底表面可以包括高迁移率通道。

    METHOD OF FORMING A DIRECTED SELF-ASSEMBLED LAYER ON A SUBSTRATE
    5.
    发明申请
    METHOD OF FORMING A DIRECTED SELF-ASSEMBLED LAYER ON A SUBSTRATE 审中-公开
    在衬底上形成直接自组装层的方法

    公开(公告)号：WO2017184357A1

    公开(公告)日：2017-10-26

    申请号：PCT/US2017/026518

    申请日：2017-04-07

    Applicant: ASM IP HOLDING B.V. ,  IMEC VZW ,  ASM AMERICA, INC.

    Inventor： KNAEPEN, Werner ,  MAES, Jan, Willem ,  STOKHOF, Maarten ,  GRONHEID, Roel ,  SRIRAMAN, Hari, Pathangi

    IPC: H01L21/027 ,  H01L21/768

    Abstract: A method of forming a directed self-assembled (DSA) layer on a substrate by: providing a substrate; applying a layer comprising a self-assembly material on the substrate; and annealing of the self-assembly material of the layer to form a directed self-assembled layer by providing a controlled temperature and gas environment around the substrate. The controlled gas environment comprises molecules comprising an oxygen element with a partial pressure between 10 - 2000 Pa.

    Abstract translation: 通过以下步骤在衬底上形成定向自组装（DSA）层的方法：提供衬底; 在衬底上施加包含自组装材料的层; 以及通过在衬底周围提供受控的温度和气体环境来退火该层的自组装材料以形成定向的自组装层。 受控的气体环境包含分子，该分子包含分压在10-2000Pa之间的氧元素

    HIGH CONCENTRATION WATER PULSES FOR ATOMIC LAYER DEPOSITION
    7.
    发明申请
    HIGH CONCENTRATION WATER PULSES FOR ATOMIC LAYER DEPOSITION 审中-公开
    用于原子层沉积的高浓度水脉冲

    公开(公告)号：WO2011028377A2

    公开(公告)日：2011-03-10

    申请号：PCT/US2010/045166

    申请日：2010-08-11

    Applicant: ASM AMERICA, INC.

    Inventor： SHERO, Eric, J. ,  VERGHESE, Mohith ,  MAES, Jan, Willem

    IPC: H01L21/20 ,  H01L21/316

    CPC classification number: H01L21/3141 ,  C23C16/405 ,  C23C16/45527 ,  H01L21/02181 ,  H01L21/0228 ,  H01L21/31645

    Abstract: Methods are provided herein for forming thin films comprising oxygen by atomic layer deposition. The thin films comprising oxygen can be deposited by providing higher concentration water pulses, a higher partial pressure of water in the reaction space, and/or a higher flow rate of water to a substrate in a reaction space. Thin films comprising oxygen can be used, for example, as dielectric oxides in transistors, capacitors, integrated circuits, and other semiconductor applications.

    Abstract translation: 本文提供了通过原子层沉积形成包含氧的薄膜的方法。 包含氧的薄膜可以通过提供较高浓度的水脉冲，在反应空间中较高的水分压力和/或较高的反应空间中的基质流速来沉积。 包含氧的薄膜可以用作例如晶体管，电容器，集成电路和其它半导体应用中的电介质氧化物。

    ALD OF METAL SILICATE FILMS
    8.
    发明公开
    ALD OF METAL SILICATE FILMS 审中-公开
    ALD VON METALLSILIKATFILMEN

    公开(公告)号：EP2044620A2

    公开(公告)日：2009-04-08

    申请号：EP07798325.2

    申请日：2007-06-08

    Applicant: ASM America, Inc.

    Inventor： WANG, Chang-gong ,  SHERO, Eric, J. ,  WILK, Glen ,  MAES, Jan, Willem

    IPC: H01L21/31

    CPC classification number: H01L21/3141 ,  C23C16/401 ,  C23C16/405 ,  C23C16/45531 ,  C23C16/45542 ,  H01L21/28194 ,  H01L21/31612 ,  H01L21/31645

    Abstract: Methods for forming metal silicate films are provided. The methods comprise contacting a substrate with alternating and sequential vapor phase pulses of a metal source chemical, a silicon source chemical and an oxidizing agent. In preferred embodiments, an alkyl amide metal compound and a silicon halide compound are used. Methods according to preferred embodiments can be used to form hafnium silicate and zirconium silicate films with substantially uniform film coverages on substrate surfaces comprising high aspect ratio features (e.g., vias and/or trenches).

    Abstract translation: 提供了形成金属硅酸盐膜的方法。 所述方法包括使基底与金属源化学品，硅源化学品和氧化剂的交替和顺序的气相脉冲接触。 在优选的实施方案中，使用烷基酰胺金属化合物和卤化硅化合物。 根据优选实施方案的方法可以用于在包含高纵横比特征（例如，通孔和/或沟槽）的衬底表面上形成具有基本均匀膜覆盖率的硅酸铪硅酸盐膜和硅酸锆膜。

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