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公开(公告)号：WO2021099051A1
公开(公告)日：2021-05-27
申请号：PCT/EP2020/079531
申请日：2020-10-20
Applicant: ASML NETHERLANDS B.V.
Inventor： LIN, Qinghuang , MAAS, Ruben, Cornelis , WUISTER, Sander, Frederik
Abstract: There is provided a polymer for use as a resist in the fabrication of integrated circuits. There is also provided a non-chemically amplified resist composition comprising a polymer having at least one scission portion comprising a light cleavable chemical linkage configured to preferentially break upon exposure of the resist composition to electromagnetic radiation. Also provided is the use of such resist compositions or polymers as well as a lithographic method incorporating such compositions or polymers.
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公开(公告)号：WO2021043936A1
公开(公告)日：2021-03-11
申请号：PCT/EP2020/074663
申请日：2020-09-03
Applicant: ASML NETHERLANDS B.V.
Inventor： KOOIMAN, Marleen , PISARENCO, Maxim , SLACHTER, Abraham , MASLOW, Mark, John , OYARZUN RIVERA, Bernardo, Andres , TEL, Wim, Tjibbo , MAAS, Ruben, Cornelis
Abstract: Described herein is a method of training a model configured to predict whether a feature associated with an imaged substrate will be defective after etching of the imaged substrate and determining etch conditions based on the trained model. The method includes obtaining, via a metrology tool, (i) an after development image of the imaged substrate at a given location, the after development image including a plurality of features, and (ii) an after etch image of the imaged substrate at the given location; and training, using the after development image and the after etch image, the model configured to determine defectiveness of a given feature of the plurality of features in the after development image. In an embodiment, the determining of defectiveness is based on comparing the given feature in the after development image with a corresponding etch feature in the after etch image.
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Patent Agency Ranking
公开(公告)号：WO2019179786A1
公开(公告)日：2019-09-26
申请号：PCT/EP2019/055714
申请日：2019-03-07
Applicant: ASML NETHERLANDS B.V.
Abstract: Disclosed is a method of, and associated apparatus for, determining an edge position relating to an edge of a feature comprised within an image, such as a scanning electron microscope image, which comprises noise. The method comprises determining a reference signal from said image; and determining said edge position with respect to said reference signal. The reference signal may be determined from the image by applying a 1-dimensional low-pass filter to the image in a direction parallel to an initial contour estimating the edge position.
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4.发明申请
公开(公告)号：WO2020057894A1
公开(公告)日：2020-03-26
申请号：PCT/EP2019/072489
申请日：2019-08-22
Applicant: ASML NETHERLANDS B.V.
IPC: G03F7/20
Abstract: A particle beam apparatus is described, the apparatus comprising: - an object table configured to hold a semiconductor substrate; - a particle beam source configured to generate a particle beam; - a detector configured to detect a response of the substrate caused by interaction of the particle beam with the substrate and to output a detector signal representative of the response; - a processing unit configured to: receive or determine a location of one or more defect target areas on the substrate; control the particle beam source to inspect the one or more defect target areas; identify one or more defects within the one or more defect target areas, based on the detector signal obtained during the inspection of the one or more defect target areas; control the particle beam source to repair the one or more defects.
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公开(公告)号：WO2018108444A1
公开(公告)日：2018-06-21
申请号：PCT/EP2017/079503
申请日：2017-11-16
Applicant: ASML NETHERLANDS B.V.
Inventor： MAAS, Ruben, Cornelis , VAN ZWOL, Pieter-Jan
CPC classification number: G03F7/70325 , G03F7/70316
Abstract: A lithographic apparatus comprising an illumination system (IL) for providing a beam of radiation (PB); a support structure (MT) for supporting a patterning device (MA), the patterning device serving to impart the radiation beam with a pattern in its cross-section; a substrate table (WT) for holding a substrate (W); and a flat lens (FL), wherein the flat lens is positioned between the support structure and the substrate table, and comprises at least four cells, wherein each cell consists of a first layer and a second layer of material, and wherein the first layer is made of a material with permittivity such that the real part of permittivity is negative and the imaginary part of permittivity is positive, and the second layer is made of a material with permittivity such that the real part of permittivity is positive and the imaginary part of permittivity is positive.
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公开(公告)号：EP3759550A1
公开(公告)日：2021-01-06
申请号：EP19705767.2
申请日：2019-02-21
Applicant: ASML Netherlands B.V.
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公开(公告)号：EP3534211A1
公开(公告)日：2019-09-04
申请号：EP18159656.0
申请日：2018-03-02
Applicant: ASML Netherlands B.V.
Inventor： DE JAGER, Pieter, Willem, Herman , WUISTER, Sander, Frederik , VAN LARE, Marie-Claire , MAAS, Ruben, Cornelis , POLYAKOV, Alexey, Olegovich
Abstract: Methods and apparatus for forming a patterned layer of material are disclosed. In one arrangement, a selected portion of a surface of a substrate is irradiated with electromagnetic radiation having a wavelength of less than 100nm during an atomic layer deposition process. The irradiation locally drives the atomic layer deposition process in the selected region and thereby causes the atomic layer deposition process to form a layer of material in a pattern defined by the selected portion.
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