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    REACTIVE SITE DEACTIVATION AGAINST VAPOR DEPOSITION
    1.
    发明申请
    REACTIVE SITE DEACTIVATION AGAINST VAPOR DEPOSITION 审中-公开
    对蒸汽沉积的反应场地去除

    公开(公告)号：WO2011103062A2

    公开(公告)日：2011-08-25

    申请号：PCT/US2011/024762

    申请日：2011-02-14

    Applicant: ASM AMERICA, INC.

    Inventor： SHERO, Eric ,  VERGHESE, Mohith ,  MUSCAT, Anthony ,  MILLER, Shawn

    IPC: H01L21/316 ,  H01L21/205

    CPC classification number: C23C16/45525 ,  B05D1/32 ,  B05D1/60 ,  B05D5/08 ,  B82Y30/00 ,  C23C16/04 ,  H01L21/02181 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/28194 ,  H01L29/517

    Abstract: Methods and structures relating to the formation of mixed SAMs for preventing undesirable growth or nucleation on exposed surfaces inside a reactor are described. A mixed SAM (322) can be formed on surfaces (308) for which nucleation is not desired by introducing a first SAM precursor having molecules of a first length (334) and a second SAM precursor having molecules of a second length (338) shorter than the first. Examples of exposed surfaces for which a mixed SAM (322) can be provided over include reactor surfaces and select surfaces of integrated circuit structures (800), such as insulator and dielectric layers.

    Abstract translation: 描述了与形成用于防止反应器内的暴露表面上的不期望的生长或成核的混合SAM相关的方法和结构。 可以通过引入具有第一长度（334）的分子的第一SAM前体和具有第二长度（338）的分子的第二SAM前体，在表面（308）上形成混合的SAM（322） 比第一个。 可以提供混合SAM（322）的暴露表面的实例包括反应器表面和诸如绝缘体和电介质层的集成电路结构（800）的选择表面。

    HIGH CONCENTRATION WATER PULSES FOR ATOMIC LAYER DEPOSITION
    2.
    发明申请
    HIGH CONCENTRATION WATER PULSES FOR ATOMIC LAYER DEPOSITION 审中-公开
    用于原子层沉积的高浓度水脉冲

    公开(公告)号：WO2011028377A2

    公开(公告)日：2011-03-10

    申请号：PCT/US2010/045166

    申请日：2010-08-11

    Applicant: ASM AMERICA, INC.

    Inventor： SHERO, Eric, J. ,  VERGHESE, Mohith ,  MAES, Jan, Willem

    IPC: H01L21/20 ,  H01L21/316

    CPC classification number: H01L21/3141 ,  C23C16/405 ,  C23C16/45527 ,  H01L21/02181 ,  H01L21/0228 ,  H01L21/31645

    Abstract: Methods are provided herein for forming thin films comprising oxygen by atomic layer deposition. The thin films comprising oxygen can be deposited by providing higher concentration water pulses, a higher partial pressure of water in the reaction space, and/or a higher flow rate of water to a substrate in a reaction space. Thin films comprising oxygen can be used, for example, as dielectric oxides in transistors, capacitors, integrated circuits, and other semiconductor applications.

    Abstract translation: 本文提供了通过原子层沉积形成包含氧的薄膜的方法。 包含氧的薄膜可以通过提供较高浓度的水脉冲，在反应空间中较高的水分压力和/或较高的反应空间中的基质流速来沉积。 包含氧的薄膜可以用作例如晶体管，电容器，集成电路和其它半导体应用中的电介质氧化物。

    REACTOR SURFACE PASSIVATION THROUGH CHEMICAL DEACTIVATION
    3.
    发明申请
    REACTOR SURFACE PASSIVATION THROUGH CHEMICAL DEACTIVATION 审中-公开
    通过化学灭活反应器表面被钝化

    公开(公告)号：WO2004102648A2

    公开(公告)日：2004-11-25

    申请号：PCT/US2004/013166

    申请日：2004-04-29

    Applicant: ASM AMERICA, INC. ,  VERGHESE, Mohith ,  SHERO, Eric, J.

    Inventor： VERGHESE, Mohith ,  SHERO, Eric, J.

    IPC: H01L21/285

    CPC classification number: B82Y30/00 ,  C23C16/403 ,  C23C16/4404 ,  C23C16/45525 ,  C23C22/68 ,  C30B25/14 ,  H01J37/32477

    Abstract: Protective layers (208) are formed on a surface (201) of an atomic layer deposition (ALD) or chemical vapor deposition (CVD) reactor (100). Parts defining a reaction space (200) for an ALD or CVD reactor (100) can be treated, in situ or ex situ, with chemicals (206) that deactivate reactive sites (210) on the reaction space surface(s) (201). A pre-treatment step (502) can maximize the available reactive sites (210) prior to the treatment step (504). With reactive sites (210) deactivated by adsorbed treatment reactant (208), during subsequent processing the reactant gases (214) have reduced reactivity or deposition upon these treated surfaces. Accordingly, purge steps (310, 314) can be greatly shortened and a greater number of runs can be conducted between cleaning steps to remove built-up deposition on the reactor walls.

    Abstract translation: 在原子层沉积（ALD）或化学气相沉积（CVD）反应器（100）的表面（201）上形成保护层（208）。 可以在原位或非原位处理限定用于ALD或CVD反应器（100）的反应空间（200）的部件与使反应空间表面（201）上的反应位点（210）失活的化学物质（206） 。 预处理步骤（502）可以在处理步骤（504）之前使可用的反应位点（210）最大化。 通过吸附处理反应物（208）使活性位点（210）失活，在随后的处理过程中，反应气体（214）在这些处理过的表面上具有降低的反应性或沉积。 因此，清洗步骤（310,314）可以大大缩短，并且可以在清洁步骤之间进行更多次的运行，以消除反应器壁上的堆积沉积物。

    SEMICONDUCTOR PROCESSING REACTOR AND COMPONENTS THEREOF
    4.
    发明申请
    SEMICONDUCTOR PROCESSING REACTOR AND COMPONENTS THEREOF 审中-公开

    公开(公告)号：WO2010118051A3

    公开(公告)日：2010-10-14

    申请号：PCT/US2010/030126

    申请日：2010-04-06

    Applicant: ASM AMERICA, INC. ,  SHERO, Eric ,  VERGHESE, Mohith ,  WHITE, Carl ,  TERHORST, Herbert ,  MAURICE, Dan

    Inventor： SHERO, Eric ,  VERGHESE, Mohith ,  WHITE, Carl ,  TERHORST, Herbert ,  MAURICE, Dan

    IPC: C23C16/455

    Abstract: A reactor having a housing that encloses a gas delivery system (14) operatively connected to a reaction chamber (16) and an exhaust assembly (18). The gas delivery system includes a plurality of gas lines for providing at least one process gas to the reaction chamber. The gas delivery system further includes a mixer (20) for receiving the at least one process gas. The mixer is operatively connected to a diffuser (22) that is configured to diffuse process gases. The diffuser is attached directly to an upper surface (24) of the reaction chamber, thereby forming a diffuser volume therebetween. The diffuser includes at least one distribution surface that is configured to provide a flow restriction to the process gases as they pass through the diffuser volume before being introduced into the reaction chamber. The reaction chamber defines a reaction space in which a semiconductor substrate is disposed for processing. The exhaust assembly is operatively connected to the reaction chamber for withdrawing unreacted process gases and effluent from the reaction space.

    REACTOR SURFACE PASSIVATION THROUGH CHEMICAL DEACTIVATION
    7.
    发明公开
    REACTOR SURFACE PASSIVATION THROUGH CHEMICAL DEACTIVATION 审中-公开
    反应器表面通过化学钝化失效

    公开(公告)号：EP1623454A2

    公开(公告)日：2006-02-08

    申请号：EP04750869.2

    申请日：2004-04-29

    Applicant: ASM America, Inc.

    Inventor： VERGHESE, Mohith ,  SHERO, Eric, J.

    IPC: H01L21/285 ,  C23C16/44 ,  C30B25/00

    CPC classification number: B82Y30/00 ,  C23C16/403 ,  C23C16/4404 ,  C23C16/45525 ,  C23C22/68 ,  C30B25/14 ,  H01J37/32477

    Abstract: Protective layers (208) are formed on a surface (201) of an atomic layer deposition (ALD) or chemical vapor deposition (CVD) reactor (100). Parts defining a reaction space (200) for an ALD or CVD reactor (100) can be treated, in situ or ex situ, with chemicals (206) that deactivate reactive sites (210) on the reaction space surface(s) (201). A pre-treatment step (502) can maximize the available reactive sites (210) prior to the treatment step (504). With reactive sites (210) deactivated by adsorbed treatment reactant (208), during subsequent processing the reactant gases (214) have reduced reactivity or deposition upon these treated surfaces. Accordingly, purge steps (310, 314) can be greatly shortened and a greater number of runs can be conducted between cleaning steps to remove built-up deposition on the reactor walls.

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