公开(公告)号：US20240047199A1

公开(公告)日：2024-02-08

申请号：US18228122

申请日：2023-07-31

Applicant: ASM IP Holding B.V.

Inventor： SungHa Choi ,  HongSuk Kim ,  SangHeon Yong ,  JuHyuk Park ,  KiHun Kim

IPC: H01L21/02 ,  H01J37/32

CPC classification number: H01L21/0234 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32165 ,  H01L21/0217 ,  H01L21/02164 ,  H01L21/02219 ,  H01J2237/332

Abstract: A method of processing a substrate having a gap includes loading the substrate onto a substrate support unit, supplying an oligomeric silicon precursor and a nitrogen-containing gas onto the substrate on the substrate support unit through a gas supply unit, and generating plasma directly in a reaction space by applying a voltage to at least one of the substrate support unit and the gas supply unit, wherein a plurality of sub-steps are performed during the supplying of the oligomeric silicon precursor, the nitrogen-containing gas and the generating a direct plasma, wherein different process parameters are applied during the plurality of sub-steps.

公开(公告)号：US20250054753A1

公开(公告)日：2025-02-13

申请号：US18795432

申请日：2024-08-06

Applicant: ASM IP Holding B.V.

Inventor： KiHun Kim ,  SangHeon Yong ,  Sungha Choi ,  JuHyuk Park ,  Jihye Yang ,  Jaewoo Jeong ,  Shinya Yoshimoto ,  Makoto Igarashi

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/505 ,  C23C16/56

Abstract: Provided is a method of filling a gap with a flowable oxide film. In one embodiment of the disclosure, the method comprises forming a flowable silicon nitride film, followed by converting the silicon nitride film in a silicon oxide film. The silicon nitride film may be formed by supplying an oligomeric silicon source and a nitrogen source activated by a power. The silicon nitride film may be converted into the silicon oxide film by supplying an oxygen source while applying a vacuum UV radiation. The vacuum UV radiation may be applied in a pulsed mode.

公开(公告)号：US20240258101A1

公开(公告)日：2024-08-01

申请号：US18199092

申请日：2023-05-18

Applicant: ASM IP Holding B.V.

Inventor： Jihye Yang ,  Hongsuk Kim ,  JuHyuk Park ,  SungHa Choi ,  SangHeon Yong ,  KiHun Kim

IPC: H01L21/02 ,  H01L23/14

CPC classification number: H01L21/02236 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02359 ,  H01L23/14

Abstract: Disclosed is a substrate processing method comprising providing a substrate having a gap in a surface thereof into a reaction space, partially filling each of the plurality of gaps with a flowable silicon nitride film, forming a silicon oxide film partially filled in the gap by converting the silicon nitride film into the silicon oxide film, fully filling the gap, which is partially filled with the silicon oxide film, with a silicon nitride film, and forming a silicon oxide film to be fully filled in the gap, by converting the silicon nitride film into the silicon oxide film.

公开(公告)号：US20240071748A1

公开(公告)日：2024-02-29

申请号：US18238063

申请日：2023-08-25

Applicant: ASM IP Holding B.V.

Inventor： SangHeon Yong ,  HongSuk Kim ,  SungHa Choi ,  JuHyuk Park ,  KiHun Kim ,  JiHye Yang

IPC: H01L21/02 ,  H01J37/32

CPC classification number: H01L21/02274 ,  H01J37/32146 ,  H01J37/32449 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02211 ,  H01J2237/3321 ,  H01J2237/3323

Abstract: A substrate processing method includes providing, in a reaction space, a substrate including two gaps in a surface thereof, and filling the at least two gaps with a flowable film under a pulsed plasma atmosphere, while supplying a precursor and a reactant gas to the reaction space, wherein a difference of filling heights of the flowable film filled in the at least two gaps, between the at least two gaps, is reduced by adjusting a pulse frequency of pulsed plasma.

公开(公告)号：US20240071749A1

公开(公告)日：2024-02-29

申请号：US18236504

申请日：2023-08-22

Applicant: ASM IP Holding B.V.

Inventor： SangHeon Yong ,  HongSuk Kim ,  SungHa Choi ,  JuHyuk Park ,  KiHun Kim

IPC: H01L21/02 ,  C23C16/04 ,  C23C16/34 ,  C23C16/505

CPC classification number: H01L21/0228 ,  C23C16/045 ,  C23C16/345 ,  C23C16/505 ,  H01L21/0217 ,  H01L21/02211

Abstract: A method of processing a substrate is disclosed, the method including: providing a substrate to a reaction space, the substrate having at least two gaps on a surface of the substrate, and depositing a flowable film in the at least two gaps while supplying a precursor and a reactant gas into the reaction space, wherein the depositing is discontinuously performed while a pumping operation for the reaction space is continuously maintained.

公开(公告)号：US20230335399A1

公开(公告)日：2023-10-19

申请号：US18132547

申请日：2023-04-10

Applicant: ASM IP Holding B.V.

Inventor： SangHeon Yong ,  HongSuk Kim ,  JuHyuk Park ,  KiHun Kim ,  SungHa Choi

IPC: H01L21/02 ,  H01L21/56

CPC classification number: H01L21/0234 ,  H01L21/56 ,  H01L21/0217 ,  H01L21/02219 ,  H01L21/02274

Abstract: A substrate processing method comprising a gap-fill process is disclosed. The method includes providing a substrate in which a gap is formed in a surface thereof to a reaction space, supplying an oligomeric silicon precursor and a nitrogen-containing gas to the reaction space, forming a silicon nitride film having flowability on the substrate to fill at least a portion of the gap of the substrate while maintaining the reaction space in a plasma state, and densifying the silicon nitride film.

公开(公告)号：US20250125142A1

公开(公告)日：2025-04-17

申请号：US18991851

申请日：2024-12-23

Applicant: ASM IP Holding B.V.

Inventor： SangHeon Yong ,  Makoto Igarashi ,  JuHyuk Park ,  KiHun Kim ,  Jihye Yang ,  Sungha Choi ,  Jaewoo Jeong ,  Shinya Yoshimoto

IPC: H01L21/02

Abstract: Provided is a method of filling a gap with a flowable oxide film. In one embodiment of the disclosure, the method comprises forming a flowable silicon nitride film, followed by converting the silicon nitride film in a silicon oxide film. The silicon nitride film may be formed by supplying an oligomeric silicon source and a nitrogen source activated by a power. The silicon nitride film may be converted into the silicon oxide film by supplying an oxygen source while applying a Vacuum UV radiation. The Vacuum UV radiation may be applied in a pulsed mode.

公开(公告)号：US20240258102A1

公开(公告)日：2024-08-01

申请号：US18199018

申请日：2023-05-18

Applicant: ASM IP Holding B.V.

Inventor： Jihye Yang ,  Hongsuk Kim ,  JuHyuk Park ,  SungHa Choi ,  SangHeon Yong ,  KiHun Kim

IPC: H01L21/02

CPC classification number: H01L21/02274 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02219 ,  H01L21/0223 ,  H01L21/02252

Abstract: A substrate processing method includes providing a substrate having a gap structure into a reaction space, and supplying a silicon precursor and nitrogen reactant gas into the reaction space, and depositing a flowable silicon nitride film on the substrate to fill at least a part of the gap of the substrate, while maintaining an inside of the reaction space in a plasma state by applying radio frequency (RF) power in a pulsed mode, wherein as a duty ratio of the RF power decreases, fewer micropores are generated in the silicon nitride film in the gap.

公开(公告)号：US20240071747A1

公开(公告)日：2024-02-29

申请号：US18238020

申请日：2023-08-25

Applicant: ASM IP Holding B.V.

Inventor： SungHa Choi ,  Hongsuk Kim ,  KiHun Kim ,  SangHeon Yong ,  JuHyuk Park

IPC: H01L21/02

CPC classification number: H01L21/02274 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/0228 ,  C23C16/045

Abstract: A method of processing a substrate having a gap includes loading the substrate onto a substrate support unit, supplying an oligomeric silicon precursor and a nitrogen-containing gas to the substrate through a gas supply unit on the substrate support unit, and generating a direct plasma in a reaction space by applying a voltage to at least one of the substrate support unit and the gas supply unit, wherein a plurality of sub-steps are performed during the supplying of the oligomeric silicon precursor and the nitrogen-containing gas and the generating a direct plasma, and different plasma duty ratios are applied during the plurality of sub-steps.

公开(公告)号：US20240063053A1

公开(公告)日：2024-02-22

申请号：US18235013

申请日：2023-08-17

Applicant: ASM IP Holding B.V.

Inventor： SangHeon Yong ,  HongSuk Kim ,  SungHa Choi ,  JuHyuk Park ,  KiHun Kim

IPC: H01L21/764 ,  H01J37/32 ,  H01L21/762 ,  H01L21/02 ,  C23C16/34 ,  C23C16/505 ,  C23C16/04

CPC classification number: H01L21/764 ,  H01J37/32137 ,  H01L21/76224 ,  H01L21/02274 ,  C23C16/345 ,  C23C16/505 ,  C23C16/045 ,  H01J2237/332

Abstract: A method of processing a substrate is disclosed, the method including: providing the substrate where a gap is formed on a surface thereof to a reaction space, performing a deposition step of depositing a flowable film in the gap of the substrate while supplying a precursor and a reactant gas to the reaction space, performing a plasma treatment step to the flowable film so that the flowability of the flowable film in an upper region of the gap decreases compared to a lower region of the gap, and repeating the deposition step of depositing the flowable film and the plasma treatment step to the flowable film, to form an air-gap within the gap.