公开(公告)号：US20240021404A1

公开(公告)日：2024-01-18

申请号：US18256865

申请日：2021-11-17

Applicant: ASML Netherlands B.V.

Inventor： Weiming REN ,  Xuedong LIU ,  Shahedul HOQUE ,  Xiaoyu JI ,  Hermanus Adrianus DILLEN

IPC: H01J37/147

CPC classification number: H01J37/1478 ,  H01J37/1477 ,  H01J2237/1507 ,  H01J37/28

Abstract: Systems and methods of imaging a sample using a tilted charged-particle beam. The apparatus may comprise a first deflector located between the charged-particle source and an objective lens and configured to deflect the charged-particle beam away from the primary optical axis; a second deflector located substantially at a focal plane of the objective lens and configured to deflect the charged-particle beam back towards the primary optical axis; and a third deflector located substantially at a principal plane of the objective lens, wherein the third deflector is configured to shift a wobbling center of the objective lens to an off-axis wobbling location, and wherein the first and the second deflectors are configured to deflect the charged-particle beam to pass through the off-axis wobbling location to land on a surface of a sample at a first landing location and having a beam-tilt angle.

公开(公告)号：US20240004309A1

公开(公告)日：2024-01-04

申请号：US18039712

申请日：2021-12-06

Applicant: ASML NETHERLANDS B.V.

Inventor： Hendrik Adriaan VAN LAARHOVEN ,  Alok VERMA ,  Roy ANUNCIADO ,  Hermanus Adrianus DILLEN ,  Stefan Cornelis Theodorus VAN DER SANDEN

IPC: G03F7/00 ,  H01L21/66

CPC classification number: G03F7/70625 ,  G03F7/70633 ,  H01L22/12 ,  H01L22/20

Abstract: A method of monitoring a semiconductor manufacturing process. The method includes obtaining at least one first trained model being operable to derive local performance parameter data from high resolution metrology data, wherein the local performance parameter data describes a local component, or one or more local contributors thereto, of a performance metric and high resolution metrology data relating to at least one substrate having been subject to at least a part of the semiconductor manufacturing process. Local performance parameter data is determined from the high resolution metrology data using the first trained model. The first trained model is operable to determine the local performance parameter data as if it had been subject to an etch step on at least the immediately prior exposed layer, based on the high resolution metrology data including only metrology data performed prior to any such etch step.

公开(公告)号：US20230333485A1

公开(公告)日：2023-10-19

申请号：US18025183

申请日：2021-09-27

Applicant: ASML NETHERLANDS B.V.

Inventor： Wim Tjibbo TEL ,  Hermanus Adrianus DILLEN ,  Roy WERKMAN ,  David Frans Simon DECKERS

IPC: G03F7/20

CPC classification number: G03F7/70633 ,  G03F7/70683

Abstract: A substrate including a target structure formed in at least two layers. The target structure includes a first region having periodically repeating features in each of the layers measureable using optical metrology; and a second region having repetitions of one or more product features in each of the layers, the repetitions being sufficient for stochastic analysis to determine at least one local variation metric. The method also includes determining a correction for control of a lithographic process based on measurement of such a target structure.

公开(公告)号：US20230168594A1

公开(公告)日：2023-06-01

申请号：US17920014

申请日：2021-05-11

Applicant: ASML NETHERLANDS B.V.

Inventor： Wim Tjibbo TEL ,  Hermanus Adrianus DILLEN ,  Marc Jurian KEA ,  Roy WERKMAN ,  Weitian KOU

IPC: G03F9/00

CPC classification number: G03F9/7023 ,  G03F9/7088

Abstract: A method of determining a position of a product feature on a substrate, the method includes: obtaining a plurality of position measurements of one or more product features on a substrate, wherein the measurements are referenced to either a positioning system used in displacing the substrate in between measurements or a plane parallel to the surface of the substrate; and determining a distortion component of the substrate based on the position measurements.

公开(公告)号：US20210407112A1

公开(公告)日：2021-12-30

申请号：US17289874

申请日：2019-09-23

Applicant: ASML NETHERLANDS B.V.

Inventor： Wim Tjibbo TEL ,  Antoine Gaston Marie KIERS ,  Vadim Yourievich TIMOSHKOV ,  Hermanus Adrianus DILLEN ,  Yichen ZHANG ,  Te-Sheng WANG ,  Tzu-Chao CHEN

IPC: G06T7/33 ,  G06T7/00

Abstract: A method for determining an image-metric of features on a substrate, the method including: obtaining a first image of a plurality of features on a substrate; obtaining one or more further images of a corresponding plurality of features on the substrate, wherein at least one of the one or more further images is of a different layer of the substrate than the first image; generating aligned versions of the first and one or more further images by performing an alignment process on the first and one or more further images; and calculating an image-metric in dependence on a comparison of the features in the aligned version of the first image and the corresponding features in the one or more aligned versions of the one or more further images.

公开(公告)号：US20210003521A1

公开(公告)日：2021-01-07

申请号：US17019149

申请日：2020-09-11

Applicant: ASML Netherlands B.V.

Inventor： Thomas Jarik HUISMAN ,  Sander Frederik WUISTER ,  Hermanus Adrianus DILLEN ,  Dorothea Maria Christina OORSCHOT

IPC: G01N23/2251 ,  G03F1/84 ,  G03F7/20 ,  G06T7/62 ,  G06T7/00

Abstract: Apparatuses, systems, and methods for inspecting a semiconductor sample are disclosed. In some embodiments, the sample may comprise a structure having a plurality of openings in a top layer of the structure. In some embodiments, the method may comprise generating an image of the structure using a SEM; inspecting an opening of the plurality of openings by determining a dimension of the opening based on the image and determining an open-state of the opening, based on a contrast of the image; and determining a quality of the opening based on both the determined dimension and the determined open-state of the opening.

公开(公告)号：US20200211819A1

公开(公告)日：2020-07-02

申请号：US16730848

申请日：2019-12-30

Applicant: ASML Netherlands B.V.

Inventor： Hermanus Adrianus DILLEN ,  Wim Tjibbo Tel ,  Willem Louis Van Mierlo

IPC: H01J37/28 ,  H01J37/22

Abstract: A method for calibrating a scanning charged particle microscope, such as a scanning electron microscope (SEM), is provided. The method includes dividing a wafer into a plurality of regions; preparing, on each of the plurality of regions, a pattern including a first periodic structure interleaved with a second periodic structure, the first and second periodic structures having an induced offset; determining an actual pitch the first and second periodic structures and thereby determining actual induced offset on each of the plurality of regions; selecting a plurality of regions from among the plurality of regions; measuring, by the SEM, a pitch of first and second periodic structures on each of the plurality of regions; and performing linearity calibration on the SEM based on the determining and the measuring.

公开(公告)号：US20180275521A1

公开(公告)日：2018-09-27

申请号：US15763387

申请日：2016-10-03

Applicant: ASML NETHERLANDS B.V.

Inventor： Thomas I. WALLOW ,  Peng-cheng YANG ,  Adam LYONS ,  Mir Farrokh SHAYEGAN SALEK ,  Hermanus Adrianus DILLEN

IPC: G03F7/20 ,  G03F1/36 ,  G06F17/50

Abstract: A method including providing a plurality of unit cells for a plurality of gauge patterns appearing in one or more images of one or more patterning process substrates, each unit cell representing an instance of a gauge pattern of the plurality of gauge patterns, averaging together image information of each unit cell to arrive at a synthesized representation of the gauge pattern, and determining a geometric dimension of the gauge pattern based on the synthesized representation.