Abstract:
Novel polyketanil-based compositions for use as a laser-releasable composition for temporary bonding and laser debonding processes are provided. The inventive compositions can be debonded using various UV lasers, at wavelengths from about 300 nm to about 360 nm, leaving behind little to no debris. The layers formed from these compositions possess good thermal stabilities and are resistant to common solvents used in semiconductor processing. The compositions can also be used as build-up layers for redistribution layer formation.
Abstract:
The invention broadly relates to release layer compositions that enable thin wafer handling during microelectronics manufacturing. Preferred release layers are formed from compositions comprising a polyamic acid or polyimide dissolved or dispersed in a solvent system, followed by curing and/or solvent removal at about 250° C. to about 350° C. for less than about 10 minutes, yielding a thin film. This process forms the release compositions into polyimide release layers that can be used in temporary bonding processes, and laser debonded after the desired processing has been carried out.
Abstract:
Novel thermoplastic polyhydroxyether-based compositions for use as a laser-releasable composition for temporary bonding and laser debonding processes are provided. The inventive compositions can be debonded using various UV lasers, leaving behind little to no debris. The layers formed from these compositions possess good thermal stabilities and are soluble in commonly-used organic solvents (e.g., cyclopentanone). The compositions can also be used as build-up layers for RDL formation.
Abstract:
The invention broadly relates to release layer compositions that enable thin wafer handling during microelectronics manufacturing. Preferred release layers are formed from compositions comprising a polyamic acid or polyimide dissolved or dispersed in a solvent system, followed by curing and/or solvent removal at about 250°C to about 350°C for less than about 10 minutes, yielding a thin film. This process forms the release compositions into polyimide release layers that can be used in temporary bonding processes, and laser debonded after the desired processing has been carried out.
Abstract:
The invention broadly relates to release layer compositions that enable thin wafer handling during microelectronics manufacturing. Preferred release layers are formed from compositions comprising a polyamic acid or polyimide dissolved or dispersed in a solvent system, followed by curing and/or solvent removal at about 250° C. to about 350° C. for less than about 10 minutes, yielding a thin film. This process forms the release compositions into polyimide release layers that can be used in temporary bonding processes, and laser debonded after the desired processing has been carried out.