公开(公告)号：US09458415B2

公开(公告)日：2016-10-04

申请号：US14376978

申请日：2013-01-24

Applicant: BASF SE

Inventor： Yuzhuo Li ,  Shyam Sundar Venkataraman ,  Mingjie Zhong

IPC: C11D7/34 ,  C11D3/34 ,  H01L21/02 ,  C11D3/20 ,  C11D7/26 ,  C11D11/00 ,  C11D3/37

CPC classification number: C11D3/3427 ,  C11D1/722 ,  C11D3/2065 ,  C11D3/2082 ,  C11D3/2086 ,  C11D3/349 ,  C11D3/3757 ,  C11D7/261 ,  C11D7/268 ,  C11D7/34 ,  C11D11/0047 ,  C11D11/0064 ,  H01L21/02074

Abstract: A post chemical-mechanical-polishing (post-CMP) cleaning composition comprising: (A) at least one compound comprising at least one thiol (—SH), thioether (—SR1) or thiocarbonyl (>C═S) group, wherein R1 is alkyl, aryl, alkylaryl or arylalkyl, (B) at least one sugar alcohol which contains at least three hydroxyl (—OH) groups and does not comprise any carboxylic acid (—COOH) or carboxylate (—COO—) groups, and (C) an aqueous medium.

Abstract translation: 后化学机械抛光（CMP后）清洁组合物，其包含：（A）至少一种包含至少一种硫醇（-SH），硫醚（-SR1）或硫代羰基（> C = S））的化合物，其中R1 （B）至少一种含有至少三个羟基（-OH）基团并且不包含任何羧酸（-COOH）或羧酸酯（-COO-）基团的糖醇和（B） C）水性介质。

公开(公告)号：US20150018261A1

公开(公告)日：2015-01-15

申请号：US14376978

申请日：2013-01-24

Applicant: BASF SE

Inventor： Yuzhuo Li ,  Shyam Sundar Venkataraman ,  Mingjie Zhong

IPC: C11D3/34 ,  C11D11/00 ,  C11D3/20

CPC classification number: C11D3/3427 ,  C11D1/722 ,  C11D3/2065 ,  C11D3/2082 ,  C11D3/2086 ,  C11D3/349 ,  C11D3/3757 ,  C11D7/261 ,  C11D7/268 ,  C11D7/34 ,  C11D11/0047 ,  C11D11/0064 ,  H01L21/02074

Abstract: A post chemical-mechanical-polishing (post-CMP) cleaning composition comprising: (A) at least one compound comprising at least one thiol (—SH), thioether (—SR1) or thiocarbonyl (>C═S) group, wherein R1 is alkyl, aryl, alkylaryl or arylalkyl, (B) at least one sugar alcohol which contains at least three hydroxyl (—OH) groups and does not comprise any carboxylic acid (—COOH) or carboxylate (—COO—) groups, and (C) an aqueous medium.

Abstract translation: 后化学机械抛光（CMP后）清洁组合物，其包含：（A）至少一种包含至少一种硫醇（-SH），硫醚（-SR1）或硫代羰基（> C = S））的化合物，其中R1 （B）至少一种含有至少三个羟基（-OH）基团并且不包含任何羧酸（-COOH）或羧酸酯（-COO-）基团的糖醇和（B） C）水性介质。

公开(公告)号：US20200255713A1

公开(公告)日：2020-08-13

申请号：US16860793

申请日：2020-04-28

Applicant: BASF SE

Inventor： Robert REICHARDT ,  Martin Kaller ,  Michael Lauter ,  Yuzhuo Li ,  Andreas Klipp

IPC: C09K3/14 ,  H01L21/304 ,  H01L21/306 ,  H01L21/461 ,  H01L21/321 ,  C09G1/02

Abstract: A chemical-mechanical polishing (CMP) composition is provided comprising (A) one or more compounds selected from the group of benzotriazole derivatives which act as corrosion inhibitors and (B) inorganic particles, organic particles, or a composite or mixture thereof. The invention also relates to the use of certain compounds selected from the group of benzotriazole derivatives as corrosion inhibitors, especially for increasing the selectivity of a chemical mechanical polishing (CMP) composition for the removal of tantalum or tantalum nitride from a substrate for the manufacture of a semiconductor device in the presence of copper on said substrate.

公开(公告)号：US11168239B2

公开(公告)日：2021-11-09

申请号：US16860793

申请日：2020-04-28

Applicant: BASF SE

Inventor： Robert Reichardt ,  Martin Kaller ,  Michael Lauter ,  Yuzhuo Li ,  Andreas Klipp

IPC: H01L21/461 ,  H01L21/321 ,  H01L21/306 ,  H01L21/304 ,  H01L21/02 ,  C09K3/14 ,  C09G1/04 ,  C09G1/02 ,  C09G1/00

Abstract: A chemical-mechanical polishing (CMP) composition is provided comprising (A) one or more compounds selected from the group of benzotriazole derivatives which act as corrosion inhibitors and (B) inorganic particles, organic particles, or a composite or mixture thereof. The invention also relates to the use of certain compounds selected from the group of benzotriazole derivatives as corrosion inhibitors, especially for increasing the selectivity of a chemical mechanical polishing (CMP) composition for the removal of tantalum or tantalum nitride from a substrate for the manufacture of a semiconductor device in the presence of copper on said substrate.

公开(公告)号：US10647900B2

公开(公告)日：2020-05-12

申请号：US14905703

申请日：2014-07-01

Applicant: BASF SE

Inventor： Robert Reichardt ,  Martin Kaller ,  Michael Lauter ,  Yuzhuo Li ,  Andreas Klipp

IPC: C09G1/00 ,  C09G1/02 ,  C09G1/04 ,  C09K3/14 ,  H01L21/02 ,  H01L21/304 ,  H01L21/306 ,  H01L21/321 ,  H01L21/461

Abstract: A chemical-mechanical polishing (CMP) composition is provided comprising (A) one or more compounds selected from the group of benzotriazole derivatives which act as corrosion inhibitors and (B) inorganic particles, organic particles, or a composite or mixture thereof. The invention also relates to the use of certain compounds selected from the group of benzotriazole derivatives as corrosion inhibitors, especially for increasing the selectivity of a chemical mechanical polishing (CMP) composition for the removal of tantalum or tantalum nitride from a substrate for the manufacture of a semiconductor device in the presence of copper on said substrate.

公开(公告)号：US09777192B2

公开(公告)日：2017-10-03

申请号：US14377648

申请日：2013-01-25

Applicant: BASF SE

Inventor： Yuzhuo Li ,  Bastian Marten Noller ,  Michael Lauter ,  Roland Lange

IPC: C09G1/02 ,  H01L21/3105 ,  C09K3/14 ,  H01L21/306 ,  C09G1/18

CPC classification number: C09G1/02 ,  C09G1/18 ,  C09K3/1463 ,  H01L21/30625 ,  H01L21/31053

Abstract: Chemical mechanical polishing composition is provided. The composition comprises (A) inorganic particles, organic particles, or a mixture or composite thereof, (B) a protein, and (C) an aqueous medium.

公开(公告)号：US20150175845A1

公开(公告)日：2015-06-25

申请号：US14402975

申请日：2013-05-21

Applicant: BASF SE

Inventor： Yuzhuo Li ,  Bastian Marten Noller ,  Christophe Gillot ,  Diana Franz

IPC: C09G1/02 ,  H01L21/306

CPC classification number: C09G1/02 ,  B81C2201/0121 ,  B81C2201/0123 ,  B81C2201/0126 ,  H01L21/02024 ,  H01L21/302 ,  H01L21/304 ,  H01L21/30625 ,  H01L21/3212 ,  H01L21/461

Abstract: A process for the manufacture of semiconductor devices comprising the chemical-mechanical polishing of a substrate or layer containing at least one III-V material in the presence of a chemical-mechanical polishing composition (Q1) comprising (A) inorganic particles, organic particles, or a mixture or composite thereof, (B) at least one amphiphilic non-ionic surfactant having (b1) at least one hydrophobic group; and (b2) at least one hydrophilic group selected from the group consisting of polyoxyalkylene groups comprising (b22) oxyalkylene monomer units other than oxyethylene monomer units; and (M) an aqueous medium.

Abstract translation: 一种用于制造半导体器件的方法，包括在化学机械抛光组合物（Q1）的存在下对包含至少一种III-V材料的基底或层进行化学机械抛光，所述化学机械抛光组合物包含（A）无机颗粒，有机颗粒， 或其混合物或复合物，（B）至少一种具有（b1）至少一个疏水基团的两亲性非离子表面活性剂; 和（b2）至少一种选自包含（b22）氧化烯单体单元以外的氧化烯单体单元的聚氧化烯基的亲水基团; 和（M）水性介质。

公开(公告)号：US10214663B2

公开(公告)日：2019-02-26

申请号：US15502932

申请日：2015-07-24

Applicant: BASF SE

Inventor： Yongqing Lan ,  Bastian Marten Noller ,  Yuzhuo Li ,  Liang Jiang ,  Daniel Kwo-Hung Shen ,  Reza Golzarian

IPC: C09G1/02 ,  C09K3/14 ,  H01L21/321

Abstract: Described are a chemical-mechanical polishing (CMP) composition comprising abrasive particles in the form of organic/inorganic composite particles as well as the use of said composite particles as abrasive particles in a CMP composition and processes for the manufacture of a semiconductor device comprising chemical mechanical polishing of a substrate in the presence said CMP composition.

公开(公告)号：US09416298B2

公开(公告)日：2016-08-16

申请号：US14402975

申请日：2013-05-21

Applicant: BASF SE

Inventor： Yuzhuo Li ,  Bastian Marten Noller ,  Christophe Gillot ,  Diana Franz

IPC: C09G1/02 ,  H01L21/304 ,  H01L21/302 ,  H01L21/321 ,  H01L21/461 ,  H01L21/306 ,  H01L21/02

CPC classification number: C09G1/02 ,  B81C2201/0121 ,  B81C2201/0123 ,  B81C2201/0126 ,  H01L21/02024 ,  H01L21/302 ,  H01L21/304 ,  H01L21/30625 ,  H01L21/3212 ,  H01L21/461

Abstract: A process for the manufacture of semiconductor devices comprising the chemical-mechanical polishing of a substrate or layer containing at least one III-V material in the presence of a chemical-mechanical polishing composition (Q1) comprising (A) inorganic particles, organic particles, or a mixture or composite thereof, (B) at least one amphiphilic non-ionic surfactant having (b1) at least one hydrophobic group; and (b2) at least one hydrophilic group selected from the group consisting of polyoxyalkylene groups comprising (b22) oxyalkylene monomer units other than oxyethylene monomer units; and (M) an aqueous medium.

Abstract translation: 一种用于制造半导体器件的方法，包括在化学机械抛光组合物（Q1）的存在下对包含至少一种III-V材料的基底或层进行化学机械抛光，所述化学机械抛光组合物包含（A）无机颗粒，有机颗粒， 或其混合物或复合物，（B）至少一种具有（b1）至少一个疏水基团的两亲性非离子表面活性剂; 和（b2）至少一种选自包含（b22）氧化烯单体单元以外的氧化烯单体单元的聚氧化烯基的亲水基团; 和（M）水性介质。

公开(公告)号：US20160160083A1

公开(公告)日：2016-06-09

申请号：US14905635

申请日：2014-07-08

Applicant: BASF SE

Inventor： Michael LAUTER ,  Yuzhuo Li ,  Bastian Marten NOLLER ,  Roland LANGE ,  Robert REICHARDT ,  Yongqing LAN ,  Volodymyr BOYKO ,  Alexander KRAUS ,  Joachim Von SEYERL ,  Sheik Ansar USMAN IBRAHIM ,  Aax SIEBERT ,  Kristine HARTNAGEL ,  Joachim DENGLER ,  Nina Susanne HILLESHEIM

IPC: C09G1/02 ,  H01L21/3105 ,  H01L21/306

CPC classification number: C09G1/02 ,  C09D5/027 ,  C09D7/65 ,  C09K3/1463 ,  H01L21/30625 ,  H01L21/31053

Abstract: Described is a chemical-mechanical polishing (CMP) composition comprising abrasive particles containing ceria.

Abstract translation: 描述了包含含有二氧化铈的磨料颗粒的化学机械抛光（CMP）组合物。