Abstract:
Multiple component package structures are described in which an interposer chiplet is integrated to provide fine routing between components. In an embodiment, the interposer chiplet and a plurality of conductive vias are encapsulated in an encapsulation layer. A first plurality of terminals of the first and second components may be in electrical connection with the plurality of conductive pillars and a second plurality of terminals of first and second components may be in electrical connection with the interposer chiplet.
Abstract:
In some embodiments, a system may include an integrated circuit. The integrated circuit may include a substrate including a first surface, a second surface substantially opposite of the first surface, and a first set of electrical conductors coupled to the first surface. The first set of electrical conductors may function to electrically connect the integrated circuit to a circuit board. The integrated circuit may include a semiconductor die coupled to the second surface of the substrate using a second set of electrical conductors. The integrated circuit may include a passive device dimensioned to be integrated with the integrated circuit. The passive device may be positioned between the second surface and at least one of the first set of electrical conductors. The die may be electrically connected to a second side of the passive device. A first side of the passive device may be available to be electrically connected to a second device.
Abstract:
In some embodiments, a method and/or a system may include an integrated circuit. The integrated circuit may include a semiconductor die. The integrated circuit may include a plurality of wiring layers. At least one metal-insulator-metal (MIM) capacitor may be formed within the plurality of wiring layers. The integrated circuit may include a circuit. The circuit may include at least an inductor and a voltage regulator which, with the MIM capacitor, forms a voltage regulator for the semiconductor die. The circuit may be coupled substantially below at least a portion of the MIM capacitor in the plurality of layers. The circuit may be electrically coupled to the capacitor through the plurality of wiring layers. The integrated circuit may include a plurality of electrical connectors, the plurality of electrical connectors coupled to the second surface at points separate from an area of the second surface that is occupied by the circuit.
Abstract:
In some embodiments, a system may include an integrated circuit. The integrated circuit may include a substrate including a first surface, a second surface substantially opposite of the first surface, and a first set of electrical conductors coupled to the first surface. The first set of electrical conductors may function to electrically connect the integrated circuit to a circuit board. The integrated circuit may include a semiconductor die coupled to the second surface of the substrate using a second set of electrical conductors. The integrated circuit may include a passive device dimensioned to be integrated with the integrated circuit. The passive device may be positioned between the second surface and at least one of the first set of electrical conductors. The die may be electrically connected to a second side of the passive device. A first side of the passive device may be available to be electrically connected to a second device.
Abstract:
Vertically stacked system in package structures are described. In an embodiment, a package includes a first level molding and fan out structure, a third level molding and fan out structure, and a second level molding and fan out structure between the first and third levels. The second level molding and fan out structure includes back-to-back facing die, with a front surface of each die bonded to a redistribution layer.
Abstract:
Packages and methods of formation are described. In an embodiment, a system in package (SiP) includes first and second redistribution layers (RDLs), and a plurality of die attached to the front and back side of the first RDL. The first and second RDLs are coupled together with a plurality of conductive pillars extending from the back side of the first RDL to a front side of the second RDL.
Abstract:
A system in package structure and method of fabrication using wafer reconstitution are described. In an embodiment a 3D system includes a mid-layer interposer a first package level underneath the mid-layer interposer and a second package level over the mid-layer interposer. First-level dies and second-level dies can be bonded to the mid-layer interposer with ultra fine micro bumps. Dies within the first and/or second package levels may optionally be connected with one or more optical interconnect paths.
Abstract:
Multi-die structures and methods of fabrication are described. In an embodiment, a multi-die structure includes a first die, a second die, and die-to-die routing connecting the first die to the second die. The die-to-die interconnection may be monolithically integrated as a chip-level die-to-die routing, or external package-level die-to-die routing.
Abstract:
Systems including voltage regulator circuits are disclosed. In one embodiment, an apparatus includes a voltage regulator controller integrated circuit (IC) die including one or more portions of a voltage regulator circuit. The apparatus further includes a capacitor die, an inductor die, and an interconnect layer arranged over the voltage regulator controller IC die, the capacitor die and the inductor die. The interconnect provides electrical connections between the voltage regulator controller IC die, the capacitor die and the inductor die to form the voltage regulator circuit. In a further embodiment, the voltage regulator controller IC die, the capacitor die and the inductor die are arranged in a planar fashion within a voltage regulator module. In still another embodiment, a system IC is coupled to the voltage regulator module and includes one or more functional circuit blocks coupled to receive a regulated supply voltage generated by the voltage regulator circuit.
Abstract:
Multi-die structures with die-to-die routing are described. In an embodiment, each die is patterned into the same semiconductor substrate, and the dies may be interconnected with die-to-die routing during back-end wafer processing. Partial metallic seals may be formed to accommodate the die-to-die routing, programmable dicing, and various combinations of full metallic seals and partial metallic seals can be formed. This may also be extended to three dimensional structures formed using wafer-on-wafer or chip-on-wafer techniques.