公开(公告)号：JP2006226936A

公开(公告)日：2006-08-31

申请号：JP2005043477

申请日：2005-02-21

Applicant: CANON KK

Inventor： AMAMIYA MITSUAKI

IPC: G01J1/42 ,  G01J1/02 ,  G03F7/20 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a measuring method capable of measuring precisely an absolute intensity of light (in particular, EUV ray) having a desirable wavelength, even when a light other than the light having the desirable wavelength is incident on a calorimeter, or even when there is an offset that fluctuates. SOLUTION: In this measuring method, the intensity of the light, having the desirable wavelength, is measured using a band-pass filter for transmitting the light having the desired wavelength and the calorimeter for detecting the light via the band-pass filter, as to the light emitted from a light source. The method has a step of measuring time-serially an output from the calorimeter continuously; a step of stopping or starting the light emission from the light source in the measuring step; a step of finding the first limit value t→t 0 -0 and the second limit value t→t 0 +0 of the output from the calorimeter in a time t 0 , when the light emission from the light source is stopped or started, where t is the time in the measurement step, and t 0 is the time when the light emission from the light source is stopped; and a step of calculating a difference between the first limit value t→t 0 -0 and the second limit value t→t 0 +0. COPYRIGHT: (C)2006,JPO&NCIPI

公开(公告)号：JP2000247772A

公开(公告)日：2000-09-12

申请号：JP5107099

申请日：1999-02-26

Applicant: CANON KK

Inventor： AMAMIYA MITSUAKI

IPC: C30B11/00

Abstract: PROBLEM TO BE SOLVED: To provide a device for producing a crystal, capable of stabilizing the position of a solid-liquid interface and stably producing even a large diameter crystal having a diameter of >=300 mm, and to provide a method for producing the crystal. SOLUTION: This device for producing a crystal has a crucible 3 for receiving a raw material and heaters 1a, 1b disposed so as to surround the crucible 3 in an oven, and can lower the crucible 3 to cool the melted liquid 4 of the raw material from the lower side to produce the crystal. Therein, the device is provided with a control system 7 for controlling the inner temperature of the oven to place the melting point temperature position of the raw material 4 in the oven within a constant range (A-B) without relating to the position of the crucible 3.

公开(公告)号：JPH09260272A

公开(公告)日：1997-10-03

申请号：JP9320096

申请日：1996-03-22

Applicant: CANON KK

Inventor： HARUMI KAZUYUKI ,  AMAMIYA MITSUAKI

IPC: G21K1/06 ,  G03F7/20 ,  G21K5/02 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To control the relative position of an SR light and a magnification mirror which magnifies the SR light. SOLUTION: In SR light L1 is magnified in the (y) axis direction and introduced into an exposing chamber 3, and a wafer is irradiated with the SR light L1 . The output of a beam position detector 14 constituted of a pair of photoelectric sensors 14a, 14b is introduced in an operator 15. By comparing the output with previously stored reference data, the position deviation of the magnification mirror 5 in the (y) axis direction is detected. On the basis of the detected result, a (y) stage 13 is driven, and the relative position of the magnification mirror 5 to the SR light L1 is managed. When the sensitivity of the photoelectric sensors 14a, 14b are changed by irradiation, the position deviation of the magnification mirror 5 can not be accurately detected, so that the reference data are updated on the basis of the output of the photoelectric sensors 14a, 14b, just after maintenance of a light source 1 or during the exchange of a wafer.

公开(公告)号：JPH09102452A

公开(公告)日：1997-04-15

申请号：JP26009295

申请日：1995-10-06

Applicant: CANON KK

Inventor： AMAMIYA MITSUAKI ,  TSUKAMOTO MASAMI

IPC: G01B15/00 ,  G03F7/20 ,  G03F9/00 ,  H01J37/304 ,  H01L21/027 ,  H01L21/68

Abstract: PROBLEM TO BE SOLVED: To always detect a mark position accurately aiming highly accurate mark detection using electron beam is by setting an acceleration voltage of electron beam according to a layer structure of a substrate when detecting a mark on a substrate by using electron beam. SOLUTION: An alignment mark 31 is formed on a processed wafer 6, the alignment mark 31 and the wafer 6 are covered with an SiO2 layer 32 thereon and a resist layer 33 is further formed thereon. Electron beam 11 is cast on the wafer 6 while deflecting and scanning in an arrow direction. Fluorescent X-ray 34 is generated by the casting and the fluorescent X-ray 34 is detected by a detector 36. Thereby, a position of the alignment mark 31 on the wafer 6 is specified and an acceleration voltage of the electron beam 11 is set. Thereby, an accurate mark position can be always detected aiming at highly accurate mark detection using the electron beam 11.

公开(公告)号：JPH07321009A

公开(公告)日：1995-12-08

申请号：JP10969894

申请日：1994-05-24

Applicant: CANON KK

Inventor： AMAMIYA MITSUAKI ,  HARUMI KAZUYUKI ,  WATANABE YUTAKA

IPC: G03F7/20 ,  G03B27/32 ,  H01L21/027

Abstract: PURPOSE:To provide an aligner wherein uniform dose can be obtained all over the whole exposure region surface when the position of synchrotron radiation to a mirror is changed. CONSTITUTION:The title aligner is provided with a mirror 2 which reflects synchrotron radiation 1, a mirror driving mechanism 3 which retains and vibrates the mirror 2, an X-ray position detector 5 which detects the beam position of the synchrotron radiation 1 entering the mirror 2, and an adjusting mechanism which adjusts the average position of the mirror to the synchrotron radiation on the basis of the output of the detector 5 by using the mirror driving mechanism 3.

公开(公告)号：JPH07142375A

公开(公告)日：1995-06-02

申请号：JP31112493

申请日：1993-11-17

Applicant: CANON KK

Inventor： SUDO YUJI ,  EBINUMA RYUICHI ,  AMAMIYA MITSUAKI

IPC: G21K5/02 ,  G03F7/20 ,  G03F9/00 ,  H01L21/027

Abstract: PURPOSE:To enable safe and rapid adjustment of the attitude of an exposure chamber to an optical axis of exposure light by detecting exposure light passed through both slits of an opening part member and by comparing a detection position thereof a case wherein exposure light is parallel to a specified axis of an exposure chamber. CONSTITUTION:A slit member 8 having cross-like slits 9a, 9b, 10a, 10b is mounted on a pair of end boards 9, 10 instead of a mask of an exposure chamber and irradiated with exposure light. Exposure light passed through each of the slits 9a, 9b, 10a, 10b of the slit member 8 is detected by an X-ray strength sensor provided to an alignment stage of a wafer. Perpendicularity of a mask to an optical axis of exposure light is calculated on the basis of a position of the X-ray strength sensor when exposure light is detected and the attitude of an exposure chamber is adjusted. Thereby, it is possible to rapidly adjust perpendicularity, etc., of a mask to exposure light.

公开(公告)号：JPH07140257A

公开(公告)日：1995-06-02

申请号：JP15540393

申请日：1993-06-25

Applicant: CANON KK

Inventor： AMAMIYA MITSUAKI ,  MIYAKE AKIRA

IPC: G21K5/02 ,  G01T1/36 ,  H01L21/027 ,  H01L21/30 ,  H05H7/00 ,  H05H13/04

Abstract: PURPOSE:To provide a method for measuring an X-ray spectrum, whereby an X-ray spectrum and its spatial distribution can readily be determined by the addition of a polarization component within an electron orbital plane to a polarization component perpendicular to the electron orbital plane, and an X-ray exposure device which can quickly and easily provide the X-ray spectrum data required to correct the amount of exposure. CONSTITUTION:The direction of propagation of an X-ray 2 which is synchrotron radiation is (z)-axis, an axis parallel to an electron orbital plane and perpendicular to (z)-axis is (x)-axis, and an axis perpendicular to both (x)- and (z)-axes is (y)-axis. An opening 8 is provided for regulating a scattering position for the X-ray enlarged by a mirror 3. An X-ray detector 7 is provided for measuring the spectrum of the scattered X-ray. The angles that the direction of the scattered X-ray detected by the X-ray detector 7 forms with (x)- and (y)-axes are equal.

公开(公告)号：JPH04363700A

公开(公告)日：1992-12-16

申请号：JP16705991

申请日：1991-07-08

Applicant: CANON KK

Inventor： WATANABE YUTAKA ,  AMAMIYA MITSUAKI ,  EBINUMA RYUICHI ,  MIZUSAWA NOBUTOSHI ,  FUKUDA YOSHIAKI ,  UZAWA SHUNICHI

IPC: G21K5/00 ,  G21K5/04 ,  H01J35/18

Abstract: PURPOSE:To obtain a small sized, light weighted and also assuredely gas-tight X-ray transmitting window, and fixing method thereof. CONSTITUTION:An X-ray transmitting window consists of an X-ray transmitting film 2 which has a function of a vacuum diaphragm required for taking out the X-ray transmitting through vacuum into an atmosphere differing from the vacuum. An outer frame 3 which works as a gasket, is fit gas-tightly to both sides of peripheral part of the X-ray transmitting film 2, by a flange 4 formed by a material of which Brinnel hardness is larger than that of the outer frame 3, the outer flame 3 is fastened and fixed putting the X-ray transmitting film 2 in between.

公开(公告)号：JPH04329624A

公开(公告)日：1992-11-18

申请号：JP12644391

申请日：1991-05-01

Applicant: CANON KK

Inventor： AMAMIYA MITSUAKI ,  MORI MAKIKO ,  FUKUDA YOSHIAKI

IPC: G03F7/20 ,  H01L21/027

Abstract: PURPOSE:To control exposure dose following a time-elapse variation in intensity and in transmittivity by detecting the intensity of X-ray exposure light on the incidence side of X-ray exposure light rather than on a mask in an exposure chamber at predetermined two exposure points of time. CONSTITUTION:A first X-ray detector 9 is provided to detect intensities of synchrotoron radiation light S at respective points on a mask 6 at an exposure point of time t=0. A shutter 5 to adjust exposure dose by shielding the synchrotoron radiation light is provided on a Be window 4 side against a wafer 7 and the mask 6. A third X-ray detector 11 is provided to detect intensities of the synchrotron radiation light S passing through the Be window 4 at exposure points of time t=0 and t. The first, second, and third X-ray detectors 9, 10, 11 follow time-elapse variations in intensity of the synchrotoron radiation light S to detect its intensities.

公开(公告)号：JPH04139717A

公开(公告)日：1992-05-13

申请号：JP26061890

申请日：1990-10-01

Applicant: CANON KK

Inventor： AMAMIYA MITSUAKI ,  MIYAKE AKIRA

IPC: G03F1/22 ,  H01L21/027

Abstract: PURPOSE:To manufacture an excellent X-ray mask which can cope with a finely constituted integrated circuit by coating one surface of a mask for X-ray exposure mask with a negative photosensitive film and developing the photosensitive film after irradiating the film with X-rays from the surface of the mask on the opposite side of the film. CONSTITUTION:An X-ray mask substrate material 3 which is an X-ray transmissive material is deposited on an Si substrate 2 by a prescribed thickness by vapor deposition, etc. After a pattern 4 is formed on the mask substrate 3 by plating, etching, etc., the substrate 2 on the rear of the substrate 3 is removed by back etching so that a desired field angle can be obtained. After a negative photosensitive film 5 is formed on one surface of the substrate 3 by applying a negative resist, the film 5 is irradiated with X-rays 6 from the surface of the substrate 3 on the opposite side of the film 5, with the irradiation quantity being controlled to a suitable level. When the film 5 is developed, the film 5 does not remain where the substrate 3 is thick and remains as a thick film where the substrate 3 is thin. As a result, the intensity of the X-rays transmitted through this mask is made uniform since the total thickness of the substrate 3 and film 5 becomes uniform.