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公开(公告)号：DE3752388T2
公开(公告)日：2006-10-19
申请号：DE3752388
申请日：1987-07-08
Applicant: CANON KK
Inventor： SUZUKI MASAYUKI , MOCHIZUKI NORITAKA , MINAMI SETSUO , OGURA SHIGETARO , FUKUDA YASUAKI , WATANABE YUTAKA , KAWAI YASUO , KARIYA TAKAO
Abstract: An X-ray exposure apparatus includes a stage (1) for holding a reflection type mask (MS) having a multilayered reflection pattern for circuit manufacturing, a stage (50) for holding a wafer (WF) to be exposed to the pattern of the mask with X-rays, and a reflection reduction imaging system, disposed between the mask stage and the wafer stage, including a reflecting mirror arrangement, containing a plurality of curved reflecting mirrors (M1, M2, M3) coated with multilayer films, for receiving X-rays from a mask (MS) and directing them to a wafer (WF) to expose the wafer to the pattern of the mask with the X-rays in a reduced scale.
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公开(公告)号：DE69132444D1
公开(公告)日：2000-11-16
申请号：DE69132444
申请日：1991-07-12
Applicant: CANON KK
Inventor： FUKUDA YASUAKI , MATSUMOTO SHIGEYUKI
Abstract: An X-ray mask structure comprises an X-ray transmissive film, an X-ray absorptive member held on the X-ray transmissive film and supporting frame for supporting the X-ray transmissive film. The X-ray absorptive member is constituted of crystalline grains having a grain boundary size of 1 mu m or larger, or has a density of 90% or more relative to the density of the bulk material.
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公开(公告)号：DE3752314T2
公开(公告)日：2000-09-14
申请号：DE3752314
申请日：1987-07-08
Applicant: CANON KK
Inventor： SUZUKI MASAYUKI , MOCHIZUKI NORITAKA , MINAMI SETSUO , OGURA SHIGETARO , FUKUDA YASUAKI , WATANABE YUTAKA , KAWAI YASUO , KARIYA TAKAO
Abstract: An X-ray exposure apparatus includes a stage (1) for holding a reflection type mask (MS) having a multilayered reflection pattern for circuit manufacturing, a stage (50) for holding a wafer (WF) to be exposed to the pattern of the mask with X-rays, and a reflection reduction imaging system, disposed between the mask stage and the wafer stage, including a reflecting mirror arrangement, containing a plurality of curved reflecting mirrors (M1, M2, M3) coated with multilayer films, for receiving X-rays from a mask (MS) and directing them to a wafer (WF) to expose the wafer to the pattern of the mask with the X-rays in a reduced scale.
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公开(公告)号：DE69121972T2
公开(公告)日：1997-02-13
申请号：DE69121972
申请日：1991-05-31
Applicant: CANON KK
Inventor： HAYASHIDA MASAMI , WATANABE YUTAKA , NIIBE MASAHITO , IIZUKA TAKASHI , FUKUDA YASUAKI
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公开(公告)号：DE69121972D1
公开(公告)日：1996-10-17
申请号：DE69121972
申请日：1991-05-31
Applicant: CANON KK
Inventor： HAYASHIDA MASAMI , WATANABE YUTAKA , NIIBE MASAHITO , IIZUKA TAKASHI , FUKUDA YASUAKI
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Patent Agency Ranking
公开(公告)号：CA2077572A1
公开(公告)日：1993-03-08
申请号：CA2077572
申请日：1992-09-04
Applicant: CANON KK
Inventor： NIIBE MASAHITO , FUKUDA YASUAKI , HAYASHIDA MASAMI
IPC: G03F7/20 , G05D5/00 , G05D23/19 , H01L21/027
Abstract: A temperature distribution of an object, such as an optical element (2), onto which radiation energy (1) is irradiated, is measured. The change of the shape of the object is controlled by varying the temperature of a part of the object on the basis of the measured temperature distribution to stabilize the shape of the object. Also, the shape of the object being irradiated is stabilized by causing the same temperature distribution in the object when in the thermally stable condition to be generated in the object while it is being irradiated. If the shapes of masks used to manufacture semiconductor devices are stabilized by using the above methods, highly integrated semiconductor devices can be manufactured.
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公开(公告)号：CA2077572C
公开(公告)日：1998-08-18
申请号：CA2077572
申请日：1992-09-04
Applicant: CANON KK
Inventor： NIIBE MASAHITO , FUKUDA YASUAKI , HAYASHIDA MASAMI
IPC: G03F7/20 , G05D5/00 , H01L21/027 , G05D23/19
Abstract: A temperature distribution of an object, such as an optical element, onto which radiation energy is irradiated, is measured. The change of the shape of the object is controlled by varying the temperature of a part of the object on the basis of the measured temperature distribution to stabilize the shape of the object. Also, the shape of the object being irradiated is stabilized by causing the same temperature distribution in the object when in the thermally stable condition to be generated in the object while it is being irradiated. If the shapes of masks used to manufacture semiconductor devices are stabilized by using the above methods, highly integrated semiconductor devices can be manufactured.
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公开(公告)号：DE69126738T2
公开(公告)日：1997-11-06
申请号：DE69126738
申请日：1991-04-04
Applicant: CANON KK
Inventor： FUJIOKA HIDEHIKO , MIYACHI TAKESHI , CHIBA YUJI , MIZUSAWA NOBUTOSHI , KARIYA TAKAO , UZAWA SHUNICHI , FUKUDA YASUAKI
IPC: G03F1/22 , G03F9/00 , H01L21/027 , H01L21/30 , G03F1/14
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公开(公告)号：DE3855908D1
公开(公告)日：1997-06-19
申请号：DE3855908
申请日：1988-12-29
Applicant: CANON KK
Inventor： FUKUDA YASUAKI
Abstract: An X-ray mask support member, an X-ray mask, and an X-ray exposure process using the X-ray mask, that can effectively prevent the phenomenon of electrostatic attraction or contact of X-ray masks by appropriately disposing an X-ray mask support membrane in an exposure apparatus that employs soft X-rays, by which a high precision alignment can be performed,are provided.
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公开(公告)号：DE3855834D1
公开(公告)日：1997-04-24
申请号：DE3855834
申请日：1988-09-30
Applicant: CANON KK
Inventor： KUSHIBIKI NOBUO , KATO HIDEO , MIYAKE AKIRA , FUKUDA YASUAKI
Abstract: an X-ray mask support comprises a support frame and a support film, wherein both of the support frame and the support film have a thermal expansion coefficient of not more than 1 x 10 K or wherein the thermal expansion coefficient of the support film does not exceed that of the support flame or wherein both the support frame and the support film have a thermal expansion coefficient of not more than 1 x 10 K and the support film has a surface roughness at least on the mask surface, of not more than 10 nm r.m.s.
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