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公开(公告)号：US10592618B2
公开(公告)日：2020-03-17
申请号：US15209290
申请日：2016-07-13
Applicant: ASML Netherlands B.V.
IPC: G06F17/50 , H01L21/66 , H01L21/3065 , H01L21/308 , G03F7/20
Abstract: Parameters of a structure (900) are measured by reconstruction from observed diffracted radiation. The method includes the steps: (a) defining a structure model to represent the structure in a two- or three-dimensional model space; (b) using the structure model to simulate interaction of radiation with the structure; and (c) repeating step (b) while varying parameters of the structure model. The structure model is divided into a series of slices (a-f) along at least a first dimension (Z) of the model space. By the division into slices, a sloping face (904, 906) of at least one sub-structure is approximated by a series of steps (904′, 906′) along at least a second dimension of the model space (X). The number of slices may vary dynamically as the parameters vary. The number of steps approximating said sloping face is maintained constant. Additional cuts (1302, 1304) are introduced, without introducing corresponding steps.
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公开(公告)号：US10331041B2
公开(公告)日：2019-06-25
申请号：US16159884
申请日：2018-10-15
Applicant: ASML Netherlands B.V.
Inventor： Scott Anderson Middlebrooks , Niels Geypen , Hendrik Jan Hidde Smilde , Alexander Straaijer , Maurits Van Der Schaar , Markus Gerardus Martinus Maria Van Kraaij
IPC: G03F7/20
Abstract: Disclosed is a method of measuring a parameter of a lithographic process, and associated inspection apparatus. The method comprises measuring at least two target structures on a substrate using a plurality of different illumination conditions, the target structures having deliberate overlay biases; to obtain for each target structure an asymmetry measurement representing an overall asymmetry that includes contributions due to (i) the deliberate overlay biases, (ii) an overlay error during forming of the target structure and (iii) any feature asymmetry. A regression analysis is performed on the asymmetry measurement data by fitting a linear regression model to a planar representation of asymmetry measurements for one target structure against asymmetry measurements for another target structure, the linear regression model not necessarily being fitted through an origin of the planar representation. The overlay error can then be determined from a gradient described by the linear regression model.
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公开(公告)号：US10146140B2
公开(公告)日：2018-12-04
申请号：US15285051
申请日：2016-10-04
Applicant: ASML Netherlands B.V.
IPC: G03B27/68 , G03F7/20 , G01B15/00 , G01N23/201
Abstract: A structure of interest is irradiated with radiation for example in the x-ray or EUV waveband, and scattered radiation is detected by a detector (306). A processor (308) calculates a property such as linewidth (CD) by simulating interaction of radiation with a structure and comparing the simulated interaction with the detected radiation. A layered structure model (600, 610) is used to represent the structure in a numerical method. The structure model defines for each layer of the structure a homogeneous background permittivity and for at least one layer a non-homogeneous contrast permittivity. The method uses Maxwell's equation in Born approximation, whereby a product of the contrast permittivity and the total field is approximated by a product of the contrast permittivity and the background field. A computation complexity is reduced by several orders of magnitude compared with known methods.
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公开(公告)号：US11525786B2
公开(公告)日：2022-12-13
申请号：US17192276
申请日：2021-03-04
Applicant: ASML Netherlands B.V.
Inventor： Arie Jeffrey Den Boef , Arno Jan Bleeker , Youri Johannes Laurentius Maria Van Dommelen , Mircea Dusa , Antoine Gaston Marie Kiers , Paul Frank Luehrmann , Henricus Petrus Maria Pellemans , Maurits Van Der Schaar , Cédric Désiré Grouwstra , Markus Gerardus Martinus Maria Van Kraaij
Abstract: An apparatus and method to determine a property of a substrate by measuring, in the pupil plane of a high numerical aperture lens, an angle-resolved spectrum as a result of radiation being reflected off the substrate. The property may be angle and wavelength dependent and may include the intensity of TM- and TE-polarized radiation and their relative phase difference.
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公开(公告)号：US10732513B2
公开(公告)日：2020-08-04
申请号：US16561096
申请日：2019-09-05
Applicant: ASML Netherlands B.V.
Inventor： Scott Anderson Middlebrooks , Markus Gerardus Martinus Maria Van Kraaij , Adrianus Cornelis Matheus Koopman , Stefan Hunsche , Willem Marie Julia Marcel Coene
Abstract: A method and apparatus of detection, registration and quantification of an image. The method may include obtaining an image of a lithographically created structure, and applying a level set method to an object, representing the structure, of the image to create a mathematical representation of the structure. The method may include obtaining a first dataset representative of a reference image object of a structure at a nominal condition of a parameter, and obtaining second dataset representative of a template image object of the structure at a non-nominal condition of the parameter. The method may further include obtaining a deformation field representative of changes between the first dataset and the second dataset. The deformation field may be generated by transforming the second dataset to project the template image object onto the reference image object. A dependence relationship between the deformation field and change in the parameter may be obtained.
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Patent Agency Ranking
公开(公告)号：US10725386B2
公开(公告)日：2020-07-28
申请号：US16421697
申请日：2019-05-24
Applicant: ASML Netherlands B.V.
Inventor： Scott Anderson Middlebrooks , Niels Geypen , Hendrik Jan Hidde Smilde , Alexander Straaijer , Maurits Van Der Schaar , Markus Gerardus Martinus Maria Van Kraaij
IPC: G03F7/20
Abstract: Disclosed is a method of measuring a parameter of a lithographic process, and associated inspection apparatus. The method comprises measuring at least two target structures on a substrate using a plurality of different illumination conditions, the target structures having deliberate overlay biases; to obtain for each target structure an asymmetry measurement representing an overall asymmetry that includes contributions due to (i) the deliberate overlay biases, (ii) an overlay error during forming of the target structure and (iii) any feature asymmetry. A regression analysis is performed on the asymmetry measurement data by fitting a linear regression model to a planar representation of asymmetry measurements for one target structure against asymmetry measurements for another target structure, the linear regression model not necessarily being fitted through an origin of the planar representation. The overlay error can then be determined from a gradient described by the linear regression model.
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17.发明申请公开(公告)号：US20180239263A1
公开(公告)日：2018-08-23
申请号：US15961377
申请日：2018-04-24
Applicant: ASML Netherlands B.V.
Inventor： Simon Gijsbert Josephus Mathijssen , Stefan Hunsche , Markus Gerardus Martinus Maria Van Kraaij
Abstract: Disclosed is an inspection apparatus for use in lithography. It comprises a support for a substrate carrying a plurality of metrology targets; an optical system for illuminating the targets under predetermined illumination conditions and for detecting predetermined portions of radiation diffracted by the targets under the illumination conditions; a processor arranged to calculate from said detected portions of diffracted radiation a measurement of asymmetry for a specific target; and a controller for causing the optical system and processor to measure asymmetry in at least two of said targets which have different known components of positional offset between structures and smaller sub-structures within a layer on the substrate and calculate from the results of said asymmetry measurements a measurement of a performance parameter of the lithographic process for structures of said smaller size. Also disclosed are substrates provided with a plurality of novel metrology targets formed by a lithographic process.
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公开(公告)号：US20180164229A1
公开(公告)日：2018-06-14
申请号：US15839299
申请日：2017-12-12
Applicant: ASML Netherlands B.V.
Inventor： Maxim Pisarenco , Frank Stefan Schneider , Markus Gerardus Martinus Maria Van Kraaij , Martijn Constant Van Beurden
IPC: G01N21/956 , G03F7/20 , G01N21/95
CPC classification number: G01N21/95607 , G01N21/9501 , G03F7/705 , G03F7/70625
Abstract: Disclosed is a method for reconstructing a parameter of a lithographic process. The method comprises the step of designing a preconditioner suitable for an input system comprising the difference of a first matrix and a second matrix, the first matrix being arranged to have a multi-level structure of at least three levels whereby at least two of said levels comprise a Toeplitz structure. One such preconditioner is a block-diagonal matrix comprising a BTTB structure generated from a matrix-valued inverse generating function. A second such preconditioner is determined from an approximate decomposition of said first matrix into one or more Kronecker products.
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公开(公告)号：US09958791B2
公开(公告)日：2018-05-01
申请号：US15032507
申请日：2014-10-13
Applicant: ASML Netherlands B.V.
Inventor： Simon Gijsbert Josephus Mathijssen , Stefan Hunsche , Markus Gerardus Martinus Maria Van Kraaij
CPC classification number: G03F7/70683 , G03F7/213 , G03F7/22 , G03F7/70466 , G03F7/70616 , G03F7/70633
Abstract: Disclosed is an inspection apparatus for use in lithography. It comprises a support for a substrate carrying a plurality of metrology targets; an optical system for illuminating the targets under predetermined illumination conditions and for detecting predetermined portions of radiation diffracted by the targets under the illumination conditions; a processor arranged to calculate from said detected portions of diffracted radiation a measurement of asymmetry for a specific target; and a controller for causing the optical system and processor to measure asymmetry in at least two of said targets which have different known components of positional offset between structures and smaller sub-structures within a layer on the substrate and calculate from the results of said asymmetry measurements a measurement of a performance parameter of the lithographic process for structures of said smaller size. Also disclosed are substrates provided with a plurality of novel metrology targets formed by a lithographic process.
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公开(公告)号：US09910366B2
公开(公告)日：2018-03-06
申请号：US14906896
申请日：2014-07-18
Applicant: ASML Netherlands B.V.
Inventor： Scott Anderson Middlebrooks , Niels Geypen , Hendrik Jan Hidde Smilde , Alexander Straaijer , Maurits Van Der Schaar , Markus Gerardus Martinus Maria Van Kraaij
IPC: G03F7/20
CPC classification number: G03F7/70633
Abstract: Disclosed is a method of measuring a parameter of a lithographic process, and associated inspection apparatus. The method comprises measuring at least two target structures on a substrate using a plurality of different illumination conditions, the target structures having deliberate overlay biases; to obtain for each target structure an asymmetry measurement representing an overall asymmetry that includes contributions due to (i) the deliberate overlay biases, (ii) an overlay error during forming of the target structure and (iii) any feature asymmetry. A regression analysis is performed on the asymmetry measurement data by fitting a linear regression model to a planar representation of asymmetry measurements for one target structure against asymmetry measurements for another target structure, the linear regression model not necessarily being fitted through an origin of the planar representation. The overlay error can then be determined from a gradient described by the linear regression model.
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