公开(公告)号：EP4383345A1

公开(公告)日：2024-06-12

申请号：EP23206289.3

申请日：2023-10-27

Applicant: GlobalFoundries U.S. Inc.

Inventor： SHARMA, Santosh ,  ZIERAK, Michael J. ,  BENTLEY, Steven J. ,  LEVY, Mark D.

IPC: H01L29/40 ,  H01L29/778 ,  H01L21/337 ,  H01L29/20 ,  H01L29/417

CPC classification number: H01L29/2003 ,  H01L29/1066 ,  H01L29/7786 ,  H01L29/404 ,  H01L29/41766 ,  H01L29/66462

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a high-electron-mobility transistor (HEMT) and methods of manufacture. The structure includes: a gate structure; a source contact and a drain contact adjacent to the gate structure; and a field plate electrically isolated from the gate structure and abutting the source contact and the drain contact.

公开(公告)号：EP4300541A1

公开(公告)日：2024-01-03

申请号：EP22202064.6

申请日：2022-10-18

Applicant: GlobalFoundries U.S. Inc.

Inventor： LEVY, Mark D. ,  LIU, Qizhi ,  HWANG, Jeonghyun

IPC: H01L21/02 ,  H01L21/265 ,  H01L23/373 ,  H01L29/10

Abstract: A structure comprising a semiconductor substrate; a buried porous semiconductor material; a semiconductor compound material and at least one device on the semiconductor compound material.