12.
    发明专利
    未知

    公开(公告)号:ID16901A

    公开(公告)日:1997-11-20

    申请号:ID971587

    申请日:1997-05-12

    Applicant: CABOT CORP

    Abstract: A polishing slurry for chemically mechanically polishing metal layers and films during the various stages of multilevel interconnect fabrication associated with integrated circuit manufacturing. The slurry includes an aqueous medium, an abrasive, an oxidizing agent, and an organic acid. The polishing slurry has been found to significantly lower or inhibit the silicon dioxide polishing rate, thus yielding enhanced selectivity. In addition, the polishing slurry is useful in providing effective polishing to metal layers at desired polishing rates while minimizing surface imperfections and defects. Also disclosed is a method for producing coplanar metal/insulator films on a substrate utilizing the slurry of the present invention and chemical mechanical polishing technique relating thereto.

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