公开(公告)号：WO2020057894A1

公开(公告)日：2020-03-26

申请号：PCT/EP2019/072489

申请日：2019-08-22

Applicant: ASML NETHERLANDS B.V.

Inventor： MAAS, Ruben, Cornelis ,  POLYAKOV, Alexey, Olegovich ,  COENEN, Teis, Johan

IPC: G03F7/20

Abstract: A particle beam apparatus is described, the apparatus comprising: - an object table configured to hold a semiconductor substrate; - a particle beam source configured to generate a particle beam; - a detector configured to detect a response of the substrate caused by interaction of the particle beam with the substrate and to output a detector signal representative of the response; - a processing unit configured to: receive or determine a location of one or more defect target areas on the substrate; control the particle beam source to inspect the one or more defect target areas; identify one or more defects within the one or more defect target areas, based on the detector signal obtained during the inspection of the one or more defect target areas; control the particle beam source to repair the one or more defects.

公开(公告)号：EP4250010A1

公开(公告)日：2023-09-27

申请号：EP22164333.1

申请日：2022-03-25

Applicant: ASML Netherlands B.V.

Inventor： REININK, Johan ,  DONDERS, Sjoerd, Nicolaas, Lambertus ,  PORTER, Christina, Lynn ,  COENEN, Teis, Johan ,  DEURLOO, Jos, Henders, Bastiaan

IPC: G03F7/20 ,  G01N21/956 ,  G02F1/35

Abstract: An apparatus for measuring a parameter of a structure related to a semiconductor manufacturing process. The apparatus comprises a source assembly configured to provide measurement radiation having one or more first wavelengths for irradiating the structure on a substrate. The apparatus further comprises a filter arranged to receive scattered measurement radiation that has scattered from the structure, wherein the filter is configured to transmit the scattered measurement radiation at the one or more first wavelengths and filter out radiation at one or more second wavelengths. The filter comprises a film with a curvature in at least one direction. The apparatus further comprises a plurality of detectors, located downstream of the filter, configured to detect the filtered scattered radiation configured to measure the parameter of the structure.

公开(公告)号：EP4492141A1

公开(公告)日：2025-01-15

申请号：EP23185153.6

申请日：2023-07-13

Applicant: ASML Netherlands B.V.

Inventor： SCHOLZ, Sandy, Claudia ,  VAN RIJSWIJK, Loes, Frederique ,  NIENHUYS, Han-Kwang ,  COENEN, Teis, Johan ,  PORTER, Christina, Lynn

IPC: G03F7/00

Abstract: Disclosed is a method of metrology comprising: obtaining metrology data relating to measurement of one or more structures on a substrate, said metrology data comprising a plurality of data elements, and wherein at least some of said data elements comprise complex values; selecting a respective signal type for each respective data element of said plurality of data elements or a subset thereof to obtain processed metrology data; and determining at least one parameter of interest from said processed metrology data.

公开(公告)号：EP3875633A1

公开(公告)日：2021-09-08

申请号：EP20160615.9

申请日：2020-03-03

Applicant: Stichting Nederlandse Wetenschappelijk Onderzoek Instituten ,  Universiteit van Amsterdam ,  Stichting VU ,  ASML Netherlands B.V.

Inventor： KURGANOVA, Evgenia ,  DE VRIES, Gosse, Charles ,  POLYAKOV, Alexey, Olegovich ,  OVERKAMP, Jim, Vincent ,  COENEN, Teis, Johan ,  DRUZHININA, Tamara ,  CASTELLANOS ORTEGA, Sonia ,  LUGIER, Olivier, Christian, Maurice

IPC: C23C16/04 ,  C23C16/26 ,  C23C16/455 ,  C23C16/48 ,  C23C16/56 ,  C23C14/04 ,  G03F7/20 ,  H01L21/02 ,  H01J37/317 ,  C23C16/46

Abstract: Methods and apparatus for forming a patterned layer of material are disclosed. In one arrangement, a deposition-process material is provided in gaseous form. A layer of the deposition-process material is formed on the substrate by causing condensation or deposition of the gaseous deposition-process material. A selected portion of the layer of deposition-process material is irradiated to modify the deposition-process material in the selected portion.

公开(公告)号：EP3629086A1

公开(公告)日：2020-04-01

申请号：EP18196626.8

申请日：2018-09-25

Applicant: ASML Netherlands B.V.

Inventor： COENEN, Teis, Johan ,  NIENHUYS, Han-Kwang ,  SCHOLZ, Sandy Claudia ,  ROOBOL, Sander Bas

IPC: G03F7/20

Abstract: Methods and apparatus for determining an intensity profile of a radiation beam. The method comprises providing a diffraction structure, causing relative movement of the diffraction structure relative to the radiation beam from a first position wherein the radiation beam does not irradiate the diffraction structure to a second position wherein the radiation beam irradiates the diffraction structure, measuring, with a radiation detector, diffracted radiation signals produced from diffraction of the radiation beam by the diffraction structure as the diffraction structure transitions from the first position to the second position or vice versa, and determining the intensity profile of the radiation beam based on the measured diffracted radiation signals.

公开(公告)号：EP3528048A1

公开(公告)日：2019-08-21

申请号：EP18156870.0

申请日：2018-02-15

Applicant: ASML Netherlands B.V.

Inventor： BRUSSAARD, Gerrit Jacobus Hendrik ,  SMORENBURG, Petrus Wilhelmus ,  COENEN, Teis, Johan ,  GEYPEN, Niels ,  VAN VOORST, Peter Danny ,  ROOBOL, Sander Bas

IPC: G03F7/20 ,  G01N21/47 ,  G01J3/02 ,  G01J3/36 ,  G01N21/95 ,  G01N21/956 ,  G03F9/00 ,  G01J3/28

Abstract: A metrology apparatus for determining a characteristic of interest of a structure on a substrate, the structure having diffractive properties, the apparatus comprising: focusing optics configured to focus illumination radiation comprising a plurality of wavelengths onto the structure; a first detector configured to detect at least part of the illumination radiation which has been diffracted from the structure; and additional optics configured to produce, on at least a portion of the first detector, a wavelength-dependent spatial distribution of different wavelengths of the illumination radiation which has been diffracted from the structure, wherein the first detector is arranged to detect at least a non-zero diffraction order of the illumination radiation which has been diffracted from the structure.

公开(公告)号：EP4328670A1

公开(公告)日：2024-02-28

申请号：EP22191645.5

申请日：2022-08-23

Applicant: ASML Netherlands B.V.

Inventor： SCHOLZ, Sandy, Claudia ,  COENEN, Teis, Johan ,  PORTER, Christina, Lynn ,  VAN RIJSWIJK, Loes, Frederique ,  MIDDLEBROOKS, Scott, Anderson ,  HELFENSTEIN, Patrick, Philipp

IPC: G03F7/20

Abstract: Disclosed is a method comprising: obtaining measured data relating to at least one measurement by a measurement apparatus configured to irradiate radiation onto each of one or more structures on a substrate; decomposing the measured data using a decomposition method to obtain multiple measured data components; obtaining simulated data relating to at least one simulation based on the one or more structures; decomposing the simulated data using the decomposition method to obtain multiple simulated data components; matching between at least a portion of the simulated data components and at least a portion of the measured data components; and extracting a feature of the substrate based on the matching of at least a portion of the simulated data components and at least a portion of the measured data components.

公开(公告)号：EP3435161A1

公开(公告)日：2019-01-30

申请号：EP17182817.1

申请日：2017-07-24

Applicant: ASML Netherlands B.V.

Inventor： COENEN, Teis, Johan ,  ROOBOL, Sander, Bas ,  BIJLSMA, Sipke, Jacob

IPC: G03F7/20

Abstract: In a method of determining an edge roughness parameter of a periodic structure, the periodic structure is illuminated (602) in an inspection apparatus. The illumination radiation beam may comprise radiation with a wavelength in the range 1 nm to 100 nm. A scattering signal (604) is obtained from a radiation beam scattered from the periodic structure. The scattering signal comprises a scattering intensity signal that is obtained by detecting an image of a far-field diffraction pattern in the inspection apparatus. An edge roughness parameter, such as Lined Edge Roughness and/or Line Width Roughness is determined (606) based on a distribution of the scattering intensity signal around a non-specular diffraction order. This may be done for example using a peak broadening model.