公开(公告)号：US20190118332A1

公开(公告)日：2019-04-25

申请号：US16162914

申请日：2018-10-17

Applicant: EBARA CORPORATION

Inventor： Mitsunori SUGIYAMA ,  Taro TAKAHASHI ,  Yoichi KOBAYASHI

IPC: B24B37/013 ,  B24B37/12 ,  B24B49/12 ,  B24B57/02

Abstract: A polishing table holds a polishing pad. A top ring holds a semiconductor wafer. A swing arm holds the top ring. The swing arm swings around a swing center on the swing arm during polishing. An optical sensor is disposed on the polishing table and measures an optical characteristic changeable in accordance with a variation in film thickness of the semiconductor wafer. A fluid supply control apparatus determines a distance from an axis of rotation to the optical sensor when the semiconductor wafer is rotated by the top ring. An end point detection section detects a polishing end point indicating an end of polishing based on the optical characteristic measured by the optical sensor and the determined distance.

公开(公告)号：US20150262893A1

公开(公告)日：2015-09-17

申请号：US14656429

申请日：2015-03-12

Applicant: EBARA CORPORATION

Inventor： Akira NAKAMURA ,  Hiroaki SHIBUE ,  Yasumasa HIROO ,  Hiroshi OTA ,  Taro TAKAHASHI ,  Mitsuo TADA

IPC: H01L21/66 ,  H01L21/67 ,  H01L21/306 ,  G01B7/06 ,  B24B37/013 ,  B24B49/10

CPC classification number: H01L22/26 ,  B24B37/013 ,  B24B49/105 ,  G01B7/105 ,  H01L22/14

Abstract: The polishing process includes a first state where an eddy current sensor and a polishing target object do not face each other and a second state where the eddy current sensor and the polishing target object face each other. The method of correcting a film thickness measurement value includes obtaining a first measurement signal (Xout, Yout) output from the eddy current sensor in the first state (step S108), computing a correction value (ΔX, ΔY) on the basis of the obtained first measurement signal and a reference signal (Xsd, Ysd) set in advance, obtaining a second measurement signal (X, Y) output from the eddy current sensor in the second state (step S104), and correcting the obtained second measurement signal on the basis of the computed correction value while the polishing process is being performed (step S105).

Abstract translation: 抛光处理包括涡流传感器和抛光对象物不彼此相对的第一状态以及涡流传感器和抛光对象物体彼此面对的第二状态。 修正膜厚测量值的方法包括获得在第一状态下从涡流传感器输出的第一测量信号（Xout，Yout）（步骤S108），计算校正值（＆Dgr; X，＆Dgr; Y） 获取第一测量信号的基础和预先设置的参考信号（Xsd，Ysd），获得在第二状态下从涡流传感器输出的第二测量信号（X，Y）（步骤S104），并且校正所获得的第二测量信号 在进行抛光处理时，基于计算出的校正值的测量信号（步骤S105）。

公开(公告)号：US20150125971A1

公开(公告)日：2015-05-07

申请号：US14527714

申请日：2014-10-29

Applicant: EBARA CORPORATION

Inventor： Taro TAKAHASHI ,  Yuta SUZUKI

IPC: H01L21/67 ,  B24B49/10 ,  B24B37/013 ,  H01L21/66 ,  H01L21/306

CPC classification number: B24B49/105 ,  B24B37/005 ,  B24B37/013 ,  B24B37/042 ,  H01L21/12 ,  H01L21/30625 ,  H01L21/67253 ,  H01L22/26

Abstract: A polishing apparatus capable of monitoring an accurate progress of polishing is disclosed. The polishing apparatus includes: a polishing table for supporting a polishing pad; a table motor configured to rotate the polishing table; a top ring configured to press a substrate against the polishing pad to polish the substrate; a dresser configured to dress the polishing pad while oscillating on the polishing pad during polishing of the substrate; a filtering device configured to remove a vibration component, having a frequency corresponding to an oscillation period of the dresser, from an output current signal of the table motor; and a polishing monitoring device configured to monitor a progress of polishing of the substrate based on the output current signal from which the vibration component has been removed.

Abstract translation: 公开了一种能够监测精确抛光进度的抛光装置。 抛光装置包括：用于支撑抛光垫的抛光台; 配置为旋转所述抛光台的工作台马达; 顶环，被配置为将衬底压靠在抛光垫上以抛光衬底; 修整器，其构造成在抛光衬底期间在抛光垫上振荡时修整抛光垫; 滤波装置，被配置为从所述台式马达的输出电流信号中除去具有与所述修整器的振荡周期对应的频率的振动分量; 以及抛光监视装置，被配置为基于已经从其移除了振动分量的输出电流信号来监视基板的抛光进度。

公开(公告)号：US20240342854A1

公开(公告)日：2024-10-17

申请号：US18294730

申请日：2022-07-04

Applicant: EBARA CORPORATION

Inventor： Hiroki NAKAMURA ,  Yuta SUZUKI ,  Yusuke WATANABE ,  Michiaki MATSUDA ,  Koki YAMAMOTO ,  Taro TAKAHASHI

IPC: B24B37/013 ,  B24B49/00 ,  B24B49/04

CPC classification number: B24B37/013 ,  B24B49/003 ,  B24B49/045

Abstract: To accurately detect a polishing end point even if a change in a polishing frictional force is small. A polishing apparatus includes a polishing table for holding a polishing pad, a holder for holding a polishing target object such that the polishing target object faces the polishing pad, and an end point detector that detects, based on a signal indicating a state of polishing of the polishing target object by the polishing pad, a polishing end point indicating an end of the polishing. The end point detector is configured to remove noise of the signal, exponentiate the signal subjected to the noise removal with an exponent greater than 1, and detect the polishing end point based on the exponentiated signal.

公开(公告)号：US20230356350A1

公开(公告)日：2023-11-09

申请号：US18246366

申请日：2021-08-05

Applicant: EBARA CORPORATION

Inventor： Yuta SUZUKI ,  Taro TAKAHASHI ,  Hirofumi OTAKI ,  Tsuneo TORIKOSHI ,  Hiroaki NISHIDA

IPC: B24B37/005 ,  B24B53/017

CPC classification number: B24B37/005 ,  B24B53/017

Abstract: The present invention relates to a technique of determining a time to replace a polishing pad used in a polishing apparatus for polishing a workpiece, such as wafer, substrate, or panel. A polishing apparatus (1) includes: a polishing table (5) configured to support a polishing pad (2); a polishing head (7) configured to press a workpiece (W) against a polishing surface (2a) of the polishing pad (2); a dresser (40) configured to dress the polishing surface (2a) of the polishing pad (2); a detection sensor (60) configured to detect friction between the dresser (40) and the polishing pad (2), the detection sensor (60) being fixed to the dresser (40); and a wear monitoring device (63) configured to determine a wear index value from a plurality of output values of the detection sensor (60) and generate an alarm signal when the wear index value is smaller than a predetermined lower limit.

公开(公告)号：US20190011591A1

公开(公告)日：2019-01-10

申请号：US15740626

申请日：2016-06-23

Applicant: EBARA CORPORATION

Inventor： Taro TAKAHASHI ,  Mitsuo TADA

IPC: G01V3/10 ,  G01R33/038 ,  G01N27/82 ,  G01R33/34

Abstract: The object of the present invention is to provide a small-sized metal detection sensor for detecting fine metal contaminants, using an electromagnetic induction detection technique.A metal detection sensor for 20 detecting metal 14 contained in an object under inspection moving through a passageway 18 comprises: magnets 24, 26 generating static magnetic field; and a coil 30 for detecting a magnetic field 28 generated by the metal 14. The magnets 24, 26 are located outside of the coil 30 along its axial direction, and the coil 30 is located outside of the magnets 24, 26 along the axial direction connecting the N poles and the S poles of the magnets 24, 26. The magnets 24, 26 are opposed to the coil 30.

公开(公告)号：US20180093360A1

公开(公告)日：2018-04-05

申请号：US15714938

申请日：2017-09-25

Applicant: EBARA CORPORATION

Inventor： Hiroyuki SHINOZAKI ,  Yuta SUZUKI ,  Taro TAKAHASHI ,  Seiji KATSUOKA ,  Masahiro HATAKEYAMA

IPC: B24B37/013 ,  B24B37/32 ,  B24B37/10

Abstract: In a scheme in which a top ring is held to an end portion of a swing arm, the present invention improves accuracy of polishing end point detection. A polishing apparatus for polishing between a polishing pad 10 and a semiconductor wafer 16 disposed opposed to the polishing pad 10 includes a polishing table 30A for holding the polishing pad 10 and a top ring 31A for holding the semiconductor wafer 16. A swing shaft motor 14 swings a swing arm 110 for holding the top ring 31A. The arm torque detection section 26 detects arm torque applied to the swing arm 110. An end point detection section 28 detects a polishing end point indicating an end of polishing based on the detected arm torque.

公开(公告)号：US20160074987A1

公开(公告)日：2016-03-17

申请号：US14832618

申请日：2015-08-21

Applicant: Ebara Corporation

Inventor： Taro TAKAHASHI ,  Hidetaka NAKAO ,  Akira NAKAMURA

IPC: B24B37/005 ,  B24B49/00 ,  H01L21/306 ,  H01L21/66 ,  H01L21/67 ,  H01L21/683

CPC classification number: B24B37/005 ,  B24B49/00 ,  H01L22/14 ,  H01L22/20

Abstract: The present invention improves the accuracy of film thickness detection. A film thickness signal processing apparatus 230 is provided with a receiving unit 232 for receiving film thickness data output from an eddy-current sensor 210 for detecting the film thickness of a polishing object 102 along a surface to be polished thereof; an identifying unit 236 for identifying the effective range of the film thickness data on the basis of the film thickness data received by the receiving unit 232; and a correcting unit 238 for correcting the film thickness data within the effective range identified by the identifying unit 236.

Abstract translation: 本发明提高了膜厚检测的精度。 膜厚信号处理装置230设置有接收单元232，用于接收从涡流传感器210输出的膜厚度数据，用于沿着待抛光的表面检测抛光对象102的膜厚度; 识别单元236，用于基于由接收单元232接收的胶片厚度数据来识别胶片厚度数据的有效范围; 以及用于校正由识别单元236识别的有效范围内的膜厚度数据的校正单元238。

公开(公告)号：US20240399536A1

公开(公告)日：2024-12-05

申请号：US18673104

申请日：2024-05-23

Applicant: EBARA CORPORATION

Inventor： Katsuya MINATOZAKI ,  Taro TAKAHASHI

IPC: B24B49/10 ,  B24B37/013 ,  G01N27/90 ,  H01L21/304

Abstract: Provided is an eddy current sensor having an improved sensitivity in a detection coil of the eddy current sensor compared with a conventional one. An eddy current sensor (210) includes a magnetic material, a detection coil (34), a correction coil (166), and an excitation coil. The excitation coil is wound to surround the first pillar and/or the external wall of the magnetic material and generates an eddy current in a conductive film. The detection coil (34) and the correction coil (166) are wound to surround the first pillar and/or the external wall and detects a change in the eddy current generated in the conductive film. An amount of change in an output signal of the correction coil (166) when the eddy current generated in the conductive film changes is less than an amount of change in an output signal of the detection coil (34). One end of the correction coil (166) is directly connected to one end of the detection coil (34), and another end of the correction coil and another end of the detection coil are directly connected to an impedance converter (124) or an amplifier.

公开(公告)号：US20240353344A1

公开(公告)日：2024-10-24

申请号：US18634702

申请日：2024-04-12

Applicant: EBARA CORPORATION

Inventor： Masaki KINOSHITA ,  Keita YAGI ,  Taro TAKAHASHI ,  Yoichi SHIOKAWA ,  Yuki WATANABE

IPC: G01N21/84 ,  G01N21/95 ,  H01L21/304 ,  H01L21/66

CPC classification number: G01N21/8422 ,  G01N21/9501 ,  H01L21/304 ,  H01L22/12

Abstract: Provided is a film thickness measurement device, including: a head that holds a substrate to be polished and is capable of moving the substrate, a stage made of transparent material; a liquid supply unit configured to supply liquid onto the stage; a liquid discharge unit configured to discharge the liquid on the stage to the outside; a measurement unit configured to be placed on a side opposite to the head across the stage and to optically measure a film thickness on a surface of the substrate that is placed across the stage; and a control unit configured to move at least one of the stage and the head toward the other, and to irradiate the substrate with light while the surface of the substrate is immersed in the liquid, thereby performing film thickness measurement.