公开(公告)号：AT249093T

公开(公告)日：2003-09-15

申请号：AT99101106

申请日：1994-04-05

Applicant: CANON KK

Inventor： SUZUKI HIDETOSHI ,  OSADA YOSHIYUKI ,  NOMURA ICHIRO ,  ONO TAKEO ,  KAWADE HISAAKI ,  YAMAGUCHI EIJI ,  TAKEDA TOSHIHIKO ,  TOSHIMA HIROAKI ,  HAMAMOTO YASUHIRO ,  IWASAKI TATSUYA ,  ISONO AOJI ,  SUZUKI NORITAKE ,  TODOKORO YASUYUKI ,  OKUDA MASAHIRO ,  SHINJO KATSUHIKO

IPC: G09G3/22 ,  H01J1/316 ,  H01J9/02 ,  H01J29/04 ,  H01J31/12 ,  H01J1/30

公开(公告)号：AU749823B2

公开(公告)日：2002-07-04

申请号：AU6665700

申请日：2000-10-20

Applicant: CANON KK

Inventor： KAWADE HISAAKI ,  YAMANOBE MASATO ,  YAMAMOTO KEISUKE ,  HAMAMOTO YASUHIRO ,  MITOME MASANORI

IPC: H01J9/02 ,  H01J29/00 ,  H01J29/46 ,  H01J31/10

公开(公告)号：DE69605715T2

公开(公告)日：2000-06-08

申请号：DE69605715

申请日：1996-05-29

Applicant: CANON KK

Inventor： SUZUKI HIDETOSHI ,  NOMURA ICHIRO ,  TAKEDA TOSHIHIKO ,  NAKAMURA NAOTO ,  HAMAMOTO YASUHIRO

IPC: H01J1/316 ,  H01J1/30

Abstract: An electron source comprises a plurality of electron-emitting devices and a drive means for driving the devices. The drive means applies a voltage above a threshold level to selected ones of the plurality of electron-emitting devices according to an image signal to cause the selected devices to emit electrons. The drive means also applies a voltage pulse for bringing the plurality of electron-emitting devices into a high resistance state. The voltage pulse for bringing into a high resistance state has a polarity reverse to that of the voltage for causing electron emission and has a voltage rising rate of greater than 10V/sec.

公开(公告)号：DE69510624D1

公开(公告)日：1999-08-12

申请号：DE69510624

申请日：1995-08-25

Applicant: CANON KK

Inventor： KISHI FUMIO ,  YAMANOBE MASATO ,  TSUKAMOTO TAKEO ,  OHNISHI TOSHIKAZU ,  YAMAMOTO KEISUKE ,  IKEDA SOTOMITSU ,  HAMAMOTO YASUHIRO ,  MIYAZAKI KAZUYA

IPC: H01J1/316 ,  H01J9/02 ,  H01J1/30 ,  H01J31/12

Abstract: An electron-emitting device (1-5) having a pair of electrodes (2,3), an electroconductive film (4) arranged between the electrodes (2,3), and a gap formed in the electroconductive film, defining an electron-emitting region (5), is exposed to an atmosphere containing one or more than one organic substance and a gas having a composition expressed by the general formula XY (where both X and Y represent a hydrogen or a halogen atom) while a voltage, preferably a bipolar pulse voltage, is applied across the electrodes (2,3).

公开(公告)号：AT182030T

公开(公告)日：1999-07-15

申请号：AT95305954

申请日：1995-08-25

Applicant: CANON KK

Inventor： KISHI FUMIO ,  YAMANOBE MASATO ,  TSUKAMOTO TAKEO ,  OHNISHI TOSHIKAZU ,  YAMAMOTO KEISUKE ,  IKEDA SOTOMITSU ,  HAMAMOTO YASUHIRO ,  MIYAZAKI KAZUYA

IPC: H01J1/316 ,  H01J9/02 ,  H01J1/30 ,  H01J31/12

Abstract: An electron-emitting device (1-5) having a pair of electrodes (2,3), an electroconductive film (4) arranged between the electrodes (2,3), and a gap formed in the electroconductive film, defining an electron-emitting region (5), is exposed to an atmosphere containing one or more than one organic substance and a gas having a composition expressed by the general formula XY (where both X and Y represent a hydrogen or a halogen atom) while a voltage, preferably a bipolar pulse voltage, is applied across the electrodes (2,3).

公开(公告)号：AU700998B2

公开(公告)日：1999-01-14

申请号：AU2831895

申请日：1995-08-01

Applicant: CANON KK

Inventor： IWASAKI TATSUYA ,  YAMANOBE MASATO ,  TSUKAMOTO TAKEO ,  YAMAMOTO KEISUKE ,  HAMAMOTO YASUHIRO

IPC: H01J9/02 ,  H01J1/316 ,  H01J29/04 ,  H01J29/46 ,  H01J31/12 ,  H01J1/30

Abstract: In an electron-emitting device including, between electrodes, an electroconductive film having an electron emitting region, the electroconductive film has a film formed in the electron emitting region and made primarily of a material having the higher melting point than that of a material of the electroconductive film. Alternatively, the electroconductive film has a film formed in the electron emitting region and made primarily of a material having a higher temperature, at which the material develops a vapor pressure of 1.3 x 10 Pa, than that of a material of the electroconductive film. A manufacture method of an electron-emitting device includes a step of forming a film made primarily of a metal in the electron emitting region of the electroconductive film. The electron-emitting device has stable characteristics and improved efficiency of electron emission. An image-forming apparatus comprising the electron-emitting devices has high luminance and excellent stability in operation.

公开(公告)号：DE69406469D1

公开(公告)日：1997-12-04

申请号：DE69406469

申请日：1994-01-31

Applicant: CANON KK

Inventor： SATO YASUE ,  NOMURA ICHIRO ,  SUZUKI HIDETOSHI ,  TAKEDA TOSHIHIKO ,  NAKAMURA NAOTO ,  HAMAMOTO YASUHIRO

IPC: H01J9/02 ,  H01J9/26 ,  H01J31/12

公开(公告)号：AU681622B2

公开(公告)日：1997-09-04

申请号：AU5927794

申请日：1994-04-05

Applicant: CANON KK

Inventor： SUZUKI HIDETOSHI ,  OSADA YOSHIYUKI ,  NOMURA ICHIRO ,  ONO TAKEO ,  KAWADE HISAAKI ,  YAMAGUCHI EIJI ,  TAKEDA TOSHIHIKO ,  TOSHIMA HIROAKI ,  HAMAMOTO YASUHIRO ,  IWASAKI TATSUYA ,  ISONO AOJI ,  SUZUKI NORITAKE ,  TODOKORO YASUYUKI ,  OKUDA MASAHIRO ,  SHINJO KATSUHIKO

IPC: G09G3/22 ,  H01J1/316 ,  H01J9/02 ,  H01J29/04 ,  H01J31/12 ,  H01J29/46 ,  H01J31/00

公开(公告)号：AT155284T

公开(公告)日：1997-07-15

申请号：AT94105255

申请日：1994-04-05

Applicant: CANON KK

Inventor： SUZUKI HIDETOSHI ,  OSADA YOSHIYUKI ,  NOMURA ICHIRO ,  ONO TAKEO ,  KAWADE HISAAKI ,  YAMAGUCHI EIJI ,  TAKEDA TOSHIHIKO ,  TOSHIMA HIROAKI ,  HAMAMOTO YASUHIRO ,  IWASAKI TATSUYA ,  ISONO AOJI ,  SUZUKI NORITAKE ,  TODOKORO YASUYUKI ,  OKUDA MASAHIRO ,  SHINJO KATSUHIKO

IPC: G09G3/22 ,  H01J1/316 ,  H01J9/02 ,  H01J29/04 ,  H01J31/12 ,  H01J1/30

公开(公告)号：CA2282898A1

公开(公告)日：1996-03-23

申请号：CA2282898

申请日：1995-09-22

Applicant: CANON KK

Inventor： TSUKAMOTO TAKEO ,  YAMAMOTO KEISUKE ,  HAMAMOTO YASUHIRO ,  YAMANOBE MASATO

IPC: H01J1/30 ,  H01J9/02

Abstract: An electron-emitting device comprises an electroconductive film including an electron-emitting region disposed between a pair of electrodes arranged on a substrate. The electron-emitting region is formed close to the step portion formed by one of the electrodes and the substrate.