公开(公告)号：AT479131T

公开(公告)日：2010-09-15

申请号：AT08015849

申请日：2002-02-11

Applicant: BREWER SCIENCE INC

Inventor： ENOMOTO TOMOYUKI ,  MIZUSAWA KEN-ICHI ,  ARASE SHIN-YA ,  PULIGADDA RAMA

IPC: G03F7/004 ,  G03F7/11 ,  C08F18/00 ,  C08F18/16 ,  C08F220/12 ,  C08F220/22 ,  C08F220/28 ,  C09D133/16 ,  G03F7/038 ,  G03F7/09 ,  G03F7/26 ,  G03F7/40 ,  H01L21/027

Abstract: Anti-reflective coatings formed from polymers and having high etch rates are provided. Broadly, the coatings are formed from a polymer binder and a light attenuating compound. The polymer binder has halogen atoms bonded thereto, preferably to functional groups on the polymer binder rather than to the polymer backbone. Preferred polymer binders comprise acrylic polymers while it is preferred that the halogenated functional groups of the polymer binders be dihalogenated, and more preferably trihalogenated, with chlorine, fluorine, or bromine atoms.

公开(公告)号：DE60320292D1

公开(公告)日：2008-05-21

申请号：DE60320292

申请日：2003-09-19

Applicant: BREWER SCIENCE INC

Inventor： ENOMOTO TOMOYUKI ,  NAKAYAMA KEISUKE ,  PULIGADDA RAMA

IPC: H01L23/29 ,  B32B27/32 ,  G03F20060101 ,  G03F7/004 ,  G03F7/09 ,  H01L21/44

Abstract: The present invention relates to an anti-reflective coating composition characterized by comprising a resin made from triazine compounds having at least two nitrogen atoms substituted a hydroxymethyl group and/or an alkoxymethyl group, and a light absorbing compound and/or a light absorbing resin. The present invention offers an anti-reflective coating composition for the anti-reflective coating having high light absorption property of the light used for the lithography process in the preparation of semiconductor device, showing high reflective light preventing effect, being used at thinner film thickness more than before, and having greater dry etching rate in comparison to photoresist layer.

公开(公告)号：AU2003294563A1

公开(公告)日：2004-06-23

申请号：AU2003294563

申请日：2003-12-02

Applicant: BREWER SCIENCE INC

Inventor： PULIGADDA RAMA ,  LAMB JAMES E ,  FLAIM TONY D

IPC: H01L21/312 ,  B05D3/02 ,  B32B17/10 ,  C08F20/26 ,  C08F20/32 ,  C08F220/28 ,  C08G59/32 ,  C08J7/04 ,  C09D163/00 ,  G03F7/09 ,  G03F7/11 ,  H01L20060101 ,  H01L21/027 ,  H01L21/311

Abstract: Anti-reflective compositions and methods of using those compositions with low dielectric constant materials are provided. In one embodiment, the compositions include polymers comprising recurring monomers having unreacted ring members. In another embodiment, the polymers further comprise recurring monomers comprising ring members reacted with a light attenuating compound so as to open the ring. The compositions can be applied to dielectric layers so as to minimize or prevent reflection during the dual damascene process while simultaneously blocking via or photoresist poisoning which commonly occurs when organic anti-reflective coatings are applied to low dielectric constant layers.

公开(公告)号：SG11202005465SA

公开(公告)日：2020-07-29

申请号：SG11202005465S

申请日：2018-12-21

Applicant: BREWER SCIENCE INC

Inventor： LIU XIAO ,  WU QI ,  PULIGADDA RAMA ,  BAI DONGSHUN ,  HUANG BARON

IPC: B32B7/06 ,  B32B27/20 ,  B32B27/28 ,  C09J5/04 ,  C09J11/06 ,  C09J171/08 ,  H01L21/18 ,  H01L21/268 ,  H01L23/00

Abstract: Novel thermoplastic polyhydroxyether-based compositions for use as a laser-releasable composition for temporary bonding and laser debonding processes are provided. The inventive compositions can be debonded using various UV lasers, leaving behind little to no debris. The layers formed from these compositions possess good thermal stabilities and are soluble in commonly-used organic solvents (e.g., cyclopentanone). The compositions can also be used as build-up layers for RDL formation.

公开(公告)号：DE60236210D1

公开(公告)日：2010-06-10

申请号：DE60236210

申请日：2002-02-11

Applicant: BREWER SCIENCE INC

Inventor： ENOMOTO TOMOYUKI ,  MIZUSAWA KEN-ICHI ,  ARASE SHIN-YA ,  PULIGADDA RAMA

IPC: G03F7/004 ,  G03F7/11 ,  C08F18/00 ,  C08F18/16 ,  C08F220/12 ,  C08F220/22 ,  C08F220/28 ,  C09D133/16 ,  G03F7/038 ,  G03F7/09 ,  G03F7/26 ,  G03F7/40 ,  H01L21/027

Abstract: Anti-reflective coatings formed from polymers and having high etch rates are provided. Broadly, the coatings are formed from a polymer binder and a light attenuating compound. The polymer binder has halogen atoms bonded thereto, preferably to functional groups on the polymer binder rather than to the polymer backbone. Preferred polymer binders comprise acrylic polymers while it is preferred that the halogenated functional groups of the polymer binders be dihalogenated, and more preferably trihalogenated, with chlorine, fluorine, or bromine atoms.

公开(公告)号：DE60320292T2

公开(公告)日：2009-07-16

申请号：DE60320292

申请日：2003-09-19

Applicant: BREWER SCIENCE INC

Inventor： ENOMOTO TOMOYUKI ,  NAKAYAMA KEISUKE ,  PULIGADDA RAMA

IPC: H01L23/29 ,  B32B27/32 ,  G03F20060101 ,  G03F7/004 ,  G03F7/09 ,  H01L21/44

Abstract: The present invention relates to an anti-reflective coating composition characterized by comprising a resin made from triazine compounds having at least two nitrogen atoms substituted a hydroxymethyl group and/or an alkoxymethyl group, and a light absorbing compound and/or a light absorbing resin. The present invention offers an anti-reflective coating composition for the anti-reflective coating having high light absorption property of the light used for the lithography process in the preparation of semiconductor device, showing high reflective light preventing effect, being used at thinner film thickness more than before, and having greater dry etching rate in comparison to photoresist layer.

公开(公告)号：AT392011T

公开(公告)日：2008-04-15

申请号：AT03770384

申请日：2003-09-19

Applicant: BREWER SCIENCE INC

Inventor： ENOMOTO TOMOYUKI ,  NAKAYAMA KEISUKE ,  PULIGADDA RAMA

IPC: H01L23/29 ,  B32B27/32 ,  G03F20060101 ,  G03F7/004 ,  G03F7/09 ,  H01L21/44

Abstract: The present invention relates to an anti-reflective coating composition characterized by comprising a resin made from triazine compounds having at least two nitrogen atoms substituted a hydroxymethyl group and/or an alkoxymethyl group, and a light absorbing compound and/or a light absorbing resin. The present invention offers an anti-reflective coating composition for the anti-reflective coating having high light absorption property of the light used for the lithography process in the preparation of semiconductor device, showing high reflective light preventing effect, being used at thinner film thickness more than before, and having greater dry etching rate in comparison to photoresist layer.

公开(公告)号：SG10201509693YA

公开(公告)日：2015-12-30

申请号：SG10201509693Y

申请日：2011-08-05

Applicant: BREWER SCIENCE INC

Inventor： PULIGADDA RAMA ,  ZHONG XING-FU ,  FLAIM TONY D ,  MCCUTCHEON JEREMY

公开(公告)号：SG2014014922A

公开(公告)日：2014-07-30

申请号：SG2014014922

申请日：2011-08-05

Applicant: BREWER SCIENCE INC

Inventor： PULIGADDA RAMA ,  ZHONG XING-FU ,  FLAIM TONY D ,  MCCUTCHEON JEREMY

公开(公告)号：SG187739A1

公开(公告)日：2013-03-28

申请号：SG2013009121

申请日：2011-08-05

Applicant: BREWER SCIENCE INC

Inventor： PULIGADDA RAMA ,  ZHONG XING-FU ,  FLAIM TONY D ,  MCCUTCHEON JEREMY

Abstract: Multiple bonding layer schemes that temporarily join semiconductor substrates are provided. In the inventive bonding scheme, at least one of the layers is directly in contact with the semiconductor substrate and at least two layers within the scheme are in direct contact with one another. The present invention provides several processing options as the different layers within the multilayer structure perform specific functions. More importantly, it will improve performance of the thin-wafer handling solution by providing higher thermal stability, greater compatibility with harsh backside processing steps, protection of bumps on the front side of the wafer by encapsulation, lower stress in the debonding step, and fewer defects on the front side.