2.
    发明专利
    未知

    公开(公告)号:AT186792T

    公开(公告)日:1999-12-15

    申请号:AT92108879

    申请日:1992-05-26

    Applicant: CANON KK

    Abstract: Information recording/reproducing apparatus and method by use of probe electrodes are disclosed. In this method, information to be recorded on a recording medium is encoded. The encoded information is distributed to a plurality of probe electrodes. The plurality of probe electrodes are driven on the basis of the distributed information so as to record the information on the recording medium. In reproduction, the information recorded on the recording medium is read out from the recording medium by use of the plurality of probe electrodes. The information read out from the recording medium is stored by use of the plurality of probe electrodes. The stored information is decoded to reproduce the information recorded on the recording medium. The encoding is performed by changing the information to be recorded to information added with an error correction code.

    5.
    发明专利
    未知

    公开(公告)号:AT167328T

    公开(公告)日:1998-06-15

    申请号:AT92117452

    申请日:1992-10-13

    Applicant: CANON KK

    Abstract: An information processing apparatus for accumulating image information consisting of n pixels and effecting the processing of output of the information is provided with a plurality of memory devices, a distributing device and an output control device. The information is stored in the plurality of memory devices. By the distributing device, the image information consisting of the n pixels are divided into m pixel unit basis (n > m), and the information consisting of the m pixels into a p (m > p) pixel unit basis, and the plurality of information each consisting of the p pixels are distributed to the plurality of memory devices. Upon the output of the image information, the information stored in the plurality of memory devices are selectively outputted by the output control device.

    9.
    发明专利
    未知

    公开(公告)号:DE3409387C2

    公开(公告)日:1997-01-16

    申请号:DE3409387

    申请日:1984-03-14

    Applicant: CANON KK

    Abstract: In a semiconductor device comprising a wiring to be connected to the source region or the drain region of a thin film transistor, at least a portion of the wiring comprising a wiring part having the same cross-sectional structure as said source region or said drain region, and said wiring part being formed continuously with said source region or said drain region simultaneously with the respective end portions of said wiring portions, said source region and said drain region formed in such a manner that the edge thereof is set back from the end of the semiconductor layer constituting the thin film transistor.

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