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公开(公告)号:SG120952A1
公开(公告)日:2006-04-26
申请号:SG200305680
申请日:2003-09-11
Applicant: ASML NETHERLANDS BV
Inventor: BEST KEITH FRANK , JOSEPH CONSOLINI , FRIZ ALEXANDER , BUEL VAN HENRICUS WILHELMUS MA
IPC: G01B11/26 , G03F9/00 , G01B11/00 , H01L21/027 , G03F7/20
Abstract: While the alignment beam is focused on a mark on the substrate table, the substrate table is moved substantially perpendicularly to the alignment beam. If the image of the mark moves relative to a reference mark, then the substrate and the alignment beam are not perpendicular. The mark on the substrate table is aligned to a plurality of reference marks. At least two substrate marks are then aligned with a single reference mark. Errors due to the inclination of the alignment beam are eliminated from the expansion and rotation values calculated for the substrate.
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公开(公告)号:SG142129A1
公开(公告)日:2008-05-28
申请号:SG2003065968
申请日:2003-11-06
Applicant: ASML NETHERLANDS BV
Inventor: BEST KEITH FRANK , CONSOLINI JOSEPH J , FRIZ ALEXANDER
IPC: G03F9/00 , G03C5/00 , G03F7/00 , G03F7/20 , H01L21/027 , H01L23/544
Abstract: Device Manufacturing Method and Device Manufactured Thereby A device manufacturing method comprising the steps of providing a first substrate having first and second surfaces; patterning said first surface of said substrate with at least one reversed alignment marker; providing a protective layer over said alignment marker(s); bonding said first surface of said first substrate to a second substrate; locally etching said first substrate as far as said protective layer to form a trench around the or each reversed alignment marker; and forming at least one patterned layer on said second surface using a lithographic projection apparatus having a front-to- backside alignment system whilst aligning said substrate to the alignment markers revealed in the or each trench.
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公开(公告)号:DE602004011458D1
公开(公告)日:2008-03-13
申请号:DE602004011458
申请日:2004-12-15
Applicant: ASML NETHERLANDS BV
Inventor: CONSOLINI JOSEPH J , BEST KEITH FRANK , FRIZ ALEXANDER
IPC: G01B11/00 , G03F9/00 , G03F7/20 , H01L21/027
Abstract: In a method of measurement according to one embodiment of the invention, a relative position of a temporary alignment mark on one side of a substrate and an alignment mark on the other side of the substrate is determined, and the temporary alignment mark is removed. Before removal of the temporary alignment mark, a relative position of that mark and another mark on the same side of the substrate may be determined. The temporary alignment mark may be formed in, e.g., an oxide layer.
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公开(公告)号:SG123589A1
公开(公告)日:2006-07-26
申请号:SG200307556
申请日:2003-12-18
Applicant: ASML NETHERLANDS BV
Inventor: BEST KEITH FRANK , CONSOLINI JOSEPH J , FRIZ ALEXANDER
IPC: G01B11/00 , G03F9/00 , H01L21/027
Abstract: A method according to one embodiment of the invention may be used in determining relative positions of developed patterns on a substrate (exposed e.g. using the step mode). Such a method uses reference marks which are located within or even superimposed on device patterns. Also disclosed is a mask of a lithographic projection apparatus including reference marks that may be used in such a method.
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15.
公开(公告)号:SG113012A1
公开(公告)日:2005-07-28
申请号:SG200407676
申请日:2004-12-23
Applicant: ASML NETHERLANDS BV
Inventor: CONSOLINI JOSEPH J , BEST KEITH FRANK , FRIZ ALEXANDER
IPC: G01B11/00 , G03F7/20 , G03F9/00 , H01L21/027
Abstract: In a method of measurement according to one embodiment of the invention, a relative position of a temporary alignment mark on one side of a substrate and an alignment mark on the other side of the substrate is determined, and the temporary alignment mark is removed. Before removal of the temporary alignment mark, a relative position of that mark and another mark on the same side of the substrate may be determined. The temporary alignment mark may be formed in, e.g., an oxide layer.
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