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    13.
    发明专利
    未知

    公开(公告)号：AT527685T

    公开(公告)日：2011-10-15

    申请号：AT04741702

    申请日：2004-06-02

    Applicant: EVONIK DEGUSSA GMBH

    Inventor： KUEHNLE ADOLF ,  JOST CARSTEN ,  RAULEDER HARTWIG ,  RENTROP CORNE ,  VAN DAM ROELANT ,  TIMMER KLAAS ,  FISCHER HARTMUT

    IPC: H01L21/316 ,  C09D183/04

    Abstract: The invention relates to processes for producing low-k dielectric films on semiconductors or electrical circuits, which comprises using incompletely condensed polyhedral oligomeric silsesquioxanes of the formula [(R a X b SiO 1.5 ) m (R c Y d SiO) n ] with: a, b=0-1; c, d=1; m+n>=3; a+b=1; n, m>=1, R=hydrogen atom or alkyl, cycloalkyl, alkenyl, cycloalkenyl, alkynyl, cycloalkynyl, aryl or heteroaryl group, in each case substituted or unsubstituted, X=an oxy, hydroxyl, alkoxy, carboxyl, silyl, silyloxy, halogen, epoxy, ester, fluoroalkyl, isocyanate, acrylate, methacrylate, nitrile, amino or phosphine group or substituents of type R containing at least one such group of type X, Y=hydroxyl, alkoxy or a substituent of type O-SiZ 1 Z 2 Z 3 , where Z 1 , Z 2 and Z 3 are fluoroalkyl, alkoxy, silyloxy, epoxy, ester, acrylate, methacrylate or a nitrile group or substituents of type R and are identical or different, not only the substituents of type R being identical or different but also the substituents of type X and Y in each case being identical or different, and comprising at least one hydroxyl group as substituent of type Y, for producing the film, and to low-k dielectric films produced by this process.

    16.
    发明专利
    未知

    公开(公告)号：DE10331794A1

    公开(公告)日：2005-02-03

    申请号：DE10331794

    申请日：2003-07-11

    Applicant: DEGUSSA

    Inventor： WENNING ANDREAS ,  SCHMIDT FRIEDRICH GEORG ,  KUEHNLE ADOLF ,  JOST CARSTEN ,  WOUTERS MARIELLE ,  BRACHT HENK VAN

    IPC: C09D4/00 ,  C08F2/46 ,  C08K5/549 ,  C09D5/00 ,  C09D5/03 ,  C09D7/12 ,  C09D133/00 ,  C09D175/04 ,  C09D183/04

    Abstract: Radiation-curable coating powder composition based on radiation-curable binders and conventional additives also contains compounds with polyhedral, oligomeric silicon-oxygen cluster units. Radiation-curable coating powder compositions (CPC) comprising (I) a binder containing radiation-crosslinkable compound(s), (II) compound(s) of the following formula with polyhedral, oligomeric silicon-oxygen cluster units (POSO units), in which [Image] a, b, c : 0-1; d : 1-2; e, f, g : 0-3; h : 1-4; (m+n+o+p) : 4 or more; (a+b) : 1; (c+d) : 2; (e+f) : 3; (g+h) : 4; R : H, alkyl, cycloalkyl, alkenyl, cycloalkenyl, alkynyl, cycloalkynyl, aryl, heteroaryl or polymer units (all optionally substituted), or other functionalised POSO units linked via a polymer unit or a bridging unit; X : oxy, hydroxy, alkoxy, carboxy, silyl, alkylsilyl, alkoxysilyl, siloxy, alkylsiloxy, alkoxysiloxy, silylalkyl, alkoxysilylalkyl, alkylsilylalkyl, halogen, epoxy, ester, fluoroalkyl, optionally blocked isocyanate, (meth)acrylate, nitrile, amino, phosphino, or groups R substituted with the above groups X and (III) additives and auxiliary materials. Independent claims are also included for (1) a method for the production of CPC by compounding the above components at up to 140[deg]C in a heatable kneader, especially an extruder (2) a method for the production of coatings by using CPC as above (3) coatings made from CPC as above.

    17.
    发明专利
    未知

    公开(公告)号：DE10330022A1

    公开(公告)日：2005-01-20

    申请号：DE10330022

    申请日：2003-07-03

    Applicant: DEGUSSA

    Inventor： KUEHNLE ADOLF ,  JOST CARSTEN ,  RAULEDER HARTWIG ,  RENTROP CORNE ,  DAM ROELANT VAN ,  TIMMER KLAAS ,  FISCHER HARTMUT

    IPC: C09D183/04 ,  H01L21/316 ,  H01L21/312

    Abstract: The invention relates to processes for producing low-k dielectric films on semiconductors or electrical circuits, which comprises using incompletely condensed polyhedral oligomeric silsesquioxanes of the formula [(R a X b SiO 1.5 ) m (R c Y d SiO) n ] with: a, b=0-1; c, d=1; m+n>=3; a+b=1; n, m>=1, R=hydrogen atom or alkyl, cycloalkyl, alkenyl, cycloalkenyl, alkynyl, cycloalkynyl, aryl or heteroaryl group, in each case substituted or unsubstituted, X=an oxy, hydroxyl, alkoxy, carboxyl, silyl, silyloxy, halogen, epoxy, ester, fluoroalkyl, isocyanate, acrylate, methacrylate, nitrile, amino or phosphine group or substituents of type R containing at least one such group of type X, Y=hydroxyl, alkoxy or a substituent of type O-SiZ 1 Z 2 Z 3 , where Z 1 , Z 2 and Z 3 are fluoroalkyl, alkoxy, silyloxy, epoxy, ester, acrylate, methacrylate or a nitrile group or substituents of type R and are identical or different, not only the substituents of type R being identical or different but also the substituents of type X and Y in each case being identical or different, and comprising at least one hydroxyl group as substituent of type Y, for producing the film, and to low-k dielectric films produced by this process.

    Preparation of composition comprising functionalized silasesquioxane, comprises modifying aminosilane compound with acid, and converting modified aminosilane compound with silane compound
    19.
    发明专利
    Preparation of composition comprising functionalized silasesquioxane, comprises modifying aminosilane compound with acid, and converting modified aminosilane compound with silane compound 未知

    公开(公告)号：DE102005024814A1

    公开(公告)日：2006-11-30

    申请号：DE102005024814

    申请日：2005-05-27

    Applicant: DEGUSSA

    Inventor： KUEHNLE ADOLF

    IPC: C07F7/10 ,  C07F7/18

    Abstract: Preparation of a composition comprising functionalized silsesquioxane comprises modifying aminosilane compound with an acid; and converting modified aminosilane compound with silane compound to obtain functionalized polyhedral silsesquioxane, where the velocity constant of the aminosilane and silane compound is modified. Preparation of a composition exhibiting functionalized silsesquioxane comprises modifying amino silane compound of formula (AmSiY1>n) with an acid; and converting modified aminosilane compound with silane compound of formula ((RaXb)mSiY1>n) to obtain functionalized silsesquioxane, where the velocity constant of the aminosilane and silane compound is modified. Either a, b : 0-1; and m, n : 1-3; a+b : 1; or m+n : 4; A : amino or substituted amino group of type R; R, : H, (cyclo)alkyl-, (cyclo)alkenyl-, cycloalkynyl-, or (hetero)aryl (optionally substituted); X : oxy, OH, alkoxy, carboxy, (alkyl)silyl, alkoxysilyl, (alkyl)siloxy, alkoxysiloxy, silylalkyl, alkoxysilylalkyl, alkylsilylalkyl, halo, epoxy, ester, fluoroalkyl, blocked isocyanate, (meth)acrylate, mercapto-nitrile, phosphino group or at least such a group of the type X of exhibits substituted type R; and Y1>OH, ONa, OK, OR1>, OCOR1>, OSiR3, Cl, Br, I or NR2. R1>R. Independent claims are included for: (1) a composition of functionalized polyhedral oligomer silsesquioxane compound of formula ((RaXbA1>rSiO1.5)m(RcXdA1>sSiO)n); and (2) a functionalized polyhedral oligomer silsesquioxane compound. Either a, b, c, r : 0-1; and d, s : 0-2; or m+n+o+p : 4-14; a+b+r : 1; c+d+s : 2 (where r+s is >= 1); and A1>amino, ammonium or substituted ammonium group with the type R.

    20.
    发明专利
    未知

    公开(公告)号：DE10331787A1

    公开(公告)日：2005-02-17

    申请号：DE10331787

    申请日：2003-07-11

    Applicant: DEGUSSA

    Inventor： SPYROU EMMANOUIL ,  SCHMIDT FRIEDRICH GEORG ,  KUEHNLE ADOLF ,  JOST CARSTEN

    IPC: C07F7/21 ,  C08G18/61 ,  C08G18/77 ,  C08G77/388 ,  C08K5/549 ,  C09D4/02 ,  C09D175/04 ,  C09D175/06 ,  C09D175/14 ,  C09D183/10 ,  C08G18/10 ,  C08G77/458 ,  C08G18/81 ,  C08G18/83

    Abstract: Functional isocyanate compounds obtained by reacting polyisocyanates with polyhedral, oligomeric silicon-oxygen cluster compounds containing groups which react with isocyanate, so that 1-20 mol% of the original isocyanate groups undergo conversion (or 80-99 mol% if a blocking agent is used). NCO-containing compounds (I) with covalently-bonded, polyhedral, oligomeric silicon-oxygen cluster units (POSO) formed by the reaction of (A) aromatic, aliphatic and/or cycloaliphatic polyisocyanate(s) with an NCO functionality of 2-6 with (B) 0.001-20.0 wt.% POSO units containing NCO-reactive functional groups, with 1-20 mol% conversion based on originally-present free NCO groups and optionally (C) a blocking agent, with 80-99 mol% conversion of NCO groups. Independent claims are also included for: (1) paint containing (I) as crosslinker, with at least one polyol component (2) coatings obtained with this paint.

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