Method for maskless particle-beam exposure
    11.
    发明授权
    Method for maskless particle-beam exposure 有权
    无掩模粒子束曝光方法

    公开(公告)号:US07777201B2

    公开(公告)日:2010-08-17

    申请号:US12051087

    申请日:2008-03-19

    Abstract: For maskless irradiating a target with a beam of energetic electrically charged particles using a pattern definition means with a plurality of apertures and imaging the apertures in the pattern definition means onto a target which moves (v) relative to the pattern definition means laterally to the axis, the location of the image is moved along with the target, for a pixel exposure period within which a distance of relative movement of the target is covered which is at least a multiple of the width (w) of the aperture images as measured on the target, and after said pixel exposure period the location of the beam image is changed, which change of location generally compensates the overall movement of the location of the beam image.

    Abstract translation: 对于使用具有多个孔的图案定义装置的用能量带电粒子束无目标地照射目标并且将图案定义装置中的孔成像到相对于图案定义装置(v)相对于轴线横向移动(v)的目标, 对于像素曝光期间,图像的位置与目标一起移动,在该像素曝光期间,覆盖目标的相对运动的距离,该距离至少是孔径图像的宽度(w)的倍数, 目标,并且在所述像素曝光周期之后,光束图像的位置改变,位置的变化通常补偿光束图像的位置的整体移动。

    Charged particle beam exposure system and beam manipulating arrangement
    12.
    发明申请
    Charged particle beam exposure system and beam manipulating arrangement 有权
    带电粒子束曝光系统和光束操纵装置

    公开(公告)号:US20090140160A1

    公开(公告)日:2009-06-04

    申请号:US11988922

    申请日:2006-07-20

    CPC classification number: B82Y10/00 B82Y40/00 H01J37/3174 H01J2237/0435

    Abstract: A beam manipulating arrangement for a multi beam application using charged particles comprises a multi-aperture plate having plural apertures traversed by beams of charged particles. A frame portion of the multi-aperture plate is heated to reduce temperature gradients within the multi-aperture plate. Further, a heat emissivity of a surface of the multi-aperture plate may be higher in some regions as compared to other regions in view of also reducing temperature gradients.

    Abstract translation: 用于使用带电粒子的多光束施加的光束操纵装置包括具有由带电粒子束穿过的多个孔的多孔板。 加热多孔板的框架部分以降低多孔板内的温度梯度。 此外,考虑到降低温度梯度,与其他区域相比,多孔板的表面的发热率在一些区域可能更高。

    MULTI-BEAM DEFLECTOR ARRAY DEVICE FOR MASKLESS PARTICLE-BEAM PROCESSING
    13.
    发明申请
    MULTI-BEAM DEFLECTOR ARRAY DEVICE FOR MASKLESS PARTICLE-BEAM PROCESSING 有权
    用于无障碍颗粒光束处理的多光束偏转器阵列装置

    公开(公告)号:US20080203317A1

    公开(公告)日:2008-08-28

    申请号:US12038326

    申请日:2008-02-27

    Abstract: The invention relates to a multi-beam deflector array device for use in a particle-beam exposure apparatus employing a beam of charged particles, the multi-beam deflector array device having a plate-like shape with a membrane region, the membrane region including a first side facing towards the incoming beam of particles, an array of apertures, each aperture allowing passage of a corresponding beamlet formed out of the beam of particles, a plurality of depressions, each depression being associated with at least one aperture, and an array of electrodes, each aperture being associated with at least one electrode and each electrode being located in a depression, the electrodes being configured to realize a non-deflecting state, wherein the particles that pass through the apertures are allowed to travel along a desired path, and a deflecting state, wherein the particles are deflected off the desired path.

    Abstract translation: 本发明涉及一种用于使用带电粒子束的粒子束曝光装置中的多光束偏转器阵列装置,该多光束偏转器阵列装置具有带有膜区域的板状形状,该膜区域包括一个 第一面朝向输入的粒子束,一组孔,每个孔允许通过由粒子束形成的对应子束,多个凹陷,每个凹陷与至少一个孔相关联,以及阵列的 电极,每个孔与至少一个电极相关联,并且每个电极位于凹陷中,电极被配置为实现非偏转状态,其中允许通过孔的颗粒沿着期望的路径行进,并且 偏转状态,其中颗粒偏离所需的路径。

    Particle-optical projection system
    14.
    发明授权
    Particle-optical projection system 有权
    粒子投影系统

    公开(公告)号:US07388217B2

    公开(公告)日:2008-06-17

    申请号:US11700468

    申请日:2007-01-31

    Abstract: In a particle-optical projection system a pattern is imaged onto a target by means of energetic electrically charged particles. The pattern is represented in a patterned beam of said charged particles emerging from the object plane through at least one cross-over; it is imaged into an image with a given size and distortion. To compensate for the Z-deviation of the image position from the actual positioning of the target (Z denotes an axial coordinate substantially parallel to the optical axis), without changing the size of the image, the system includes a position detector for measuring the Z-position of several locations of the target, and a controller for calculating modifications of selected lens parameters of the final particle-optical lens and controlling said lens parameters according to said modifications.

    Abstract translation: 在粒子光学投影系统中,通过能量带电粒子将图案成像到靶上。 所述图案表示在所述带电粒子的图案化束中,所述带电粒子通过至少一个交叉从对象平面出射; 它被成像为具有给定尺寸和失真的图像。 为了补偿图像位置的Z偏差与目标的实际定位(Z表示基本上平行于光轴的轴向坐标),而不改变图像的尺寸,系统包括用于测量Z的位置检测器 - 位置,以及用于计算最终粒子 - 光学透镜的所选透镜参数的修改并根据所述修改来控制所述透镜参数的控制器。

    Advanced pattern definition for particle-beam processing
    15.
    发明申请
    Advanced pattern definition for particle-beam processing 有权
    粒子束加工的高级图案定义

    公开(公告)号:US20050242302A1

    公开(公告)日:2005-11-03

    申请号:US11119025

    申请日:2005-04-29

    Abstract: In a pattern definition device for use in a particle-beam processing apparatus a plurality of apertures (21) are arranged within a pattern definition field (pf) wherein the positions of the apertures (21) in the pattern definition field (pf) taken with respect to a direction (X, Y) perpendicular, or parallel, to the scanning direction are offset to each other by not only multiple integers of the effective width (w) of an aperture taken along said direction, but also multiple integers of an integer fraction of said effective width. The pattern definition field (pf) may be segmented into several domains (D) composed of a many staggered lines (pl) of apertures; along the direction perpendicular to the scanning direction, the apertures of a domain are offset to each other by multiple integers of the effective width (w), whereas the offsets of apertures of different domains are integer fractions of that width.

    Abstract translation: 在用于粒子束处理装置的图案定义装置中,多个孔(21)布置在图案定义区(pf)内,其中,图案定义区(pf)中的孔(21)的位置与 垂直于或平行于扫描方向的方向(X,Y)不仅通过沿着所述方向所取的孔的有效宽度(w)的多个整数而彼此偏移,而且也是整数的多个整数 所述有效宽度的分数。 图案定义字段(pf)可以被分割成由许多交错的线(pl)组成的几个域(D); 沿着与扫描方向垂直的方向,域的孔径相互偏移有效宽度(w)的多个整数,而不同域的孔的偏移量是该宽度的整数分数。

    Ion irradiation of a target at very high and very low kinetic ion energies
    16.
    发明授权
    Ion irradiation of a target at very high and very low kinetic ion energies 有权
    在非常高和非常低的动力学离子能量下对靶进行离子照射

    公开(公告)号:US06909103B2

    公开(公告)日:2005-06-21

    申请号:US10886463

    申请日:2004-07-07

    Abstract: A particle-beam exposure apparatus (1) for irradiating a target (41) by means of a beam (2) of energetic electrically charged particles comprises: an illumination system (101) for generating and forming said particles into a directed beam (21); a pattern definition means (102) located after the illumination system for positioning a pattern of apertures transparent to the particles in the path of the directed beam, thus forming a patterned beam (22) emerging from the pattern definition means through the apertures; and a projection system (103) positioned after the pattern definition means (102) for projecting the patterned beam (22) onto a target (41) positioned after the projection system. The apparatus further comprises an acceleration/deceleration means (32) containing an electric potential gradient which is oriented substantially parallel to the path of the structured beam and constant over at least a cross-section of the beam.

    Abstract translation: 一种用于通过能量带电粒子的光束(2)照射目标物体的粒子束曝光装置(1)包括:用于将所述粒子产生并形成为定向光束(21)的照明系统(101) ; 位于照明系统之后的图案定义装置(102),用于定位在定向光束的路径中对颗粒透明的孔的图案,从而形成从图案定义装置通过孔排出的图案化的束(22); 以及位于图案定义装置(102)之后的投影系统(103),用于将图案化的光束(22)投影到位于投影系统之后的目标(41)上。 该装置还包括加速/减速装置(32),该加速/减速装置(32)包含电位梯度,该电位梯度基本上平行于结构化波束的路径定向并且在至少横截面上恒定。

    Apparatus for enhancing the lifetime of stencil masks
    17.
    发明授权
    Apparatus for enhancing the lifetime of stencil masks 有权
    用于增加模板掩模寿命的装置

    公开(公告)号:US06858118B2

    公开(公告)日:2005-02-22

    申请号:US10395572

    申请日:2003-03-24

    Abstract: An apparatus for masked ion-beam lithography comprises a mask maintenance module for prolongation of the lifetime of the stencil mask. The module comprises a deposition means for depositing material to the side of the mask irradiated by the lithography beam, with at least one deposition source being positioned in front of the mask, and further comprises a sputter means in which at least one sputter source, positioned in front of the mask holder means and outside the path of the lithography beam, produces a sputter ion beam directed to the mask in order to sputter off material from said mask in a scanning procedure and compensate for inhomogeneity of deposition.

    Abstract translation: 用于掩模离子束光刻的装置包括用于延长模板掩模寿命的掩模维护模块。 该模块包括用于将材料沉积到由光刻光束照射的掩模侧面的沉积装置,其中至少一个沉积源位于掩模的前面,并且还包括溅射装置,其中定位至少一个溅射源 在掩模保持器装置的前面并且在光刻光束的路径之外,产生指向掩模的溅射离子束,以便在扫描过程中从所述掩模溅射材料并补偿沉积的不均匀性。

    Ion irradiation of a target at very high and very low kinetic ion energies
    18.
    发明申请
    Ion irradiation of a target at very high and very low kinetic ion energies 有权
    在非常高和非常低的动力学离子能量下对靶进行离子照射

    公开(公告)号:US20050012052A1

    公开(公告)日:2005-01-20

    申请号:US10886463

    申请日:2004-07-07

    Abstract: A particle-beam exposure apparatus (1) for irradiating a target (41) by means of a beam (2) of energetic electrically charged particles comprises: an illumination system (101) for generating and forming said particles into a directed beam (21); a pattern definition means (102) located after the illumination system for positioning a pattern of apertures transparent to the particles in the path of the directed beam, thus forming a patterned beam (22) emerging from the pattern definition means through the apertures; and a projection system (103) positioned after the pattern definition means (102) for projecting the patterned beam (22) onto a target (41) positioned after the projection system. The apparatus further comprises an acceleration/ deceleration means (32) containing an electric potential gradient which is oriented substantially parallel to the path of the structured beam and constant over at least a cross-section of the beam.

    Abstract translation: 一种用于通过能量带电粒子的光束(2)照射目标物体的粒子束曝光装置(1)包括:用于将所述粒子产生并形成为定向光束(21)的照明系统(101) ; 位于照明系统之后的图案定义装置(102),用于定位在定向光束的路径中对颗粒透明的孔的图案,从而形成从图案定义装置通过孔排出的图案化的束(22); 以及位于图案定义装置(102)之后的投影系统(103),用于将图案化的光束(22)投影到位于投影系统之后的目标(41)上。 该装置还包括加速/减速装置(32),该加速/减速装置(32)包含电位梯度,该电位梯度基本上平行于结构化波束的路径定向并且在至少横截面上恒定。

    Maskless particle-beam system for exposing a pattern on a substrate
    19.
    发明授权
    Maskless particle-beam system for exposing a pattern on a substrate 有权
    用于在衬底上露出图案的无掩模粒子束系统

    公开(公告)号:US06768125B2

    公开(公告)日:2004-07-27

    申请号:US10337903

    申请日:2003-01-08

    CPC classification number: B82Y10/00 B82Y40/00 H01J37/045 H01J37/3174

    Abstract: A device (102) for defining a pattern, for use in a particle-beam exposure apparatus (100), said device adapted to be irradiated with a beam (lb,pb) of electrically charged particles and let pass the beam only through a plurality of apertures, comprises an aperture array means (203) and a blanking means (202). The aperture array means (203) has a plurality of apertures (21,230) of identical shape defining the shape of beamlets (bm). The blanking means (202) serves to switch off the passage of selected beamlets; it has a plurality of openings (220), each corresponding to a respective aperture (230) of the aperture array means (203) and being provided with a deflection means (221) controllable to deflect particles radiated through the opening off their path (p1) to an absorbing surface within said exposure apparatus (100). The apertures (21) are arranged on the blanking and aperture array means (202,203) within a pattern definition field (pf) being composed of a plurality of staggered lines (p1) of apertures. Each of the lines (p1) comprises alternately first segments (sf) which are free of apertures and second segments (af) which each comprise a number of apertures spaced apart by a row offset (pm), said row offset being a multiple of the width (w) of apertures, the length (A) of said first segments (sf) being greater than the row offset. In front of the blanking means (202) as seen in the direction of the particle beam, a cover means (201) is provided having a plurality of openings (210), each corresponding to a respective opening (230) of the blanking means and having a width (w1) which is smaller than the width (w2) of the openings (220) of the blanking array means.

    Abstract translation: 一种用于限定用于粒子束曝光设备(100)的图案的设备(102),所述设备适于用带电粒子的光束(lb,pb)照射,并且仅使光束通过多个 的孔径包括孔径阵列装置(203)和消隐装置(202)。 孔径阵列装置(203)具有限定子束(bm)形状的相同形状的多个孔(21,230)。 消隐装置(202)用于切断所选子束的通过; 它具有多个开口(220),每个开口对应于孔阵列装置(203)的相应孔径(230),并且设置有偏转装置(221),该偏转装置可控制,以使通过开口辐射的颗粒偏离其路径(p1 )到所述曝光装置(100)内的吸收表面。 孔(21)布置在由多个交错的孔(p1)组成的图案定义区域(pf)内的消隐和孔径阵列装置(202,203)上。 线(p1)中的每一个交替地包括没有孔的第一段(sf)和第二段(af),每个段包括通过行偏移(pm)间隔开的多个孔,所述行偏移是 孔的宽度(w),所述第一段(sf)的长度(A)大于行偏移。 在沿着该粒子束的方向观察的消隐装置(202)的前面,提供具有多个开口(210)的盖装置(201),每个开口对应于消隐装置的相应开口(230) 具有比消隐阵列装置的开口(220)的宽度(w2)小的宽度(w1)。

    Method for maskless particle-beam exposure
    20.
    发明授权
    Method for maskless particle-beam exposure 有权
    无掩模粒子束曝光方法

    公开(公告)号:US08222621B2

    公开(公告)日:2012-07-17

    申请号:US12619480

    申请日:2009-11-16

    CPC classification number: H01J37/3177 B82Y10/00 B82Y40/00 Y10S430/143

    Abstract: In a maskless particle multibeam processing apparatus, a particle beam is projected through a pattern definition system producing a regular array of beamlets according to a desired pattern, which is projected onto a target which moves at continuous speed along a scanning direction with respect to the pattern definition system. During a sequence of uniformly timed exposure steps the beam image is moved along with the target along the scanning direction, and between exposure steps the location of the beam image is changed with respect to the target. During each exposure step the target covers a distance greater than the mutual distance of neighboring image elements on the target. The location of the beam image at consecutive exposure steps corresponds to a sequence of interlacing placement grids, and after each exposure step the beam image is shifted to a position associated with a different placement grid, with a change of location generally including a component across the scanning direction, thus cycling through the set of placement grids.

    Abstract translation: 在无掩模粒子多波束处理装置中,粒子束通过图案定义系统投射,根据期望的图案产生规则的子束阵列,该期望图案被投影到相对于图案沿扫描方向以连续速度移动的目标 定义系统 在一系列均匀曝光步骤期间,光束图像沿着扫描方向与目标一起移动,并且在曝光步骤之间,光束图像的位置相对于目标改变。 在每个曝光步骤期间,目标覆盖的距离大于目标上相邻图像元素的相互距离。 在连续曝光步骤中的光束图像的位置对应于交错放置网格的序列,并且在每个曝光步骤之后,光束图像被移动到与不同的放置网格相关联的位置,其中位置的变化通常包括横跨 扫描方向,从而循环通过一组放置网格。

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