公开(公告)号：JPH0344913A

公开(公告)日：1991-02-26

申请号：JP17916789

申请日：1989-07-13

Applicant: CANON KK

Inventor： AMAMIYA MITSUAKI ,  HARA SHINICHI ,  SAKAMOTO EIJI

IPC: H01L21/30 ,  G03F7/20 ,  H01L21/027 ,  H01L21/683

Abstract: PURPOSE:To suppress temperature rise of a substrate and to normally process the substrate by providing means for controlling pressure in a pressure reducing hole so that a contact thermal resistance between the substrate and a holding base shows a predetermined value. CONSTITUTION:A wafer chuck 6 is provided with a pressure reducing hole 11, which is connected to a pressure gauge 13 through a suction port 12, and also connected to a pump 17 and a gas cylinder 16a through gas regulating valves 15a, 15b. A signal of the gauge 13a is sent to a controller 14a through a CPU 20 to control the pressure of the hole 11. When a wafer 5 is exposed, gas in the hole 11 is sucked, and the wafer 5 is held by the chuck 6. Pressure in the hole 11 is controlled so that contact thermal resistance between the wafer 5 and the chuck 6 shows a predetermined value. Thus, the temperature rise of the wafer can be suppressed.

公开(公告)号：JPS6218027A

公开(公告)日：1987-01-27

申请号：JP15611385

申请日：1985-07-17

Applicant: CANON KK

Inventor： AMAMIYA MITSUAKI

IPC: G03F7/20 ,  H01L21/027 ,  H01L21/30

Abstract: PURPOSE:To measure the sensitivity, etc., of a resist to X-rays and to ensure accurate exposure for an object by a method wherein an X-ray shield plate and the object of exposure are moved relative to each other by a prescribed distance, after the first exposure for a prescribed time period of the object with the intermediary of an X-ray shield plate, and then another exposure is accomplished. CONSTITUTION:An X-ray shield plate 2a is placed on a wafer 1 applied with a resist 7 and X-ray beams 3 are projected for exposure on the resist 7 on the wafer 1 with the intermediary of the X-ray shield plate 2a. The wafer 1 is then caused to move by a prescribed distance and a second exposure is accomplished, which process is repeated. The X-ray beams 3 after penetrating X-ray transmitting films 5 and X-ray absorbing elements 6 installed on windows 4-1, 4-2... strike the riest 7 for various time lengths, respectively. The resist 7 is subjected to developing upon termination of the exposures, whereafter the sensitivity, gamma-value, etc., which the resist 7 presents to the X-rays after passing through the various X-ray absorbing elements 6 and X-ray transmitting films 5, may be measured.

公开(公告)号：JP2000299266A

公开(公告)日：2000-10-24

申请号：JP10390999

申请日：1999-04-12

Applicant: CANON KK

Inventor： AMAMIYA MITSUAKI ,  UZAWA SHUNICHI ,  CHIBA KEIKO

IPC: H01L21/027 ,  G03F1/22 ,  G03F1/24 ,  G03F7/20 ,  G03F1/16

Abstract: PROBLEM TO BE SOLVED: To form an X-ray mask with high accuracy by performing an exposure using an absorber having a periodic structure and an exposure using an absorber corresponding to a resist image. SOLUTION: A fine pattern for a fine mask is transferred by X-ray exposure. A cyclic pattern image of the fine pattern is formed on a resist 4 on an X-ray transmission film. A pattern 23 for a rough mask, which is a mask for preparing mask, is subjected to a double exposure process on the resist 4 having the fine pattern image transferred previously thereon, and the exposed rough mask pattern 23 is then developed. The position at which a resist pattern for dissection is strongly dependent on the position at which the fine pattern image is transferred. The size of the resist pattern for dissection is greatly affected by the fine pattern image as well. The periodic pattern image is obtained by superposing the fine pattern image upon the rough pattern image 23, and portions of the resist where exposure light exceeds a predetermined threshold remain as a resist pattern.

公开(公告)号：JP2000133584A

公开(公告)日：2000-05-12

申请号：JP32143098

申请日：1998-10-27

Applicant: CANON KK

Inventor： AMAMIYA MITSUAKI ,  UZAWA SHUNICHI ,  WATANABE YUTAKA

IPC: H01L21/027 ,  B81C1/00 ,  G03F7/20

Abstract: PROBLEM TO BE SOLVED: To improve the accuracy or the degree of resolution of an aligner through a method, wherein the error of formation of a mask pattern is equalized by performing an exposing operation by changing the interval between a mask and the material to be exposed, and the exposure operation is performed by overlapping the material to be exposed on the region to be exposed. SOLUTION: A membrane 11 is formed of a material of high X-ray transmittance and an X-ray absorbing body 12 is formed by tungsten and molybdenum, etc. A diffraction grating-shaped pattern is formed on the membrane 11 by an X-ray absorbing body 12, and a fine pattern mask 10 is formed. At this point, the fine pattern is formed by providing the quality and thickness of the material of the X-ray absorbing body 12, and the interval, etc., of the mask 10 and the material to be exposed when an exposing operation is performed, and the region to be exposed is irradiated with the X-rays are by changing the interval between the mask 10 and the material to be exposed, when the exposing operation is performed. As a result, a microscopic line pattern is exposed with high contrast, and the accuracy of exposure and the degree of resolution can be improved.

公开(公告)号：JPH11326068A

公开(公告)日：1999-11-26

申请号：JP14001098

申请日：1998-05-21

Applicant: CANON KK

Inventor： AMAMIYA MITSUAKI

IPC: G01K1/08 ,  G01K7/02 ,  H01L35/02

Abstract: PROBLEM TO BE SOLVED: To prevent a short circuit generated between element wires constituting a thermocouple even in an atmosphere in which a conductive dust such as metal flutters by lengthening the shortest distance of a No.1 hole and a No.n hole along an edge surface of a protecting tube than a specific length. SOLUTION: This protecting tube for a thermocouple accommodating two element wires is provided with a stepped portion 6 at an intermediate area of holes 3a, 3b into which the thermocouple is inserted or drawn at an end. Thereby, the shortest distance of a first hole 3a and a second hole 3b can be lengthened than L-R1 -R2 (L represents a space between a center of the hole 3a and a center of the hole 3b and R1 and R2 represent a radius of the holes 3a, 3b, respectively). Accordingly, a distance along a surface of the two holes 3a, 3b can have a longer distance than that of a usual protecting tube. Therefore, a short circuit between the element wire passed through the hole 3a and the element wire passed through the hole 3b can be prevented even in an atmosphere in which a conductive dust such as metal and carbon flutters.

公开(公告)号：JPH1055947A

公开(公告)日：1998-02-24

申请号：JP21118096

申请日：1996-08-09

Applicant: CANON KK

Inventor： AMAMIYA MITSUAKI ,  CHIBA KEIKO

IPC: G03F7/11 ,  G03F7/40 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To ensure the uniformity with avoiding or possibly reducing the intensity attenuation of an X-ray irradiating an exposure surface by forming an intensity equalizing layer having a correcting function for the X-ray intensity variation of an aligner on an exposure mask. SOLUTION: A negative resist 2 is applied on the opposite face to the face of a base 3 where an exposure pattern 4 is routed and irradiated with a synchrotron ray(SR) 1 from an electron storage ring. If the SR 1 has an X-ray intensity distribution as shown in C, the film of a resist 2 at a high intensity position remains thick according to this intensity distribution as shown in B. The X-ray having such intensity distribution as shown in C is emitted to reduce the X-ray intensity according to the resist film thickness, thereby equalizing it.

公开(公告)号：JPH08222505A

公开(公告)日：1996-08-30

申请号：JP2527695

申请日：1995-02-14

Applicant: CANON KK

Inventor： HARUMI KAZUYUKI ,  WATANABE YUTAKA ,  AMAMIYA MITSUAKI

IPC: G03F7/20 ,  G02B27/09 ,  H01L21/027

Abstract: PURPOSE: To reduce, by a simple system, an illuminance irregularity caused by the accuracy of a mirror and, thereby, to enhance the accuracy of an exposure or to lower the required accuracy of the mirror. CONSTITUTION: A synchrotron radiation is expanded in a desired direction by means of a mirror 1002 having a finite curvature, the exposure amount of the expanded radiation 1 is controlled by a moving shutter 1003, and a Gaussian distribution-shaped intensity profile which is inherent in the synchrotron radiation is corrected. At this time, the mirror 1002 is turned and moved fine only once to one direction per exposure which is prescribed by the opening part of the shutter, and a very small illuminance irregularity arising from the radiation 1 can be made substantially uniform.

公开(公告)号：JPH0697050A

公开(公告)日：1994-04-08

申请号：JP27097392

申请日：1992-09-14

Applicant: CANON KK

Inventor： AMAMIYA MITSUAKI ,  MIYAKE AKIRA

IPC: G21K5/02 ,  G03F7/20 ,  H01L21/027

Abstract: PURPOSE:To correct the moving speed curve of a shutter by estimating the change of exposure strength distribution with a simple method, when the optical path of SR-X rays changes. CONSTITUTION:Exposure time is adjusted by controlling a shutter by a moving speed curve ground on exposure strength distribution D0 measured by trial printing before exposure starts. When the optical path of SR-X rays changes because of orbital electron injection, etc., X-ray intensity distribution V1 of the SR-X rays changed is measured, and the positional shift DELTAy between this and X-ray intensity distribution V0 of the SR-X rays before the start of the exposure. The moving speed curve of the shutter is corrected on the basis of this, assuming that the change of the exposure intensity distribution D0 caused by the change of the optical path is the same as the position shift DELTAy.

公开(公告)号：JPH04293225A

公开(公告)日：1992-10-16

申请号：JP8114091

申请日：1991-03-22

Applicant: CANON KK

Inventor： AMAMIYA MITSUAKI ,  UZAWA SHUNICHI

IPC: G03F7/20 ,  H01L21/027 ,  H01L21/30 ,  H01L21/683

Abstract: PURPOSE:To compensate process distortion with high precision in a sucking and retaining method for a substrate. CONSTITUTION:When exposure operation is started, the rear of a wafer 1 is sucked and retained by a wafer chuck 5 (step 41). In the case where the wafer is distorted, process distortion L is calculated (step 43). When the process distortion L is larger than an allowable value (step 44), the wafer 1 is expanded or contracted by a specified amount, thereby performing magnification correction. For this purpose, the suction retaining of the wafer 1 by the wafer chuck 5 is once released, the rear of the wafer 1 is brought into contact closely with the close contact surface of a temperature adjustment plate 10 set at a wafer setting temperature TW (step 48), and the wafer 1 is set at the wafer setting temperature TW. After that, the rear of the wafer 1 is again sucked and retained by the wafer chuck 5 (step 41), and exposure is performed (step 49).

公开(公告)号：JPH0425106A

公开(公告)日：1992-01-28

申请号：JP12924090

申请日：1990-05-21

Applicant: CANON KK

Inventor： HARA SHINICHI ,  AMAMIYA MITSUAKI ,  UZAWA SHUNICHI

IPC: G03F1/22 ,  G03F7/20 ,  H01L21/027 ,  H01L21/30

Abstract: PURPOSE:To grasp the accumulated amount of exposure for each mask, and to facilitate the decision of replacement of the mask by a method wherein the amount of exposure is detected when the mask is exposed, the detected value is added to the accumulated amount of exposure of the above-mentioned mask, and the obtained value is indicated. CONSTITUTION:A detecting device 303 with which the amount of exposure absorbed to a mask 105 when an exposing operation is conducted, a memory storage 305 with which the accumulated amount of exposure of each mask is stored, and a controller 302 with which the amount of exposure detected by the detection device 303 is added to the accumulated amount of exposure stored against the mask when each mask is exposed and indicated by an indicator 306, are provided on the title exposing device. Accordingly, the detected amount of exposure is added to the accumulated amount of exposure when each mask is exposed, and the added value can be indicated by the indicating part 306. As a result, the amount of exposure of each mask 105 can be recognized correctly, and the replacing time of the mask 105 can also be grasped properly.