公开(公告)号：US20240063014A1

公开(公告)日：2024-02-22

申请号：US18232990

申请日：2023-08-11

Applicant: ASM IP Holding B.V.

Inventor： SangHeon Yong ,  HongSuk Kim ,  JuHyuk Park ,  SungHa Choi ,  KiHun Kim

IPC: H01L21/02

CPC classification number: H01L21/02252 ,  H01L21/0217 ,  H01L21/02164 ,  H01L21/02219 ,  H01L21/02211 ,  H01L21/0223 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/02326

Abstract: Provided is a method of efficiently forming a dense and solid silicon oxide film on a substrate and a method of manufacturing a semiconductor device by using the same. The formation method comprises: providing a substrate to a reaction chamber; forming a flowable silicon nitride film on the substrate; converting the flowable silicon nitride film into a flowable silicon oxide film; densifying the flowable silicon oxide film; and post-treating the densified silicon oxide film with an inert gas plasma to increase a density of the silicon oxide film.