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公开(公告)号：US20210375581A1
公开(公告)日：2021-12-02
申请号：US17403006
申请日：2021-08-16
Applicant: ASML NETHERLANDS B.V.
Inventor： Bernardo KASTRUP , Johannes Catharinus Hubertus MULKENS , Marinus Aart VAN DEN BRINK , Jozef Petrus Henricus BENSCHOP , Erwin Paul SMAKMAN , Tamara DRUZHININA , Coen Adrianus VERSCHUREN
Abstract: An electron beam inspection apparatus, the apparatus including a plurality of electron beam columns, each electron beam column configured to provide an electron beam and detect scattered or secondary electrons from an object, and an actuator system configured to move one or more of the electron beam columns relative to another one or more of the electron beam columns, the actuator system including a plurality of first movable structures at least partly overlapping a plurality of second movable structures, the first and second movable structures supporting the plurality of electron beam columns.
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12.发明申请公开(公告)号：US20190148189A1
公开(公告)日：2019-05-16
申请号：US16300595
申请日：2017-04-20
Applicant: ASML NETHERLANDS B.V.
Inventor： Yang-Shan HUANG , Alexey Olegovich POLYAKOV , Coen Adrianus VERSCHUREN , Pieter Willem Herman DE JAGER
IPC: H01L21/67 , H01L21/683
Abstract: A pick-and-place tool including a plurality of movable holder structures, and a plurality of pick-and-place structures, each holder structure accommodating two or more of the pick-and-place structures, wherein at least one of the two or more pick-and-place structures of a respective holder structure is able to move along a respective holder structure independently from another at least one of the two or more pick-and-place structures of the respective holder structure, and wherein each pick-and-place structure includes a pick-up element configured to pick up a donor component at a donor structure and place the donor component an acceptor structure.
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公开(公告)号：US20240085379A1
公开(公告)日：2024-03-14
申请号：US18268467
申请日：2021-12-15
Applicant: ASML Netherlands B.V.
Inventor： Mustafa Ümit ARABUL , Zili ZHOU , Willem Marie,Julia,Marcel COENE , Coen Adrianus VERSCHUREN , Paul, Louis,Maria Joseph VAN NEER , Daniele PIRAS , Sandra BLAAK , Wouter Dick KOEK , Robert Wilhelm WILLEKERS
CPC classification number: G01N29/04 , G01N29/262 , G01N29/28 , G01N2291/023 , G01N2291/106
Abstract: A metrology apparatus for determining one or more parameters of a structure fabricated in or on a semiconductor substrate. The apparatus comprises a transducer array comprising a plurality of transducers positioned in a plane. The plurality of transducers comprises at least one transmitter transducer for emitting acoustic radiation in a frequency range from 1 GHz to 100 GHz towards the structure, and at least one receiver transducer for receiving acoustic radiation reflected and/or diffracted from the structure.
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Patent Agency Ranking
公开(公告)号：US20240004313A1
公开(公告)日：2024-01-04
申请号：US18039373
申请日：2021-11-16
Applicant: ASML Netherlands B.V.
IPC: G03F7/00 , G01B11/27 , G01N21/956 , G02B27/64
CPC classification number: G03F7/706851 , G03F7/70633 , G03F7/7065 , G01B11/272 , G01N21/956 , G02B27/646 , G01N2201/063
Abstract: Disclosed is an optical imaging system, and associated method, comprising a stage module configured to support an object such that an area of the object is illuminated by an illumination beam; an objective lens configured to collect at least one signal beam, the at least one signal beam originating from the illuminated area of the object; an image sensor configured to capture an image formed by the at least one signal beam collected by the objective lens; and a motion compensatory mechanism operable to compensate for relative motion of the stage module with respect to the objective lens during an image acquisition. The motion compensatory mechanism causes a compensatory motion of one or more of: said objective lens or at least one optical element thereof; said image sensor; and/or an optical element comprised within a detection branch and/or illumination branch of the optical imaging system.
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15.发明申请公开(公告)号：US20220283122A1
公开(公告)日：2022-09-08
申请号：US17634711
申请日：2020-07-22
Applicant: ASML Netherlands B.V.
Inventor： Zili ZHOU , Mustafa ümit ARABUL , Coen Adrianus VERSCHUREN
Abstract: The disclosure relates to determining information about a target structure formed on a substrate using a lithographic process. In one arrangement, a cantilever probe is provided having a cantilever arm and a probe element. The probe element extends from the cantilever arm towards the target structure. Ultrasonic waves are generated in the cantilever probe. The ultrasonic waves propagate through the probe element into the target structure and reflect back from the target structure into the probe element or into a further probe element extending from the cantilever arm. The reflected ultrasonic waves are detected and used to determine information about the target structure.
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16.发明申请公开(公告)号：US20190339621A1
公开(公告)日：2019-11-07
申请号：US16314805
申请日：2017-06-27
Applicant: ASML NETHERLANDS B.V.
Inventor： Coen Adrianus VERSCHUREN , Erwin Paul SMAKMAN
IPC: G03F7/20
Abstract: A direct write exposure apparatus configured to process a plurality of substrates, the apparatus including: a substrate holder configured to hold a substrate having a usable patterning area; a patterning system configured to project different patterns onto the substrate; a processing system configured to: determine a first combination of one or more patterns that are to be applied on a first substrate of the plurality of substrates; and determine a second, different combination of one or more patterns that are to be applied on a second, subsequent, substrate of the plurality of substrates.
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17.发明申请公开(公告)号：US20190246480A1
公开(公告)日：2019-08-08
申请号：US16388519
申请日：2019-04-18
Applicant: ASML Netherlands B.V.
Inventor： Alexey Olegovich POLYAKOV , Richard QUINTANILHA , Vadim Yevgenyevich BANINE , Coen Adrianus VERSCHUREN
CPC classification number: H05G2/00 , G03F1/84 , G03F7/70625 , G03F7/70633 , G03F7/7065 , G03F7/7085 , G21K1/06 , H01L22/12
Abstract: A target structure (T) made by lithography or used in lithography is inspected by irradiating the structure at least a first time with EUV radiation (304) generated by inverse Compton scattering. Radiation (308) scattered by the target structure in reflection or transmission is detected (312) and properties of the target structure are calculated by a processor (340) based on the detected scattered radiation. The radiation may have a first wavelength in the EUV range of 0.1 nm to 125 nm. Using the same source and controlling an electron energy, the structure may be irradiated multiple times with different wavelengths within the EUV range, and/or with shorter (x-ray) wavelengths and/or with longer (UV, visible) wavelengths. By rapid switching of electron energy in the inverse Compton scattering source, irradiation at different wavelengths can be performed several times per second.
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公开(公告)号：US20190011841A1
公开(公告)日：2019-01-10
申请号：US16064274
申请日：2016-12-13
Applicant: ASML NETHERLANDS B.V.
Inventor： Pieter Willem Herman DE JAGER , Coen Adrianus VERSCHUREN , Erwin Paul SMAKMAN , Erwin JOhn VAN ZWET , Wouter Frans Willem MULCKHUYSE , Pieter VERHOEFF , Robert Albertus Johannes VAN DER WERF
IPC: G03F7/20
Abstract: An exposure apparatus including: a substrate holder constructed to support a substrate; a patterning device configured to provide radiation modulated according to a desired pattern, the patterning device including a plurality of two-dimensional arrays of radiation sources, each radiation source configured to emit a radiation beam; a projection system configured to project the modulated radiation onto the substrate, the projection system including a plurality of optical elements arranged side by side and arranged such that a two-dimensional array of radiation beams from a two-dimensional array of radiation sources impinges a single optical element of the plurality of optical elements; and an actuator configured to provide relative motion between the substrate and the plurality of two-dimensional arrays of radiation sources in a scanning direction to expose the substrate.
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