公开(公告)号：US11993729B2

公开(公告)日：2024-05-28

申请号：US16765665

申请日：2018-11-12

Applicant: BASF SE

Inventor： Christian Daeschlein ,  Max Siebert ,  Yongqing Lan ,  Michael Lauter ,  Sheik Ansar Usman Ibrahim ,  Reza M Golzarian ,  Te Yu Wei ,  Haci Osman Guevenc ,  Julian Proelss ,  Leonardus Leunissen

IPC: C09G1/02 ,  H01L21/321

CPC classification number: C09G1/02 ,  H01L21/3212

Abstract: The presently claimed subject matter is directed to a chemical mechanical polishing (CMP) composition comprising inorganic particles, at least one organic compound comprising an amino group and/or at least one acid group (Y), potassium persulfate, at least one corrosion inhibitor and an aqueous medium for polishing substrates of the semiconductor industry comprising cobalt and/or a cobalt alloy and TiN and/or TaN.

公开(公告)号：US20240002698A1

公开(公告)日：2024-01-04

申请号：US18368581

申请日：2023-09-15

Applicant: BASF SE

Inventor： Haci Osman Guevenc ,  Michael Lauter ,  Te Yu Wei ,  Wei Lan Chiu ,  Reza M. Golzarian ,  Julian Proelss ,  Leonardus Leunissen

IPC: C09G1/02 ,  H01L21/321

CPC classification number: C09G1/02 ,  H01L21/3212

Abstract: The presently claimed invention relates to a chemical-mechanical polishing (CMP) composition and chemical-mechanical polishing (CMP) methods. The presently claimed invention particularly relates to a composition and process for chemical-mechanical polishing of substrates containing copper and ruthenium, specifically, semiconductor substrates containing copper and ruthenium.

公开(公告)号：US20230416570A1

公开(公告)日：2023-12-28

申请号：US18368032

申请日：2023-09-14

Applicant: BASF SE

Inventor： Haci Osman GUEVENC ,  Michael Lauter ,  Te Yu Wei ,  Wei Lan Chiu ,  Reza M. Golzarian ,  Julian Proelss ,  Leonardus Leunissen

IPC: C09G1/02 ,  C09K3/14 ,  H01L21/321

CPC classification number: C09G1/02 ,  H01L21/3212 ,  C09K3/1463

Abstract: The presently claimed invention relates to a chemical-mechanical polishing (CMP) composition and chemical-mechanical polishing (CMP) methods. The presently claimed invention particularly relates to a composition and process for chemical-mechanical polishing of substrates containing copper and ruthenium, specifically, semiconductor substrates containing copper and ruthenium.

公开(公告)号：US11168239B2

公开(公告)日：2021-11-09

申请号：US16860793

申请日：2020-04-28

Applicant: BASF SE

Inventor： Robert Reichardt ,  Martin Kaller ,  Michael Lauter ,  Yuzhuo Li ,  Andreas Klipp

IPC: H01L21/461 ,  H01L21/321 ,  H01L21/306 ,  H01L21/304 ,  H01L21/02 ,  C09K3/14 ,  C09G1/04 ,  C09G1/02 ,  C09G1/00

Abstract: A chemical-mechanical polishing (CMP) composition is provided comprising (A) one or more compounds selected from the group of benzotriazole derivatives which act as corrosion inhibitors and (B) inorganic particles, organic particles, or a composite or mixture thereof. The invention also relates to the use of certain compounds selected from the group of benzotriazole derivatives as corrosion inhibitors, especially for increasing the selectivity of a chemical mechanical polishing (CMP) composition for the removal of tantalum or tantalum nitride from a substrate for the manufacture of a semiconductor device in the presence of copper on said substrate.

公开(公告)号：US10738219B2

公开(公告)日：2020-08-11

申请号：US15538313

申请日：2015-12-16

Applicant: BASF SE

Inventor： Robert Reichardt ,  Max Siebert ,  Yongqing Lan ,  Michael Lauter ,  Sheik Ansar Usman Ibrahim ,  Reza M Golzarian ,  Haci Osman Guevenc ,  Julian Proelss ,  Leonardus Leunissen

IPC: H01L21/321 ,  H01L21/306 ,  H01L21/304 ,  H01L21/302 ,  C09K3/14 ,  C09G1/04 ,  C09G1/02 ,  C09G1/00 ,  C09D7/63 ,  C09D5/00 ,  C09D133/08 ,  C08K5/5435 ,  B24B37/04

Abstract: Use of a chemical mechanical polishing (CMP) composition for polishing of cobalt and/or co-balt alloy comprising substrates Abstract Use of a chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) comprising (i) cobalt and/or (ii) a cobalt alloy, wherein the CMP composition (Q) comprises (A) Inorganic particles (B) a substituted tetrazole derivative of the general formula (I), wherein R1 is H, hydroxy, alkyl, aryl, alkylaryl, amino, carboxyl, alkylcarboxyl, thio or alkylthio. (C) at least one amino acid (D) at least one oxidizer, (E) an aqueous medium and wherein the CMP composition (Q) has a pH of from 7 to 10.

公开(公告)号：US10647900B2

公开(公告)日：2020-05-12

申请号：US14905703

申请日：2014-07-01

Applicant: BASF SE

Inventor： Robert Reichardt ,  Martin Kaller ,  Michael Lauter ,  Yuzhuo Li ,  Andreas Klipp

IPC: C09G1/00 ,  C09G1/02 ,  C09G1/04 ,  C09K3/14 ,  H01L21/02 ,  H01L21/304 ,  H01L21/306 ,  H01L21/321 ,  H01L21/461

Abstract: A chemical-mechanical polishing (CMP) composition is provided comprising (A) one or more compounds selected from the group of benzotriazole derivatives which act as corrosion inhibitors and (B) inorganic particles, organic particles, or a composite or mixture thereof. The invention also relates to the use of certain compounds selected from the group of benzotriazole derivatives as corrosion inhibitors, especially for increasing the selectivity of a chemical mechanical polishing (CMP) composition for the removal of tantalum or tantalum nitride from a substrate for the manufacture of a semiconductor device in the presence of copper on said substrate.

公开(公告)号：US09777192B2

公开(公告)日：2017-10-03

申请号：US14377648

申请日：2013-01-25

Applicant: BASF SE

Inventor： Yuzhuo Li ,  Bastian Marten Noller ,  Michael Lauter ,  Roland Lange

IPC: C09G1/02 ,  H01L21/3105 ,  C09K3/14 ,  H01L21/306 ,  C09G1/18

CPC classification number: C09G1/02 ,  C09G1/18 ,  C09K3/1463 ,  H01L21/30625 ,  H01L21/31053

Abstract: Chemical mechanical polishing composition is provided. The composition comprises (A) inorganic particles, organic particles, or a mixture or composite thereof, (B) a protein, and (C) an aqueous medium.