公开(公告)号：US10899945B2

公开(公告)日：2021-01-26

申请号：US15751612

申请日：2016-08-09

Applicant: BASF SE

Inventor： Robert Reichardt ,  Max Siebert ,  Yongqing Lan ,  Michael Lauter ,  Sheik Ansar Usman Ibrahim ,  Reza M. Golzarian ,  Te Yu Wei ,  Haci Osman Guevenc ,  Julian Proelss ,  Leonardus Leunissen

IPC: C09G1/02 ,  C09G1/04 ,  C09K3/14 ,  H01L21/306 ,  H01L21/321 ,  H01L21/461

Abstract: Use of a chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) comprising (i) cobalt and/or (ii) a cobalt alloy and (iii) Ti N and/or TaN, wherein the CMP composition (Q) comprises (E) Inorganic particles (F) at least one organic compound comprising an amino-group and an acid group (Y), wherein said compound comprises n amino groups and at least n+1 acidic protons, wherein n is a integer≥1. (G) at least one oxidizer in an amount of from 0.2 to 2.5 wt.-% based on the total weight of the respective CMP composition, (H) an aqueous medium wherein the CMP composition (Q) has a pH of more than 6 and less than 9.

公开(公告)号：US20200255713A1

公开(公告)日：2020-08-13

申请号：US16860793

申请日：2020-04-28

Applicant: BASF SE

Inventor： Robert REICHARDT ,  Martin Kaller ,  Michael Lauter ,  Yuzhuo Li ,  Andreas Klipp

IPC: C09K3/14 ,  H01L21/304 ,  H01L21/306 ,  H01L21/461 ,  H01L21/321 ,  C09G1/02

Abstract: A chemical-mechanical polishing (CMP) composition is provided comprising (A) one or more compounds selected from the group of benzotriazole derivatives which act as corrosion inhibitors and (B) inorganic particles, organic particles, or a composite or mixture thereof. The invention also relates to the use of certain compounds selected from the group of benzotriazole derivatives as corrosion inhibitors, especially for increasing the selectivity of a chemical mechanical polishing (CMP) composition for the removal of tantalum or tantalum nitride from a substrate for the manufacture of a semiconductor device in the presence of copper on said substrate.

公开(公告)号：US20150017454A1

公开(公告)日：2015-01-15

申请号：US14377648

申请日：2013-01-25

Applicant: BASF SE

Inventor： Yuzhuo Li ,  Bastian Marten Noller ,  Michael Lauter ,  Roland Lange

IPC: C09G1/02 ,  H01L21/306 ,  C09K3/14

CPC classification number: C09G1/02 ,  C09G1/18 ,  C09K3/1463 ,  H01L21/30625 ,  H01L21/31053

Abstract: Chemical mechanical polishing composition is provided. The composition comprises (A) inorganic particles, organic particles, or a mixture or composite thereof, (B) a protein, and (C) an aqueous medium.

Abstract translation: 提供化学机械抛光组合物。 组合物包含（A）无机颗粒，有机颗粒或其混合物或复合物，（B）蛋白质和（C）水性介质。

公开(公告)号：US11725117B2

公开(公告)日：2023-08-15

申请号：US17312821

申请日：2019-12-11

Applicant: BASF SE

Inventor： Haci Osman Guevenc ,  Michael Lauter ,  Te Yu Wei ,  Wei Lan Chiu ,  Reza M. Golzarian ,  Julian Proelss ,  Leonardus Leunissen

IPC: C09G1/02 ,  H01L21/321 ,  C09K3/14

CPC classification number: C09G1/02 ,  H01L21/3212 ,  C09K3/1463

Abstract: The presently claimed invention relates to a chemical-mechanical polishing (CMP) composition and chemical-mechanical polishing (CMP) methods. The presently claimed invention particularly relates to a composition and process for chemical-mechanical polishing of substrates containing copper and ruthenium, specifically, semiconductor substrates containing copper and ruthenium.

公开(公告)号：US11286402B2

公开(公告)日：2022-03-29

申请号：US15538334

申请日：2015-12-11

Applicant: BASF SE

Inventor： Robert Reichardt ,  Max Siebert ,  Yongqing Lan ,  Michael Lauter ,  Sheik Ansar Usman Ibrahim ,  Reza Golzarian ,  Haci Osman Guevenc ,  Julian Proelss ,  Leonardus Leunissen

IPC: C09G1/02 ,  C09K13/00 ,  H01L21/461 ,  C09G1/04

Abstract: Use of a chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) comprising (i) cobalt and/or (ii) a cobalt alloy, wherein the CMP composition (Q) comprises (A) Inorganic particles (B) a triazine derivative of the general formula (I) wherein R1, R2, R3, R4, R5 and R6 are independently from each other H, methyl, ethyl, propyl, butyl, pentyl, C2-C10-alkylcarboxylic acid, hydroxymethyl, vinyl or allyl (C) at least one amino acid, (D) at least one oxidizer (E) an aqueous medium and wherein the CMP composition (Q) has a pH of from 7 to 10.

公开(公告)号：US10227506B2

公开(公告)日：2019-03-12

申请号：US15536447

申请日：2015-12-04

Applicant: BASF SE

Inventor： Max Siebert ,  Michael Lauter ,  Yongqing Lan ,  Robert Reichardt ,  Alexandra Muench ,  Manuel Six ,  Gerald Daniel ,  Bastian Marten Noller ,  Kevin Huang ,  Sheik Ansar Usman Ibrahim

IPC: C09G1/04 ,  C09G1/02 ,  C09K13/00 ,  H01L21/304 ,  H01L21/461

Abstract: Disclosed herein is a chemical mechanical polishing (CMP) composition (Q) containing (A) inorganic particles, (B) a compound of general formula (I) below, and (C) an aqueous medium, in which the composition (Q) has a pH of from 2 to 6.

公开(公告)号：US11264250B2

公开(公告)日：2022-03-01

申请号：US16094381

申请日：2016-04-27

Applicant: BASF SE

Inventor： Robert Reichardt ,  Max Siebert ,  Yongqing Lan ,  Michael Lauter ,  Sheik Ansar Usman Ibrahim ,  Reza M Golzarian ,  Haci Osman Guevenc ,  Julian Proelss ,  Leonardus Leunissen

IPC: C09G1/02 ,  H01L21/321 ,  C09K3/14

Abstract: Use of a chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) comprising (i) cobalt and/or (ii) a cobalt alloy, wherein the CMP composition (Q) comprises (A) Inorganic particles (B) an anionic surfactant of the general formula (I) R-S wherein R is C5-C20-alkyl, C5-C20-alkenyl, C5-C20-alkylacyl or C5-C20-alkenylacyl and S is a sulfonic acid derivative, an amino acid derivative or a phosphoric acid derivative or salts or mixtures thereof (C) at least one amino acid, (D) at least one oxidizer (E) an aqueous medium and wherein the CMP composition (Q) has a pH of from 7 to 10.

公开(公告)号：US10570316B2

公开(公告)日：2020-02-25

申请号：US15325464

申请日：2015-07-14

Applicant: BASF SE

Inventor： Robert Reichardt ,  Max Siebert ,  Yongqing Lan ,  Michael Lauter ,  Haci Osman Guevenc ,  Julian Proelss ,  Sheik Ansar Usman Ibrahim ,  Reza Golzarian

IPC: C09G1/04

Abstract: A chemical mechanical polishing (CMP) composition (Q) comprising (A) Colloidal or fumed inorganic particles (A) or a mixture thereof in a total amount of from 0.0001 to 2.5 wt.-% based on the total weight of the respective CMP composition (B) at least one amino acid in a total amount of from 0.2 to 1 wt.-% based on the total weight of the respective CMP composition (C) at least one corrosion inhibitor in a total amount of from 0.001 to 0.02 wt.-% based on the total weight of the respective CMP composition (D) hydrogen peroxide as oxidizing agent in a total amount of from 0.0001 to 2 wt.-% based on the total amount of the respective CMP composition (E) aqueous medium wherein the CMP composition (Q) has a pH in the range of from 6 to 9.5.

公开(公告)号：US10385236B2

公开(公告)日：2019-08-20

申请号：US15538851

申请日：2015-12-22

Applicant: BASF SE

Inventor： Robert Reichardt ,  Max Siebert ,  Yongqing Lan ,  Michael Lauter ,  Sheik Ansar Usman Ibrahim ,  Reza Golzarian ,  Haci Osman Guevenc ,  Julian Proelss ,  Leonardus Leunissen

IPC: H01L21/461 ,  C09G1/02 ,  H01L21/306 ,  H01L21/321 ,  H01L21/302 ,  H01L21/304 ,  H01L21/463 ,  B24B37/20 ,  C09K3/14 ,  C23F3/06 ,  H01L21/768

Abstract: A chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) containing (i) cobalt and/or (ii) a cobalt alloy, wherein the CMP composition (Q) contains: (A) Inorganic particles, (B) a substituted aromatic compound with at least one carboxylic acid function as corrosion inhibitor, (C) at least one amino acid, (D) at least one oxidizer, (E) an aqueous medium, wherein the CMP composition (Q) has a pH of from 7 to 10.

公开(公告)号：US08980750B2

公开(公告)日：2015-03-17

申请号：US13933427

申请日：2013-07-02

Applicant: BASF SE

Inventor： Robert Reichardt ,  Yuzhuo Li ,  Michael Lauter ,  Wei Lan William Chiu

IPC: H01L21/302 ,  C09G1/02 ,  H01L21/306 ,  H01L21/321

CPC classification number: C09G1/02 ,  H01L21/30625 ,  H01L21/3212

Abstract: A chemical mechanical polishing (CMP) composition (Q) comprising (A) Inorganic particles, organic particles, or a mixture or composite thereof, wherein the particles are cocoon-shaped (B) a non-ionic surfactant, (C) a carbonate or hydrogen carbonate salt, (D) an alcohol, and (M) an aqueous medium.

Abstract translation: 化学机械抛光（CMP）组合物（Q），其包含（A）无机颗粒，有机颗粒或其混合物或复合物，其中所述颗粒是茧形的（B）非离子表面活性剂，（C）碳酸盐或 碳酸氢盐，（D）醇和（M）水性介质。