-
公开(公告)号:GB863545A
公开(公告)日:1961-03-22
申请号:GB3357057
申请日:1957-10-28
Applicant: HOECHST AG
Inventor: SCHERER OTTO , KUHN HEINRICH , FORCHE EBERHARD
IPC: C07C17/20
Abstract: Aliphatic fluorine compounds are obtained by reacting vaporous hydrogen fluoride with the vapour of a halogenated aliphatic hydrocarbon containing one or more halogen atoms (other than fluorine) and which may additionally contain one or more fluorine atoms, the reaction being carried out in the presence of a catalyst comprising aluminium fluoride and at a temperature in the range of 200 DEG -300 DEG C. In an example, a nickel tube is filled with pieces of porous alumina impregnated with magnesium chloride; and a current of gaseous hydrogen fluoride is passed through the tube for 20 hours at 200 DEG -250 DEG C. A mixture of the vapours of carbon tetrachloride (1 mol per hour) and hydrogen fluoride (1.86 mols per hour) is then passed through the tube at 230 DEG -250 DEG C. The reaction product consisted of difluorodichloromethane and monofluorotrichloromethane, together with a minor proportion of trifluoromonoschloromethane. Specification 805,503 also is referred to.
-
公开(公告)号:AU1316395A
公开(公告)日:1995-07-17
申请号:AU1316395
申请日:1994-12-19
Applicant: HOECHST AG
Inventor: KUHN HEINRICH , JACULI DIETER , PLIEFKE ENGELBERT , BOS ULRICH , FRASS WERNER
IPC: B41C1/10 , B41N1/00 , B41N1/08 , B41N1/14 , B41N3/03 , B41N3/04 , C08J7/00 , C23C4/02 , C23C4/06 , C23C4/10 , C23C4/14
Abstract: PCT No. PCT/EP94/04218 Sec. 371 Date Sep. 20, 1996 Sec. 102(e) Date Sep. 20, 1996 PCT Filed Dec. 19, 1994 PCT Pub. No. WO95/18019 PCT Pub. Date Jul. 6, 1995This invention relates to a process for preparing printing plates which are used in offset printing. The process produces a plate which comprises a substrate film in which a thin durable hydrophilic layer has been applied thereto. In the process, the substrate film is first microroughened by pressure blasting so that the surface roughness, RA, is in the range 0.3 to 1.5 mu m. Subsequently, a durable, firmly adhering hydrophilic layer is applied to substrate by plasma-spraying an oxide powder with a particle size of 1 to 40 mu m onto the substrate. This process produces a plate whose surface is not greasy or grainy.
-
公开(公告)号:NO943647L
公开(公告)日:1994-09-30
申请号:NO943647
申请日:1994-09-30
Applicant: HOECHST AG
Inventor: KUHN HEINRICH , BOS ULRICH , HANNSS CARSTEN , KAYSER KARL-FRIEDRICH VON
Abstract: PCT No. PCT/EP93/00675 Sec. 371 Date Sep. 30, 1994 Sec. 102(e) Date Sep. 30, 1994 PCT Filed Mar. 19, 1993 PCT Pub. No. WO93/20255 PCT Pub. Date Oct. 14, 1993The invention relates to a process for producing a strong bond between copper layers, which have been applied by means of thermal spraying of pulverulent copper or copper alloys, and ceramic. Fine copper powder having a mean particle diameter of
-
公开(公告)号:CA1049048A
公开(公告)日:1979-02-20
申请号:CA206865
申请日:1974-08-09
Applicant: HOECHST AG
Inventor: KUHN HEINRICH , KLUGE FRIEDHELM , SIEGEMUND GUNTER
Abstract: PROCESS FOR THE PREPARATION OF 1-CHLORO-2,2,2-TRIFLUORO- ETHYLDIFLUOROMETHYL ETHER of the disclosure: Process for the preparation of 1-chloro-2,2,2-trifluoro-ethyl-difluoromethyl ether by reacting 1-chloro-2,2,2-tri-fluoroethyl-methyl ether with elementary chlorine and fluorinating the resulting 1-chloro-2,2,2-trifluoroethyl-dichloro-methyl ether.
-
公开(公告)号:CA692039A
公开(公告)日:1964-08-04
申请号:CA692039D
Applicant: HOECHST AG
Inventor: SCHERER OTTO , HAHN HELMUT , KUHN HEINRICH
-
公开(公告)号:GB949877A
公开(公告)日:1964-02-19
申请号:GB4290061
申请日:1961-11-30
Applicant: HOECHST AG
Inventor: SCHERER OTTO , KUHN HEINRICH , HORLEIN GERHARD , GRAFEN KARLHEINZ
Abstract: Trifluorobromomethane is produced in a continuous process wherein chloroform is fluorinated with an excess of gaseous hydrogen fluoride and the trifluoromethane so formed is brominated, after the removal of hydrogen chloride and hydrogen fluoride therefrom, using an excess of bromine in a reaction vessel the walls of which have an inner surface consisting of a sintered oxide of a metal of Group II to IV of the Periodic Table. It is of advantage to use up to a 50% mole excess of hydrogen fluoride and of bromine with a fluorination temperature of at least 300 DEG C., preferably 420 DEG to 500 DEG C. and a bromination temperature of 650 DEG to 800 DEG C., preferably 700 DEG to 750 DEG C.Suitable oxides mentioned are aluminium, zirconium and magnesium oxides. An aluminium fluoride catalyst may be used in the fluorination process. Specification 770,640 is referred to.ALSO:Trifluoromethane is brominated in a reaction zone bounded by walls of which the inner surfaces consist of a sintered oxide of a metal of Group II to IV of the Periodic Table. The reaction zone may take the form of tubes, provided with external heating means, made from the sintered oxide, preferably aluminium oxide, and being connected together by metal couplings which are not heated and which consist of special steels or alloys thereof, or preferably consist of nickel. Other oxides mentioned are zirconium and magnesium oxides. Specification 770,640 is referred to.
-
-
-
-
-