公开(公告)号：US20220213593A1

公开(公告)日：2022-07-07

申请号：US17600493

申请日：2020-03-20

Applicant: ASML NETHERLANDS B.V.

Inventor： Tamara DRUZHININA ,  Jim Vincent OVERKAMP ,  Alexey Olegovich POLYAKOV ,  Teis Johan COENEN ,  Evgenia KURGANOVA ,  Ionel Mugurel CIOBICA ,  Alexander Ludwig KLEIN ,  Albertus Victor Gerardus MANGNUS ,  Marijke SCOTUZZI ,  Bastiaan Maurice VAN DEN BROEK

IPC: C23C16/26 ,  C23C16/48 ,  C23C16/56 ,  G03F7/20 ,  G03F1/22

Abstract: Methods and apparatus for forming a patterned layer of material are disclosed. In one arrangement, a selected portion of a surface of a substrate is irradiated during a deposition process, the irradiation being such as to locally drive the deposition process in the selected portion to form a layer of deposited material in a pattern defined by the selected portion. The deposited material is annealed to modify the deposited material.

公开(公告)号：US20220035239A1

公开(公告)日：2022-02-03

申请号：US17278356

申请日：2019-10-02

Applicant: ASML NETHERLANDS B.V.

Inventor： Pieter-Jan VAN ZWOL ,  Sander BALTUSSEN ,  Dennis DE GRAAF ,  Johannes Christiaan Leonardus FRANKEN ,  Adrianus Johannes Maria GIESBERS ,  Alexander Ludwig KLEIN ,  Johan Hendrik KLOOTWIJK ,  Peter Simon Antonius KNAPEN ,  Evgenia KURGANOVA ,  Alexey Sergeevich KUZNETSOV ,  Arnoud Willem NOTENBOOM ,  Mahdiar VALEFI ,  Marcus Adrianus VAN DE KERKHOF ,  Wilhelmus Theodorus Anthonius Johannes VAN DEN EINDEN ,  Ties Wouter VAN DER WOORD ,  Hendrikus Jan WONDERGEM ,  Aleksandar Nikolov ZDRAVKOV

IPC: G03F1/64 ,  G03F7/20

Abstract: A method for manufacturing a membrane assembly for EUV lithography, the method including: providing a stack including: at least one membrane layer supported by a planar substrate, wherein the planar substrate has an inner region and a border region around the inner region; and a first sacrificial layer between the planar substrate and the membrane layer; selectively removing the inner region of the planar substrate such that the membrane assembly has: a membrane formed from the at least one membrane layer, and a border holding the membrane, the border having the border region of the planar substrate and the first sacrificial layer situated between the border region and the membrane layer, wherein the selectively removing the inner region of the planar substrate includes using an etchant which has a similar etch rate for the membrane layer and its oxide and a substantially different etch rate for the first sacrificial layer.