公开(公告)号：US20170345138A1

公开(公告)日：2017-11-30

申请号：US15533614

申请日：2015-11-13

Applicant: ASML Netherlands B.V.

Inventor： Scott Anderson MIDDLEBROOKS ,  Markus Gerardus Martinus Maria VAN KRAAIJ ,  Maxim PISARENCO ,  Adrianus Cornelis Matheus KOOPMAN ,  Stefan HUNSCHE ,  Willem Marie Julia Marcel COENE

IPC: G06T7/00

CPC classification number: G06T7/001 ,  G03F7/705 ,  G03F7/70625 ,  G03F7/70633 ,  G06T2207/10061 ,  G06T2207/20068 ,  G06T2207/30148

Abstract: A method and apparatus of detection, registration and quantification of an image. The method may include obtaining an image of a lithographically created structure, and applying a level set method to an object, representing the structure, of the image to create a mathematical representation of the structure. The method may include obtaining a first dataset representative of a reference image object of a structure at a nominal condition of a parameter, and obtaining second dataset representative of a template image object of the structure at a non-nominal condition of the parameter. The method may further include obtaining a deformation field representative of changes between the first dataset and the second dataset. The deformation field may be generated by transforming the second dataset to project the template image object onto the reference image object. A dependence relationship between the deformation field and change in the parameter may be obtained.

公开(公告)号：US20220327364A1

公开(公告)日：2022-10-13

申请号：US17638472

申请日：2020-07-31

Applicant: ASML NETHERLANDS B.V.

Inventor： Stefan HUNSCHE ,  Fuming WANG ,  Ya LUO ,  Pioter NIKOLSKI

IPC: G06N3/06 ,  G06N7/00 ,  G06T7/00

Abstract: Systems and methods for predicting substrate geometry associated with a patterning process are described. Input information including geometry information and/or process information for a pattern is received and, using a machine learning prediction model, multi-dimensional output substrate geometry is predicted. The multi-dimensional output information may include pattern probability images. A stochastic edge placement error band and/or a stochastic failure rate may be predicted. The input information can include simulated aerial images, simulated resist images, target substrate dimensions, and/or data from a lithography apparatus associated with device manufacturing. Different aerial images may correspond to different heights in resist layers associated with the patterning process, for example.

公开(公告)号：US20220187713A1

公开(公告)日：2022-06-16

申请号：US17441729

申请日：2020-03-26

Applicant: ASML NETHERLANDS B.V.

Inventor： Scott Anderson MIDDLEBROOKS ,  Adrianus Cornelis Matheus KOOPMAN ,  Markus Gerardus Martinus Maria VAN KRAAIJ ,  Maxim PISARENCO ,  Stefan HUNSCHE

IPC: G03F7/20 ,  G06N3/08 ,  G06T7/00

Abstract: A method for training a machine learning model configured to predict a substrate image corresponding to a printed pattern of a substrate as measured via a metrology tool. The method involves obtaining a training data set including (i) metrology data of the metrology tool used to measure the printed pattern of the substrate, and (ii) a representation of a mask pattern employed for imaging the printed pattern on the substrate; and training, based on the training data set, a machine learning model to predict the substrate image of the substrate as measured by the metrology tool such that a cost function is improved, wherein the cost function includes a relationship between the predicted substrate image and the metrology data.

公开(公告)号：US20210356874A1

公开(公告)日：2021-11-18

申请号：US17389842

申请日：2021-07-30

Applicant: ASML NETHERLANDS B.V.

Inventor： Abraham SLACHTER ,  Stefan HUNSCHE ,  Wim Tjibbo TEL ,  Anton Bernhard VAN OOSTEN ,  Koenraad VAN INGEN SCHENAU ,  Gijsbert RISPENS ,  Brennan PETERSON

IPC: G03F7/20

Abstract: A method including obtaining (i) measurements of a parameter of the feature, (ii) data related to a process variable of a patterning process, (iii) a functional behavior of the parameter defined as a function of the process variable based on the measurements of the parameter and the data related to the process variable, (iv) measurements of a failure rate of the feature, and (v) a probability density function of the process variable for a setting of the process variable, converting the probability density function of the process variable to a probability density function of the parameter based on a conversion function, where the conversion function is determined based on the function of the process variable, and determining a parameter limit of the parameter based on the probability density function of the parameter and the measurements of the failure rate.

公开(公告)号：US20210181642A1

公开(公告)日：2021-06-17

申请号：US17162017

申请日：2021-01-29

Applicant: ASML NETHERLANDS B.V.

Inventor： Tanbir HASAN ,  Vivek Kumar JAIN ,  Stefan HUNSCHE ,  Bruno LA FONTAINE

IPC: G03F7/20 ,  G03F9/00

Abstract: A method of topography determination, the method including: obtaining a first focus value derived from a computational lithography model modeling patterning of an unpatterned substrate or derived from measurements of a patterned layer on an unpatterned substrate; obtaining a second focus value derived from measurement of a substrate having a topography; and determining a value of the topography from the first and second focus values.

公开(公告)号：US20210018850A1

公开(公告)日：2021-01-21

申请号：US16955483

申请日：2018-12-17

Applicant: ASML NETHERLANDS B.V.

Inventor： Abraham SLACHTER ,  Stefan HUNSCHE ,  Wim Tjibbo TEL ,  Anton Bernhard VAN OOSTEN ,  Koenraad VAN INGEN SCHENAU ,  Gijsbert RISPENS ,  Brennan PETERSON

IPC: G03F7/20

Abstract: A method including obtaining (i) measurements of a parameter of the feature, (ii) data related to a process variable of a patterning process, (iii) a functional behavior of the parameter defined as a function of the process variable based on the measurements of the parameter and the data related to the process variable, (iv) measurements of a failure rate of the feature, and (v) a probability density function of the process variable for a setting of the process variable, converting the probability density function of the process variable to a probability density function of the parameter based on a conversion function, where the conversion function is determined based on the function of the process variable, and determining a parameter limit of the parameter based on the probability density function of the parameter and the measurements of the failure rate.

公开(公告)号：US20190310553A1

公开(公告)日：2019-10-10

申请号：US16315026

申请日：2017-07-07

Applicant: ASML NETHERLANDS B.V.

Inventor： Marinus JOCHEMSEN ,  Stefan HUNSCHE ,  Wim Tjibbo TEL

IPC: G03F7/20

Abstract: A method including determining a first color pattern and a second color pattern associated with a hot spot of a design layout pattern, the design layout pattern configured for transfer to a substrate, and predicting, by a hardware computer system, whether there would be a defect at the hot spot on the substrate caused by overlay error, based at least in part on a measurement of an overlay error between the first color pattern and the second color pattern.

公开(公告)号：US20180173104A1

公开(公告)日：2018-06-21

申请号：US15580515

申请日：2016-05-25

Applicant: ASML NETHERLANDS B.V.

Inventor： Stefan HUNSCHE ,  Rafael ALDANA LASO ,  Vivek Kumar JAIN ,  Marinus JOCHEMSEN ,  Xinjian ZHOU

IPC: G03F7/20 ,  G06T7/00 ,  G06T3/00

CPC classification number: G03F7/7065 ,  G06T3/0068 ,  G06T7/001 ,  G06T2207/30148

Abstract: A method of defect validation for a device manufacturing process, the method including: obtaining a first image of a pattern processed into an area on a substrate using the device manufacturing process under a first condition; obtaining a metrology image from the area; aligning the metrology image and the first image; and determining from the first image and the metrology image whether the area contains a defect, based on one or more classification criteria.

公开(公告)号：US20160274472A1

公开(公告)日：2016-09-22

申请号：US15032507

申请日：2014-10-13

Applicant: ASML NETHERLANDS B.V.

Inventor： Simon Gijsbert Josephus MATHIJSSEN ,  Stefan HUNSCHE ,  Markus Gerardus Martinus Maria VAN KRAAIJ

IPC: G03F7/20 ,  G03F7/213 ,  G03F7/22

CPC classification number: G03F7/70683 ,  G03F7/213 ,  G03F7/22 ,  G03F7/70466 ,  G03F7/70616 ,  G03F7/70633

Abstract: Disclosed is an inspection apparatus for use in lithography. It comprises a support for a substrate carrying a plurality of metrology targets; an optical system for illuminating the targets under predetermined illumination conditions and for detecting predetermined portions of radiation diffracted by the targets under the illumination conditions; a processor arranged to calculate from said detected portions of diffracted radiation a measurement of asymmetry for a specific target; and a controller for causing the optical system and processor to measure asymmetry in at least two of said targets which have different known components of positional offset between structures and smaller sub-structures within a layer on the substrate and calculate from the results of said asymmetry measurements a measurement of a performance parameter of the lithographic process for structures of said smaller size. Also disclosed are substrates provided with a plurality of novel metrology targets formed by a lithographic process.

Abstract translation: 公开了一种用于光刻的检查装置。 它包括用于承载多个计量目标的基板的支撑件; 光学系统，用于在预定的照明条件下照射所述目标，并用于在所述照明条件下检测由所述目标衍射的辐射的预定部分; 处理器，被布置成从所述检测到的衍射辐射部分计算特定目标的不对称度; 以及控制器，用于使所述光学系统和处理器测量所述目标中的至少两个中的不对称性，所述对象在所述基底上的层内的结构之间的位置偏移和较小子结构之间具有不同的已知分量，并且根据所述不对称测量的结果计算 用于所述较小尺寸结构的光刻工艺的性能参数的测量。 还公开了提供有通过光刻工艺形成的多个新颖度量目标的基板。

公开(公告)号：US20230333481A1

公开(公告)日：2023-10-19

申请号：US18207732

申请日：2023-06-09

Applicant: ASML NETHERLANDS B.V.

Inventor： Hans VAN DER LAAN ,  Wim Tjibbo TEL ,  Marinus JOCHEMSEN ,  Stefan HUNSCHE

IPC: G03F7/20 ,  G06F30/398 ,  H01L21/66

CPC classification number: G03F7/705 ,  G03F7/70616 ,  G06F30/398 ,  G03F7/70608 ,  G03F7/70625 ,  G03F7/7065 ,  H01L22/20 ,  H01L22/12

Abstract: A process of selecting a measurement location, the process including: obtaining pattern data describing a pattern to be applied to substrates in a patterning process; obtaining a process characteristic measured during or following processing of a substrate, the process characteristic characterizing the processing of the substrate; determining a simulated result of the patterning process based on the pattern data and the process characteristic; and selecting a measurement location for the substrate based on the simulated result.