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    12.
    发明专利
    未知

    公开(公告)号：DE3751739T2

    公开(公告)日：1996-09-19

    申请号：DE3751739

    申请日：1987-11-10

    Applicant: CANON KK

    Inventor： GOFUKU IHACHIRO ,  OSADA YOSHIYUKI ,  NAKAGAWA KATSUMI ,  HATANAKA KATSUNORI ,  SAIKA TOSHIHIRO ,  KAIFU NORIYUKI

    IPC: H01L27/146 ,  H04N1/193 ,  H01L27/14

    Abstract: A photoelectric converter comprising a photoelectric conversion unit which includes a pair of main electrodes, spaced by a photoreception area over a semiconductor layer, and an auxiliary electrode. The semiconductor layer and the auxiliary electrode are laminated through the intermediary of an insulating layer in at least the photoreception area. It also includes a storage capacitor for storing electric charges flowing through the photoelectric conversion unit, a transfer transistor for transferring the charges stored in the capacitor, a discharge transistor for discharging the charges stored in the storage capacitor, and dividing device for dividing a switching voltage applied to the control electrode of the discharge transistor to apply a divided voltage to the auxiliary electrode.

    13.
    发明专利
    未知

    公开(公告)号：DE3751739D1

    公开(公告)日：1996-04-18

    申请号：DE3751739

    申请日：1987-11-10

    Applicant: CANON KK

    Inventor： GOFUKU IHACHIRO ,  OSADA YOSHIYUKI ,  NAKAGAWA KATSUMI ,  HATANAKA KATSUNORI ,  SAIKA TOSHIHIRO ,  KAIFU NORIYUKI

    IPC: H01L27/146 ,  H04N1/193 ,  H01L27/14

    Abstract: A photoelectric converter comprising a photoelectric conversion unit which includes a pair of main electrodes, spaced by a photoreception area over a semiconductor layer, and an auxiliary electrode. The semiconductor layer and the auxiliary electrode are laminated through the intermediary of an insulating layer in at least the photoreception area. It also includes a storage capacitor for storing electric charges flowing through the photoelectric conversion unit, a transfer transistor for transferring the charges stored in the capacitor, a discharge transistor for discharging the charges stored in the storage capacitor, and dividing device for dividing a switching voltage applied to the control electrode of the discharge transistor to apply a divided voltage to the auxiliary electrode.

    14.
    发明专利
    未知

    公开(公告)号：DE3854040T2

    公开(公告)日：1995-10-26

    申请号：DE3854040

    申请日：1988-11-18

    Applicant: CANON KK

    Inventor： NAKAGAWA KATSUMI ,  ISHIHARA SHUNICHI ,  KANAI MASAHIRO ,  ARAO KOZO ,  FUJIOKA YASUSHI ,  SAKAI AKIRA

    IPC: H01L31/0296 ,  H01L31/0392 ,  H01L31/075 ,  H01L31/18 ,  H01L31/20 ,  H01L31/06 ,  H01L31/02 ,  H01L21/365

    Abstract: An improved pin junction photovoltaic element which causes photoelectromotive force by the junction of a p-type semiconductor layer, an i-type semiconductor layer and an n-type semiconductor layer, characterized in that at least one of said p-type semiconductor layer and said n-type semiconductor layer comprises a p-typed or n-typed ZnSe:H:M film, where M is a dopant of p-type or n-type: the amount of the H is in the range of from 1 to 4 atomic %: and said film contains crystal grain domains in a proportion of 65 to 85 vol % per unit volume; and said i-type semiconductor layer comprises a non-single crystal Si(H,F) film or a non-single crystal Si(C,Ge)(H,F) film.

    15.
    发明专利
    未知

    公开(公告)号：ES2073407T3

    公开(公告)日：1995-08-16

    申请号：ES88310933

    申请日：1988-11-18

    Applicant: CANON KK

    Inventor： NAKAGAWA KATSUMI ,  ISHIHARA SHUNICHI ,  KANAI MASAHIRO ,  ARAO KOZO ,  FUJIOKA YASUSHI ,  SAKAI AKIRA

    IPC: H01L31/0296 ,  H01L31/0392 ,  H01L31/075 ,  H01L31/18 ,  H01L31/20 ,  H01L31/06 ,  H01L31/02 ,  H01L21/365

    Abstract: An improved pin junction photovoltaic element which causes photoelectromotive force by the junction of a p-type semiconductor layer, an i-type semiconductor layer and an n-type semiconductor layer, characterized in that at least one of said p-type semiconductor layer and said n-type semiconductor layer comprises a p-typed or n-typed ZnSe:H:M film, where M is a dopant of p-type or n-type: the amount of the H is in the range of from 1 to 4 atomic %: and said film contains crystal grain domains in a proportion of 65 to 85 vol % per unit volume; and said i-type semiconductor layer comprises a non-single crystal Si(H,F) film or a non-single crystal Si(C,Ge)(H,F) film.

    16.
    发明专利
    未知

    公开(公告)号：AT124169T

    公开(公告)日：1995-07-15

    申请号：AT88310933

    申请日：1988-11-18

    Applicant: CANON KK

    Inventor： NAKAGAWA KATSUMI ,  ISHIHARA SHUNICHI ,  KANAI MASAHIRO ,  ARAO KOZO ,  FUJIOKA YASUSHI ,  SAKAI AKIRA

    IPC: H01L31/0296 ,  H01L31/0392 ,  H01L31/075 ,  H01L31/18 ,  H01L31/20 ,  H01L31/06 ,  H01L31/02 ,  H01L21/365

    Abstract: An improved pin junction photovoltaic element which causes photoelectromotive force by the junction of a p-type semiconductor layer, an i-type semiconductor layer and an n-type semiconductor layer, characterized in that at least one of said p-type semiconductor layer and said n-type semiconductor layer comprises a p-typed or n-typed ZnSe:H:M film, where M is a dopant of p-type or n-type: the amount of the H is in the range of from 1 to 4 atomic %: and said film contains crystal grain domains in a proportion of 65 to 85 vol % per unit volume; and said i-type semiconductor layer comprises a non-single crystal Si(H,F) film or a non-single crystal Si(C,Ge)(H,F) film.

    18.
    发明专利
    未知

    公开(公告)号：DE3936666A1

    公开(公告)日：1990-05-23

    申请号：DE3936666

    申请日：1989-11-03

    Applicant: CANON KK

    Inventor： NAKAGAWA KATSUMI

    IPC: H01L31/04 ,  H01L31/0216 ,  H01L31/075 ,  H01L31/076 ,  H01L31/18 ,  H01L31/20

    Abstract: An improved stacked type photovoltaic device comprises a plurality of stacked photovoltaic elements wherein at least one element thereof comprises a semiconductor layer (a) having a refractive index na and a semiconductor layer (b) having a refractive index nb and a semiconductor layer (c) is inserted therebetween as an antireflection layer; wherein said semiconductor layer (c) has constitutent elements having a composition ratio different from the composition ratio of the constituent elements of both said semiconductor layer (a) and (b) and said semiconductor layer (c) has a refractive index nc= 2ROOT na.nb and a thickness d= lambda /4 2ROOT na.nb, in which lambda represents a peak wavelength of the spectral sensitivity of an adjacent photovoltaic element positioned in the direction of light transmission. The semiconductor layer (c) may also be constituted by a semiconductor film having an elemental composition comprising other elements in addition to the constituent elements of the semiconductor layer (b).

    19.
    发明专利
    未知

    公开(公告)号：FR2638900A1

    公开(公告)日：1990-05-11

    申请号：FR8914439

    申请日：1989-11-03

    Applicant: CANON KK

    Inventor： NAKAGAWA KATSUMI

    IPC: H01L31/04 ,  H01L31/0216 ,  H01L31/075 ,  H01L31/076 ,  H01L31/18 ,  H01L31/20

    Abstract: An improved stacked type photovoltaic device comprises a plurality of stacked photovoltaic elements wherein at least one element thereof comprises a semiconductor layer (a) having a refractive index na and a semiconductor layer (b) having a refractive index nb and a semiconductor layer (c) is inserted therebetween as an antireflection layer; wherein said semiconductor layer (c) has constitutent elements having a composition ratio different from the composition ratio of the constituent elements of both said semiconductor layer (a) and (b) and said semiconductor layer (c) has a refractive index nc= 2ROOT na.nb and a thickness d= lambda /4 2ROOT na.nb, in which lambda represents a peak wavelength of the spectral sensitivity of an adjacent photovoltaic element positioned in the direction of light transmission. The semiconductor layer (c) may also be constituted by a semiconductor film having an elemental composition comprising other elements in addition to the constituent elements of the semiconductor layer (b).

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