公开(公告)号：DE69220868T2

公开(公告)日：1997-11-06

申请号：DE69220868

申请日：1992-09-04

Applicant: CANON KK

Inventor： NIIBE MASAHITO ,  FUKUDA YASUAKI ,  HAYASHIDA MASAMI

IPC: G03F7/20

Abstract: A temperature distribution of an object, such as an optical element (2), onto which radiation energy (1) is irradiated, is measured. The change of the shape of the object is controlled by varying the temperature of a part of the object on the basis of the measured temperature distribution to stabilize the shape of the object. Also, the shape of the object being irradiated is stabilized by causing the same temperature distribution in the object when in the thermally stable condition to be generated in the object while it is being irradiated. If the shapes of masks used to manufacture semiconductor devices are stabilized by using the above methods, highly integrated semiconductor devices can be manufactured.

公开(公告)号：DE69220868D1

公开(公告)日：1997-08-21

申请号：DE69220868

申请日：1992-09-04

Applicant: CANON KK

Inventor： NIIBE MASAHITO ,  FUKUDA YASUAKI ,  HAYASHIDA MASAMI

IPC: G03F7/20

Abstract: A temperature distribution of an object, such as an optical element (2), onto which radiation energy (1) is irradiated, is measured. The change of the shape of the object is controlled by varying the temperature of a part of the object on the basis of the measured temperature distribution to stabilize the shape of the object. Also, the shape of the object being irradiated is stabilized by causing the same temperature distribution in the object when in the thermally stable condition to be generated in the object while it is being irradiated. If the shapes of masks used to manufacture semiconductor devices are stabilized by using the above methods, highly integrated semiconductor devices can be manufactured.

公开(公告)号：JPH0317266A

公开(公告)日：1991-01-25

申请号：JP15057489

申请日：1989-06-15

Applicant: CANON KK

Inventor： IIZUKA TAKASHI ,  MOCHIZUKI NORITAKA ,  HAYASHIDA MASAMI ,  NIIBE MASATO ,  WATANABE YUTAKA ,  FUKUDA YOSHIAKI

IPC: C23C14/46

Abstract: PURPOSE:To reduce the impurities in a film and to smooth the surface by providing an aperture contg. an element constituting a target in the vicinity of a target in a chamber and driving the aperture along with the target. CONSTITUTION:Plural targets 1a and 1b are fixed in the chamber 6, and a film is formed by ion beam sputtering. The apertures 2a and 2b are provided in the vicinity of the targets 1a and 1b. The surfaces of the apertures 2a and 2b are formed from the material contg. >=1 kind of elements constituting the corresponding targets 1a and 1b. A linking mechanism is provided to drive the apertures 2a and 2b along with the corresponding targets 1a and 1b.

公开(公告)号：JPH0253001A

公开(公告)日：1990-02-22

申请号：JP20506988

申请日：1988-08-17

Applicant: CANON KK

Inventor： NIIBE MASATO ,  HAYASHIDA MASAMI ,  IIZUKA TAKASHI ,  FUKUDA YOSHIAKI ,  OGURA SHIGETARO ,  WATANABE YUTAKA

IPC: G21K1/06 ,  G02B5/08 ,  G02B5/28

Abstract: PURPOSE:To stably produce multilayer film having high optical characteristics with good reproducibility by producing the film at >=200 deg.C substrate temp. and the silicide forming temp. of a metal or below at the time of alternately laminating silicon of a prescribed thickness and the metal on a substrate by a vacuum film forming method. CONSTITUTION:The layers 2, 4... of the metal which is the 1st material and the layers 3, 5... of the silicon which is the 2nd material are laminated on the substrate 1 by specifying the thicknesses thereof alternately to d2, d4,... d3, d5,..., respectively. The multifilm layers laminated alternately with the plural silicon 3, 5 and metals 2, 4 in such a manner are produced at >=200 deg.C substrate temp. of the film forming device and the silicide forming temp. of the metal or below in the production of the above- mentioned layers. The multilayer film having no island-shaped and columnar structures having several to several thousand Angstrom sizes in the fine structure of the multilayer film observed by an electron microscope is, therefore, formed. The roughening of the layer boundary faces is decreased in this way and the optical element having the high wavelength selective reflectivity and selective transmittance is stably produced in this way with the good reproducibility.

公开(公告)号：JP2585300B2

公开(公告)日：1997-02-26

申请号：JP25066087

申请日：1987-10-06

Applicant: CANON KK

Inventor： OGURA SHIGETARO ,  HAYASHIDA MASAMI ,  NIIBE MASATO

IPC: G02B5/08 ,  G01N23/00 ,  G02B5/28 ,  G21K1/06

公开(公告)号：JP2535037B2

公开(公告)日：1996-09-18

申请号：JP24969687

申请日：1987-10-05

Applicant: CANON KK

Inventor： HAYASHIDA MASAMI ,  WATANABE YUTAKA ,  OGURA SHIGETARO

IPC: G01N23/00 ,  G02B5/08 ,  G21K1/06

公开(公告)号：JPH07114173A

公开(公告)日：1995-05-02

申请号：JP25808593

申请日：1993-10-15

Applicant: CANON KK

Inventor： WATANABE YUTAKA ,  HAYASHIDA MASAMI

IPC: G03F1/22 ,  G03F1/24 ,  G03F1/32 ,  G03F1/54 ,  G03F1/68 ,  G03F7/20 ,  H01L21/027 ,  G03F1/08 ,  G03F1/16

Abstract: PURPOSE:To clarify the condition to be fulfilled by an absorber with respect to a half-tone reflection mask to be used in lithography using soft X-ray or vacuum UV. CONSTITUTION:When the optical constant of the substance constituting an absorber pattern 3 to be formed on a reflecting film 2 is expressed by 1-delta-ik (delta and (k) are a real number, and (i) is an imaginary unit) and the working wavelength by lambda, 0.29

公开(公告)号：JPH0253002A

公开(公告)日：1990-02-22

申请号：JP20507088

申请日：1988-08-17

Applicant: CANON KK

Inventor： IIZUKA TAKASHI ,  NIIBE MASATO ,  HAYASHIDA MASAMI ,  FUKUDA YOSHIAKI ,  OGURA SHIGETARO ,  WATANABE YUTAKA

IPC: G21K1/06 ,  G02B5/08

Abstract: PURPOSE:To obtain a smooth boundary face and good film thickness controllability with good reproducibility by specifying the range of input power and the film forming speed of molybdenum layers and silicon layers. CONSTITUTION:The molybdenum layers 2, 4, 6... and the silicon layers 3, 5, 7... are alternately laminated on a substrate 1 and a protective layer A is provided. The input power is set at 150W-300W; an argon pressure is set in a 7.0X10 -4.0X10 Torr range and the film forming speeds of the molybdenum layers and the silicon layers are respectively set at 0.5-1.0Angstrom /sec and 0.4-1.0Angstrom /sec range, respectively, as the film forming conditions. Since the energy of the particles arriving on the substrate 1 is relatively large, the smoothness of the boundary face is good and the film thickness controllability of the respective layers is good. The device having the smoothness indispensable for a reflecting mirror and the controllability of the film thickness is produced in this way with the good reproducibility.

公开(公告)号：JPH0921900A

公开(公告)日：1997-01-21

申请号：JP16870795

申请日：1995-07-04

Applicant: CANON KK

Inventor： MIYAKE AKIRA ,  HAYASHIDA MASAMI

IPC: G03F7/20 ,  G21K1/06 ,  G21K5/02 ,  G21K5/04 ,  G21K7/00 ,  H01L21/027 ,  H05H13/04

Abstract: PROBLEM TO BE SOLVED: To simply, effectively remove unnecessary light by using a spectral element whose emitting angle is different by wave length. SOLUTION: Emitted light from an undulator radiation source 1 contains harmonic X-rays, continuous X-rays, and an ultraviolet ray in addition to fundamental X-rays. Pencil-like thin beam of the emitted light is reflected and magnified with a convex reflecting mirror 2, then reflected with a concave diffraction grating 3. The beam is incident to the diffraction grating 3 at about 88 deg., only the X-rays having a wave length of about 13nm are emitted in the reflection mask 4, and most light having wave length other than about 13nm is absorbed in the grating 3 and an absorbing body 7. By using the diffraction grating 3 having different emitting angle by wave length in an illuminating optical system, light in an ultraviolet or visible region of long wave length, emitted from the undulator radiation source 1 is reflected in the direction different from X-rays which are necessary for exposure to be separated, and drop in resolution in pattern transfer can be prevented.

公开(公告)号：JPH06136551A

公开(公告)日：1994-05-17

申请号：JP29118592

申请日：1992-10-29

Applicant: CANON KK

Inventor： EGARA KOUICHI ,  IKEDA TSUTOMU ,  AKAIKE MASATAKE ,  MARUYAMA TOMOKO ,  HAYASHIDA MASAMI ,  FUKUDA YOSHIAKI

IPC: C23C18/42 ,  B81C1/00 ,  C23C18/00 ,  G02F1/1343 ,  G21K1/06 ,  H03H9/08 ,  H03H9/145

Abstract: PURPOSE:To produce the gold single crystal thin film usable for the comb-shaped electrodes of a surface acoustic wave element having excellent mechanical migration resistance and oxidation deterioration resistance, a curved crystal for X-ray spectroscopy having an excellent wavelength resolving power and light condensing performance, an adhesive element by the stress relieving of the common electrode of a liquid crystal panel and the coagulation effect utilizing the superplane of the gold thin film, etc. CONSTITUTION:The gold complex in a gold complex soln. is subjected to a decomposition treatment, by which the gold in the soln. is changed into a supersatd. state. A substrate 1 is brought into contact with this soln. to form the nucleus of the gold on the surface of the substrate 1 and the gold thin film consisting of the gold single crystal or gold single crystal group is grown by self-matching on the surface of the substrate on the basis of such nucleus, by which the gold single crystal thin film 3 is obtd.