公开(公告)号：US20250054753A1

公开(公告)日：2025-02-13

申请号：US18795432

申请日：2024-08-06

Applicant: ASM IP Holding B.V.

Inventor： KiHun Kim ,  SangHeon Yong ,  Sungha Choi ,  JuHyuk Park ,  Jihye Yang ,  Jaewoo Jeong ,  Shinya Yoshimoto ,  Makoto Igarashi

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/505 ,  C23C16/56

Abstract: Provided is a method of filling a gap with a flowable oxide film. In one embodiment of the disclosure, the method comprises forming a flowable silicon nitride film, followed by converting the silicon nitride film in a silicon oxide film. The silicon nitride film may be formed by supplying an oligomeric silicon source and a nitrogen source activated by a power. The silicon nitride film may be converted into the silicon oxide film by supplying an oxygen source while applying a vacuum UV radiation. The vacuum UV radiation may be applied in a pulsed mode.

公开(公告)号：US20240071749A1

公开(公告)日：2024-02-29

申请号：US18236504

申请日：2023-08-22

Applicant: ASM IP Holding B.V.

Inventor： SangHeon Yong ,  HongSuk Kim ,  SungHa Choi ,  JuHyuk Park ,  KiHun Kim

IPC: H01L21/02 ,  C23C16/04 ,  C23C16/34 ,  C23C16/505

CPC classification number: H01L21/0228 ,  C23C16/045 ,  C23C16/345 ,  C23C16/505 ,  H01L21/0217 ,  H01L21/02211

Abstract: A method of processing a substrate is disclosed, the method including: providing a substrate to a reaction space, the substrate having at least two gaps on a surface of the substrate, and depositing a flowable film in the at least two gaps while supplying a precursor and a reactant gas into the reaction space, wherein the depositing is discontinuously performed while a pumping operation for the reaction space is continuously maintained.

公开(公告)号：US20230335399A1

公开(公告)日：2023-10-19

申请号：US18132547

申请日：2023-04-10

Applicant: ASM IP Holding B.V.

Inventor： SangHeon Yong ,  HongSuk Kim ,  JuHyuk Park ,  KiHun Kim ,  SungHa Choi

IPC: H01L21/02 ,  H01L21/56

CPC classification number: H01L21/0234 ,  H01L21/56 ,  H01L21/0217 ,  H01L21/02219 ,  H01L21/02274

Abstract: A substrate processing method comprising a gap-fill process is disclosed. The method includes providing a substrate in which a gap is formed in a surface thereof to a reaction space, supplying an oligomeric silicon precursor and a nitrogen-containing gas to the reaction space, forming a silicon nitride film having flowability on the substrate to fill at least a portion of the gap of the substrate while maintaining the reaction space in a plasma state, and densifying the silicon nitride film.

公开(公告)号：US20250038048A1

公开(公告)日：2025-01-30

申请号：US18912027

申请日：2024-10-10

Applicant: ASM IP Holding B.V.

Inventor： Hyunchul Kim ,  SeungWoo Choi ,  WooSik Shin ,  KiHun Kim ,  YeaHyun Gu

IPC: H01L21/768 ,  H01J37/32

Abstract: A substrate processing method capable of filling a gap structure without forming voids or seams in a gap while minimizing damage to the gap structure includes: forming a first thin film on a structure by performing a first cycle a plurality of times, the first cycle including supplying a first reaction gas onto the structure including a gap and purging a residue, forming a second thin film by changing a chemical composition of the first thin film, and forming a third thin film having the same component as that of the second thin film on the second thin film while filling the gap.

公开(公告)号：US20240145236A1

公开(公告)日：2024-05-02

申请号：US18383109

申请日：2023-10-24

Applicant: ASM IP Holding B.V.

Inventor： Hyunchul Kim ,  Ryu Nakano ,  KiHun Kim ,  Rin Ha

IPC: H01L21/02 ,  C23C16/04 ,  C23C16/40 ,  C23C16/455

CPC classification number: H01L21/0228 ,  C23C16/045 ,  C23C16/402 ,  C23C16/45536 ,  H01L21/02164 ,  H01L21/02274

Abstract: Provided is a method for improving the inhibiting characteristics in the upper portion of the gap. In one embodiment of the disclosure, a first inhibitor and a second inhibitor are supplied, therefore more inhibiting radicals may be generated and remove more reaction activation sites from the upper portion of the gap and improve the inhibiting characteristics in the upper portion compared to in the lower portion. The substrate processing method of the disclosure may facilitate further filling the gap with negative slope and complex structure.

公开(公告)号：US20240047199A1

公开(公告)日：2024-02-08

申请号：US18228122

申请日：2023-07-31

Applicant: ASM IP Holding B.V.

Inventor： SungHa Choi ,  HongSuk Kim ,  SangHeon Yong ,  JuHyuk Park ,  KiHun Kim

IPC: H01L21/02 ,  H01J37/32

CPC classification number: H01L21/0234 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32165 ,  H01L21/0217 ,  H01L21/02164 ,  H01L21/02219 ,  H01J2237/332

Abstract: A method of processing a substrate having a gap includes loading the substrate onto a substrate support unit, supplying an oligomeric silicon precursor and a nitrogen-containing gas onto the substrate on the substrate support unit through a gas supply unit, and generating plasma directly in a reaction space by applying a voltage to at least one of the substrate support unit and the gas supply unit, wherein a plurality of sub-steps are performed during the supplying of the oligomeric silicon precursor, the nitrogen-containing gas and the generating a direct plasma, wherein different process parameters are applied during the plurality of sub-steps.

公开(公告)号：US12154824B2

公开(公告)日：2024-11-26

申请号：US17399049

申请日：2021-08-11

Applicant: ASM IP Holding B.V.

Inventor： Hyunchul Kim ,  SeungWoo Choi ,  WooSik Shin ,  KiHun Kim ,  YeaHyun Gu

IPC: H01L21/768 ,  H01J37/32

Abstract: A substrate processing method capable of filling a gap structure without forming voids or seams in a gap while minimizing damage to the gap structure includes: forming a first thin film on a structure by performing a first cycle a plurality of times, the first cycle including supplying a first reaction gas onto the structure including a gap and purging a residue, forming a second thin film by changing a chemical composition of the first thin film, and forming a third thin film having the same component as that of the second thin film on the second thin film while filling the gap.

公开(公告)号：US20240258101A1

公开(公告)日：2024-08-01

申请号：US18199092

申请日：2023-05-18

Applicant: ASM IP Holding B.V.

Inventor： Jihye Yang ,  Hongsuk Kim ,  JuHyuk Park ,  SungHa Choi ,  SangHeon Yong ,  KiHun Kim

IPC: H01L21/02 ,  H01L23/14

CPC classification number: H01L21/02236 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02359 ,  H01L23/14

Abstract: Disclosed is a substrate processing method comprising providing a substrate having a gap in a surface thereof into a reaction space, partially filling each of the plurality of gaps with a flowable silicon nitride film, forming a silicon oxide film partially filled in the gap by converting the silicon nitride film into the silicon oxide film, fully filling the gap, which is partially filled with the silicon oxide film, with a silicon nitride film, and forming a silicon oxide film to be fully filled in the gap, by converting the silicon nitride film into the silicon oxide film.

公开(公告)号：US20240071748A1

公开(公告)日：2024-02-29

申请号：US18238063

申请日：2023-08-25

Applicant: ASM IP Holding B.V.

Inventor： SangHeon Yong ,  HongSuk Kim ,  SungHa Choi ,  JuHyuk Park ,  KiHun Kim ,  JiHye Yang

IPC: H01L21/02 ,  H01J37/32

CPC classification number: H01L21/02274 ,  H01J37/32146 ,  H01J37/32449 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02211 ,  H01J2237/3321 ,  H01J2237/3323

Abstract: A substrate processing method includes providing, in a reaction space, a substrate including two gaps in a surface thereof, and filling the at least two gaps with a flowable film under a pulsed plasma atmosphere, while supplying a precursor and a reactant gas to the reaction space, wherein a difference of filling heights of the flowable film filled in the at least two gaps, between the at least two gaps, is reduced by adjusting a pulse frequency of pulsed plasma.

公开(公告)号：US20250125142A1

公开(公告)日：2025-04-17

申请号：US18991851

申请日：2024-12-23

Applicant: ASM IP Holding B.V.

Inventor： SangHeon Yong ,  Makoto Igarashi ,  JuHyuk Park ,  KiHun Kim ,  Jihye Yang ,  Sungha Choi ,  Jaewoo Jeong ,  Shinya Yoshimoto

IPC: H01L21/02

Abstract: Provided is a method of filling a gap with a flowable oxide film. In one embodiment of the disclosure, the method comprises forming a flowable silicon nitride film, followed by converting the silicon nitride film in a silicon oxide film. The silicon nitride film may be formed by supplying an oligomeric silicon source and a nitrogen source activated by a power. The silicon nitride film may be converted into the silicon oxide film by supplying an oxygen source while applying a Vacuum UV radiation. The Vacuum UV radiation may be applied in a pulsed mode.