公开(公告)号：JP2005191570A

公开(公告)日：2005-07-14

申请号：JP2004371085

申请日：2004-12-22

Applicant: Asml Netherlands Bv ,  エイエスエムエル ネザランドズ ベスローテン フエンノートシャップ

Inventor： CONSOLINI JOSEPH J ,  BEST KEITH FRANK ,  FRIZ ALEXANDER

IPC: G01B11/00 ,  G03F7/20 ,  G03F9/00 ,  H01L21/027

CPC classification number: G03F9/7003 ,  G03F9/7076 ,  G03F9/7084

Abstract: PROBLEM TO BE SOLVED: To provide a measuring method, a method of providing an alignment mark and to provide a device manufacturing method.
SOLUTION: According to the measuring method by one embodiment, the relative mark between the provisional alignment mark of one surface in a substrate and the alignment mark of the other surface thereof is determined, and the provisional alignment mark is removed. Prior to the removal of the provisional alignment mark, the relative position between the provisional alignment mark and the other mark on the same surface of the substrate can be determined. The provisional alignment mark, for example, can be formed on an oxide layer on the substrate.
COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：提供测量方法，提供对准标记的方法并提供器件制造方法。 解决方案：根据一个实施例的测量方法，确定衬底中一个表面的临时对准标记与其另一个表面的对准标记之间的相对标记，并且去除临时对准标记。 在移除临时对准标记之前，可以确定临时对准标记与衬底的相同表面上的另一个标记之间的相对位置。 临时对准标记例如可以形成在基板上的氧化物层上。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2004279403A

公开(公告)日：2004-10-07

申请号：JP2003359976

申请日：2003-09-11

Applicant: Asml Netherlands Bv ,  エイエスエムエル ネザランドズ ベスローテン フエンノートシャップ

Inventor： BEST KEITH FRANK ,  CONSOLINI JOSEPH ,  FRIZ ALEXANDER ,  VAN BUEL HENRICUS WILHELMUS MA

IPC: G01B11/00 ,  G01B11/26 ,  G03F9/00 ,  H01L21/027

CPC classification number: G03F9/7015

Abstract: PROBLEM TO BE SOLVED: To provide a method for which substrate (wafer) alignment to a reference mark is improved.
SOLUTION: While the alignment beam is focused on the mark on the substrate table, the substrate table is moved substantially perpendicular to the alignment beam. If the image of the mark moves relative to the reference mark, the substrate and the alignment beam will not be perpendicular. The positions of the marks on the substrate table are adjusted so as to coincide with those of a plurality of reference marks. Although at least two substrate marks are aligned with a single reference mark, errors due to inclination of the alignment beam are excluded from the expansion and rotation values calculated with respect to the substrate.
COPYRIGHT: (C)2005,JPO&NCIPI

公开(公告)号：JP2006186369A

公开(公告)日：2006-07-13

申请号：JP2005372013

申请日：2005-12-26

Applicant: ASML NETHERLANDS BV

Inventor： BEST KEITH FRANK ,  CONSOLINI JOSEPH J ,  FRIZ ALEXANDER ,  CHISHOLM RODNEY

IPC: H01L21/027 ,  G03F7/20 ,  H01L21/02 ,  H01L21/68

Abstract: PROBLEM TO BE SOLVED: To provide a wafer which is a semiconductor wafer of which surfaces on both sides can be polished to any degree. SOLUTION: One side of a semiconductor wafer is polished to comparatively higher degree that is suitable for making a fine pattern by a lithography process, and the other side thereof is polished to comparatively low degree, that is appropriate to provide alignment marks WM3 and WM4 effective for arranging wafers in the lithography process. COPYRIGHT: (C)2006,JPO&NCIPI

公开(公告)号：JP2004165670A

公开(公告)日：2004-06-10

申请号：JP2003382650

申请日：2003-11-12

Applicant: Asml Netherlands Bv ,  エイエスエムエル ネザランドズ ベスローテン フエンノートシャップ

Inventor： BEST KEITH FRANK ,  CONSOLINI JOSEPH J ,  FRIZ ALEXANDER

IPC: G03F9/00 ,  G03C5/00 ,  G03F7/00 ,  G03F7/20 ,  H01L21/027

CPC classification number: G03F9/7003

Abstract: PROBLEM TO BE SOLVED: To provide a device manufacturing method which can print on one side of a substrate with improved precision after aligning the substrate by referring to the markers provided on the other side of the substrate without using additional hardware.
SOLUTION: This device manufacturing method comprises a process of preparing a first substrate W having a first surface 10a and a second surface 10b, a process of forming a pattern composed of at least one inversion alignment marking (1-8) on the first surface of the first substrate, a process of providing a protective layer 11 on the alignment marking, a process of joining the first surface of the first substrate to a second substrate CW, a process of locally etching the first substrate to the protective layer to form a trench 17 around the inversion alignment marking, and a process of using a lithographic projection apparatus having a front/rear alignment unit to align the substrates by referring to the alignment marking which is enclosed by the trench and to form at least one patterned layer 15 on the second surface.
COPYRIGHT: (C)2004,JPO

公开(公告)号：JP2007013192A

公开(公告)日：2007-01-18

申请号：JP2006203910

申请日：2006-06-28

Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

Inventor： BEST KEITH FRANK ,  CONSOLINI JOSEPH J ,  FRIZ ALEXANDER ,  CASPER BIJNEN FRANCISCUS GODEF ,  TOLSMA HOITE PIETER THEODOOR ,  BERGE PETER T

IPC: H01L21/027 ,  G03F7/40 ,  G03F9/00

CPC classification number: G03F9/7019 ,  A41D2400/00 ,  G03F7/70633 ,  G03F9/7003 ,  G03F9/7011 ,  G03F9/7084 ,  G03F9/7088

Abstract: PROBLEM TO BE SOLVED: To provide a method for analyzing the behavior of front side marks on a substrate, during a process of manufacturing a device, without the need for etching global alignment marks.
SOLUTION: A plurality of front-side marks are manufactured on the front side of a substrate by a method for manufacturing a device, and these marks are used to locally align the substrate during exposure. After a certain number of processing steps, the positions of the front side marks are measured and compared with respect to their original positions. Next, the change, that is, their behavior, can be analyzed in the measured positions of the front side marks. The original positions and actual positions thereof are defined, with respect to a nominal grid which is defined by using global alignment marks which are positioned at the back side of the substrate. Because the global alignment marks are positioned on the back side, they will not be affected by any processing step.
COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：提供一种用于分析基板上的正面标记的行为的方法，在制造装置的过程中，不需要蚀刻全局对准标记。 解决方案：通过制造装置的方法在基板的正面上制造多个前侧标记，并且这些标记用于在曝光期间局部对准基板。 在一定数量的处理步骤之后，测量前侧标记的位置并相对于其原始位置进行比较。 接下来，可以在前侧标记的测量位置分析变化，即它们的行为。 关于通过使用位于基板的背面的全局对准标记限定的标称网格来定义其原始位置和实际位置。 因为全局对齐标记位于背面，所以它们不受任何处理步骤的影响。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2006054460A

公开(公告)日：2006-02-23

申请号：JP2005230602

申请日：2005-08-09

Applicant: Asml Netherlands Bv ,  エイエスエムエル ネザランドズ ベスローテン フエンノートシャップ

Inventor： BEST KEITH FRANK ,  CONSOLINI JOSEPH J ,  FRIZ ALEXANDER

IPC: H01L21/027 ,  G03F7/20 ,  G03F9/00 ,  H01L21/68

CPC classification number: H02K9/20 ,  H02K55/04 ,  Y02E40/625

Abstract: PROBLEM TO BE SOLVED: To provide a positioning-mark providing method, a substrate-positioning method, a device manufacturing method, a computer program, and a device. SOLUTION: In one embodiment, a first and second set positioning marks are etched on the first surface of a substrate. The first set-positioning mark is located at one or plurality of positions so that these marks appear in the object window of the front/back positioning optical system of a first lithography apparatus, and one or plurality of positions of positioning mark of a second set are selected, based on the location of a positioning device of another lithography apparatus. When the substrate is reversed and the positioning is carried out, using the positioning mark of the first set and the front/back positioning optical system, the positioning marks of third and fourth of sets are etched at the positions directly opposite to the positioning marks of the first and second sets, respectively. COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供定位标记提供方法，基板定位方法，装置制造方法，计算机程序和装置。 解决方案：在一个实施例中，在衬底的第一表面上蚀刻第一和第二组定位标记。 第一定位标记位于一个或多个位置，使得这些标记出现在第一光刻设备的前/后定位光学系统的物体窗口中，并且第二组的定位标记的一个或多个位置 基于另一光刻设备的定位装置的位置来选择。 当基板反转并进行定位时，使用第一组和前/后定位光学系统的定位标记，在与定位标记的定位标记直接相对的位置处蚀刻第三组和第四组的定位标记 第一和第二组。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2004200701A

公开(公告)日：2004-07-15

申请号：JP2003420705

申请日：2003-12-18

Applicant: Asml Netherlands Bv ,  エイエスエムエル ネザランドズ ベスローテン フエンノートシャップ

Inventor： BEST KEITH FRANK ,  CONSOLINI JOSEPH J ,  FRIZ ALEXANDER

IPC: G01B11/00 ,  G03F9/00 ,  H01L21/027

CPC classification number: G03F9/7084 ,  G03F9/7076

Abstract: PROBLEM TO BE SOLVED: To provide an improved method to measure the relative location of a plurality of patterns produced on a substrate.
SOLUTION: This method is to measure the relative position of the patterns produced on the substrate by a step mode, using a reference mark overlaid on the device pattern. In this specification, a mark of the lithography apparatus including the reference mark to use in the method is also disclosed.
COPYRIGHT: (C)2004,JPO&NCIPI

公开(公告)号：DE60322331D1

公开(公告)日：2008-09-04

申请号：DE60322331

申请日：2003-12-18

Applicant: ASML NETHERLANDS BV

Inventor： BEST KEITH FRANK ,  CONSOLINI JOSEPH J ,  FRIZ ALEXANDER

IPC: G01B11/00 ,  G03F9/00 ,  H01L21/027

Abstract: A method according to one embodiment of the invention may be used in determining relative positions of developed patterns on a substrate (exposed e.g. using the step mode). Such a method uses reference marks which are located within or even superimposed on device patterns. Also disclosed is a mask of a lithographic projection apparatus including reference marks that may be used in such a method.

公开(公告)号：DE602004011458T2

公开(公告)日：2009-01-15

申请号：DE602004011458

申请日：2004-12-15

Applicant: ASML NETHERLANDS BV

Inventor： CONSOLINI JOSEPH J ,  BEST KEITH FRANK ,  FRIZ ALEXANDER

IPC: G01B11/00 ,  G03F9/00 ,  G03F7/20 ,  H01L21/027

Abstract: In a method of measurement according to one embodiment of the invention, a relative position of a temporary alignment mark on one side of a substrate and an alignment mark on the other side of the substrate is determined, and the temporary alignment mark is removed. Before removal of the temporary alignment mark, a relative position of that mark and another mark on the same side of the substrate may be determined. The temporary alignment mark may be formed in, e.g., an oxide layer.

公开(公告)号：DE602005008693D1

公开(公告)日：2008-09-18

申请号：DE602005008693

申请日：2005-12-16

Applicant: ASML NETHERLANDS BV

Inventor： BEST KEITH FRANK ,  CONSOLINI JOSEPH J ,  FRIZ ALEXANDER

IPC: H01L23/544 ,  H01L21/58 ,  H01L21/66

Abstract: In a method for measuring the bonding quality of bonded substrates, such as bonded SOI wafers, a plurality of marks are created at a first side of a top substrate after, or before, the bonding of the top substrate onto a bottom substrate. Then, the positions of the plurality of marks are measured using a metrology tool. Next, for each of the marks, a difference between a measured position and an expected position is calculated. These differences can be used to determine delamination between the top substrate and the bottom substrate. By displaying a vector field representing the differences, and by not showing vectors that exceed a certain threshold, the delamination areas can be made visible.