公开(公告)号：US20160260684A1

公开(公告)日：2016-09-08

申请号：US14638925

申请日：2015-03-04

Applicant: Apple Inc.

Inventor： Jun Zhai ,  Kunzhong Hu ,  Kwan-Yu Lai ,  Mengzhi Pang ,  Chonghua Zhong ,  Se Young Yang

IPC: H01L25/065 ,  H01L25/00

CPC classification number: H01L25/0652 ,  H01L21/568 ,  H01L23/3135 ,  H01L23/49816 ,  H01L23/5383 ,  H01L23/5384 ,  H01L23/5389 ,  H01L24/19 ,  H01L24/96 ,  H01L25/50 ,  H01L2224/04105 ,  H01L2224/08167 ,  H01L2224/12105 ,  H01L2224/131 ,  H01L2224/16227 ,  H01L2224/27318 ,  H01L2224/2732 ,  H01L2224/27436 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/73267 ,  H01L2224/81193 ,  H01L2224/83191 ,  H01L2224/83855 ,  H01L2224/83862 ,  H01L2224/83874 ,  H01L2224/92244 ,  H01L2224/94 ,  H01L2225/06517 ,  H01L2225/0652 ,  H01L2225/06524 ,  H01L2225/06572 ,  H01L2924/1431 ,  H01L2924/1433 ,  H01L2924/1434 ,  H01L2924/1436 ,  H01L2924/1461 ,  H01L2924/18161 ,  H01L2924/18162 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19105 ,  H01L2224/27 ,  H01L2924/014

Abstract: Packages and methods of formation are described. In an embodiment, a system in package (SiP) includes first and second redistribution layers (RDLs), and a plurality of die attached to the front and back side of the first RDL. The first and second RDLs are coupled together with a plurality of conductive pillars extending from the back side of the first RDL to a front side of the second RDL.

Abstract translation: 描述了包装和形成方法。 在一个实施例中，封装系统（SiP）包括第一和第二再分配层（RDL）以及附接到第一RDL的前侧和后侧的多个管芯。 第一和第二RDL与从第一RDL的后侧延伸到第二RDL的前侧的多个导电柱连接在一起。

公开(公告)号：US10102962B1

公开(公告)日：2018-10-16

申请号：US15163909

申请日：2016-05-25

Applicant: Apple Inc.

Inventor： David P. Cappabianca ,  Zhitao Cao ,  Kwan-Yu Lai

IPC: H01F17/06 ,  H01F27/02 ,  H05K7/10 ,  H01F27/28 ,  H01F27/29 ,  H01F27/32 ,  H01F41/10 ,  H05K1/18

Abstract: An inductive device is disclosed, including a first wire coupled to a first terminal and to a second terminal, a non-conductive material surrounding the first wire, and a magnetic film. The non-conductive material spans the region from the first terminal to the second terminal. The magnetic film surrounds at least a portion of the non-conductive material between the first terminal and the second terminal. The first wire has a first amount of inductance.

公开(公告)号：US09559081B1

公开(公告)日：2017-01-31

申请号：US14935310

申请日：2015-11-06

Applicant: Apple Inc.

Inventor： Kwan-Yu Lai ,  Jun Zhai ,  Kunzhong Hu

IPC: H01L25/065 ,  H01L23/31 ,  H01L23/48 ,  H01L21/56 ,  H01L21/683 ,  H01L25/00 ,  H01L23/00 ,  H01L21/768

CPC classification number: H01L25/0657 ,  H01L21/486 ,  H01L21/568 ,  H01L21/6835 ,  H01L21/7684 ,  H01L23/147 ,  H01L23/3107 ,  H01L23/481 ,  H01L23/49816 ,  H01L23/5384 ,  H01L23/5385 ,  H01L23/5386 ,  H01L23/5389 ,  H01L24/80 ,  H01L24/89 ,  H01L25/0652 ,  H01L25/0655 ,  H01L25/10 ,  H01L25/105 ,  H01L25/50 ,  H01L2221/68327 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2225/06541 ,  H01L2225/06548 ,  H01L2924/181 ,  H01L2924/186

Abstract: Packages and 3D die stacking processes are described. In an embodiment, a package includes a second level die hybrid bonded to a first package level including a first level die encapsulated in an oxide layer, and a plurality of through oxide vias (TOVs) extending through the oxide layer. In an embodiment, the TOVs and the first level die have a height of about 20 microns or less.

Abstract translation: 描述了封装和3D裸片堆叠过程。 在一个实施例中，封装包括结合到包括封装在氧化物层中的第一级管芯的第一封装级的第二级管芯晶体管和延伸穿过氧化物层的多个通孔氧化物通孔（TOV）。 在一个实施例中，TOV和第一级模具具有大约20微米或更小的高度。

公开(公告)号：US20160358889A1

公开(公告)日：2016-12-08

申请号：US14730171

申请日：2015-06-03

Applicant: Apple Inc.

Inventor： Kwan-Yu Lai ,  Jun Zhai ,  Kunzhong Hu ,  Flynn P. Carson

IPC: H01L25/065 ,  H01L23/31 ,  H01L21/768 ,  H01L21/56 ,  H01L25/00 ,  H01L23/48 ,  H01L23/528

CPC classification number: H01L21/768 ,  H01L21/568 ,  H01L21/76898 ,  H01L23/3128 ,  H01L23/481 ,  H01L23/49816 ,  H01L23/5383 ,  H01L23/5384 ,  H01L23/5389 ,  H01L24/16 ,  H01L24/19 ,  H01L24/20 ,  H01L24/32 ,  H01L24/73 ,  H01L24/92 ,  H01L24/96 ,  H01L25/105 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/06181 ,  H01L2224/12105 ,  H01L2224/16227 ,  H01L2224/2518 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/92125 ,  H01L2225/1023 ,  H01L2225/1035 ,  H01L2225/1041 ,  H01L2225/1058 ,  H01L2924/1421 ,  H01L2924/1431 ,  H01L2924/1434 ,  H01L2924/18161 ,  H01L2924/18162 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/19106

Abstract: Packages including an embedded die with through silicon vias (TSVs) are described. In an embodiment, a first level die including TSVs is embedded between a first redistribution layer (RDL) and a second RDL, and a second level die is mounted on a top side of the first redistribution layer. In an embodiment, the first level die is an active die, less than 50 μm thick.

Abstract translation: 描述了包括通过硅通孔（TSV）的嵌入式裸片的封装。 在一个实施例中，包括TSV的第一级裸片被嵌入在第一重分配层（RDL）和第二RDL之间，并且第二级管芯安装在第一再分布层的顶侧。 在一个实施例中，第一级模具是小于50μm厚的有源管芯。

公开(公告)号：US20240014178A1

公开(公告)日：2024-01-11

申请号：US18348641

申请日：2023-07-07

Applicant: Apple Inc.

Inventor： Sanjay Dabral ,  Jun Zhai ,  Kwan-Yu Lai ,  Kunzhong Hu ,  Vidhya Ramachandran

IPC: H01L25/065 ,  H01L21/56 ,  H01L21/768 ,  H01L21/78 ,  H01L21/66 ,  H01L23/48 ,  H01L23/60 ,  H01L23/00 ,  H01L25/00

CPC classification number: H01L25/0657 ,  H01L21/561 ,  H01L21/568 ,  H01L21/76897 ,  H01L21/78 ,  H01L22/32 ,  H01L23/481 ,  H01L23/60 ,  H01L24/96 ,  H01L25/50 ,  H01L2224/95001 ,  H01L2225/06524 ,  H01L2225/06541 ,  H01L2225/06596 ,  H01L2924/30205

Abstract: Stitched die packaging techniques and structures are described in which reconstituted chips are formed using wafer reconstitution and die-stitching techniques. In an embodiment, a chip includes a reconstituted chip-level back end of the line (BEOL) build-up structure to connect a die set embedded in an inorganic gap fill material.

公开(公告)号：US11735567B2

公开(公告)日：2023-08-22

申请号：US17484188

申请日：2021-09-24

Applicant: Apple Inc.

Inventor： Sanjay Dabral ,  Jun Zhai ,  Kwan-Yu Lai ,  Kunzhong Hu ,  Vidhya Ramachandran

IPC: H01L25/065 ,  H01L21/56 ,  H01L21/768 ,  H01L21/78 ,  H01L21/66 ,  H01L23/48 ,  H01L23/60 ,  H01L23/00 ,  H01L25/00

CPC classification number: H01L25/0657 ,  H01L21/561 ,  H01L21/568 ,  H01L21/76897 ,  H01L21/78 ,  H01L22/32 ,  H01L23/481 ,  H01L23/60 ,  H01L24/96 ,  H01L25/50 ,  H01L2224/95001 ,  H01L2225/06524 ,  H01L2225/06541 ,  H01L2225/06596 ,  H01L2924/30205

Abstract: Stitched die packaging techniques and structures are described in which reconstituted chips are formed using wafer reconstitution and die-stitching techniques. In an embodiment, a chip includes a reconstituted chip-level back end of the line (BEOL) build-up structure to connect a die set embedded in an inorganic gap fill material.

公开(公告)号：US20230245988A1

公开(公告)日：2023-08-03

申请号：US18058006

申请日：2022-11-22

Applicant: Apple Inc.

Inventor： Kwan-Yu Lai ,  Kunzhong Hu ,  Jun Zhai ,  Young Doo Jeon

IPC: H01L23/00

CPC classification number: H01L24/11 ,  H01L24/73 ,  H01L24/13 ,  H01L24/20 ,  H01L24/19 ,  H01L24/14 ,  H01L2224/73101 ,  H01L2224/2101 ,  H01L2224/2105 ,  H01L2224/211 ,  H01L2224/214 ,  H01L2224/19 ,  H01L2224/11002 ,  H01L2224/11916 ,  H01L2224/11462 ,  H01L2224/11849 ,  H01L2224/1184 ,  H01L2224/14131 ,  H01L2224/14133 ,  H01L2224/13005 ,  H01L2224/13014 ,  H01L2224/13018 ,  H01L2224/13075 ,  H01L2224/13541 ,  H01L2224/13552 ,  H01L2224/13575 ,  H01L2924/35121

Abstract: Die reconstitution methods and dies with reconstituted contact bumps are described. In an embodiment, a die reconstitution method includes reconstituting a plurality of dies including first contact bumps of a first type, partially removing the first contact bumps, and forming second contact bumps of a second type on top of the partially removed first contact bumps, where the second type is different than the first type.

公开(公告)号：US11056373B2

公开(公告)日：2021-07-06

申请号：US14918189

申请日：2015-10-20

Applicant: Apple Inc.

Inventor： Jun Zhai ,  Kwan-Yu Lai ,  Kunzhong Hu

IPC: H01L23/538 ,  H01L21/56 ,  H01L25/065 ,  H01L21/683 ,  H01L23/00 ,  H01L25/03 ,  H01L25/00 ,  H01L23/31 ,  H01L23/498

Abstract: Semiconductor packages and fan out die stacking processes are described. In an embodiment, a package includes a first level die and a row of conductive pillars protruding from a front side of the first level die. A second level active die is attached to the front side of the first level die, and a redistribution layer (RDL) is formed on an in electrical contact with the row of conductive pillars and a front side of the second level active die.

公开(公告)号：US20200176419A1

公开(公告)日：2020-06-04

申请号：US16503806

申请日：2019-07-05

Applicant: Apple Inc.

Inventor： Sanjay Dabral ,  Jun Zhai ,  Kwan-Yu Lai ,  Kunzhong Hu ,  Vidhya Ramachandran

IPC: H01L25/065 ,  H01L21/66 ,  H01L23/48 ,  H01L23/60 ,  H01L21/768 ,  H01L21/56 ,  H01L21/78 ,  H01L23/00 ,  H01L25/00

Abstract: Stitched die packaging techniques and structures are described in which reconstituted chips are formed using wafer reconstitution and die-stitching techniques. In an embodiment, a chip including a reconstituted chip-level back endo of the line (BEOL) build-up structure to connect a die set embedded in an inorganic gap fill material.

公开(公告)号：US20190051449A1

公开(公告)日：2019-02-14

申请号：US16160998

申请日：2018-10-15

Applicant: Apple Inc.

Inventor： David P. Cappabianca ,  Zhitao Cao ,  Kwan-Yu Lai

IPC: H01F27/28 ,  H01F41/10 ,  H01F27/32 ,  H01F27/29 ,  H05K1/18

Abstract: An inductive device is disclosed, including a first wire coupled to a first terminal and to a second terminal, a non-conductive material surrounding the first wire, and a magnetic film. The non-conductive material spans the region from the first terminal to the second terminal. The magnetic film surrounds at least a portion of the non-conductive material between the first terminal and the second terminal. The first wire has a first amount of inductance.